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1N3030BUR-1

产品描述Zener Diode, 27V V(Z), 5%, 1W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLASS, LL41, MELF-2
产品类别分立半导体    二极管   
文件大小23KB,共2页
制造商Compensated Devices Inc
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1N3030BUR-1概述

Zener Diode, 27V V(Z), 5%, 1W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLASS, LL41, MELF-2

1N3030BUR-1规格参数

参数名称属性值
厂商名称Compensated Devices Inc
包装说明O-LELF-R2
Reach Compliance Codeunknown
其他特性METALLURGICALLY BONDED
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JEDEC-95代码DO-213AB
JESD-30 代码O-LELF-R2
JESD-609代码e0
膝阻抗最大值750 Ω
元件数量1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
极性UNIDIRECTIONAL
最大功率耗散1 W
认证状态Not Qualified
标称参考电压27 V
最大反向电流0.5 µA
表面贴装YES
技术ZENER
端子面层TIN LEAD
端子形式WRAP AROUND
端子位置END
最大电压容差5%
工作测试电流9.5 mA

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• 1N3016BUR-1 thru 1N3045BUR-1 AVAILABLE IN
JAN, JANTX AND JANTXV
PER MIL-PRF-19500/115
• 1 WATT ZENER DIODES
• LEADLESS PACKAGE FOR SURFACE MOUNT
• DOUBLE PLUG CONSTRUCTION
• METALLURGICALLY BONDED
1N3016BUR-1
thru
1N3045BUR-1
and
CDLL3016B
thru
CDLL3045B
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
DC Power Dissipation: 1watt @ TEC = +125°C
Power Derating: 20 mW / °C above TEC = +125°C
Forward Voltage @ 200mA: 1.2 volts maximum
ELECTRICAL CHARACTERISTICS @ 25°C
CDI
TYPE
NUMBER
(NOTE 1)
NOMINAL
ZENER
VOLTAGE
1
VZ
@ ZT
(NOTE 2)
VOLTS
CDLL3016B
CDLL3017B
CDLL3018B
CDLL3019B
CDLL3020B
CDLL3021B
CDLL3022B
CDLL3023B
CDLL3024B
CDLL3025B
CDLL3026B
CDLL3027B
CDLL3028B
CDLL3029B
CDLL3030B
CDLL3031B
CDLL3032B
CDLL3033B
CDLL3034B
CDLL3035B
CDLL3036B
CDLL3037B
CDLL3038B
CDLL3039B
CDLL3040B
CDLL3041B
CDLL3042B
CDLL3043B
CDLL3044B
CDLL3045B
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
ZENER
TEST
CURRENT
1ZT
MAXIMUM ZENER IMPEDANCE
(NOTE 3)
ZZT @ 1ZT
mA
37
34
31
28
25
23
21
19
17
15.5
14
12.5
11.5
10.5
9.5
8.5
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.7
3.3
3.0
2.8
2.5
2.3
OHMS
3.5
4.0
4.5
5
7
8
9
10
14
16
20
22
23
25
35
40
45
50
60
70
80
95
110
125
150
175
200
250
350
450
ZZK @ 1ZK
OHMS
700
700
700
700
700
700
700
700
700
700
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
3000
3000
4000
mA
1.0
.5
.5
.5
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
mA
140
125
115
105
95
85
80
74
63
60
52
47
43
40
34
31
28
26
23
21
19
18
17
15
14
12
11
10
9.0
8.3
MAX. DC
ZENER
CURRENT
1ZM
MAX. REVERSE
LEAKAGE CURRENT
l @V
R
R
µ
A
5.0
5.0
5.0
5.0
5.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
VOLTS
5.2
5.7
6.2
6.9
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
76.0
83.6
DIM
D
F
G
G1
S
MILLIMETERS
MIN MAX
2.39
2.66
0.41
0.55
4.80
5.20
4.11 REF.
0.03 MIN.
INCHES
MIN MAX
.094 .105
.016 .022
.189 .205
.159 REF.
.001 MIN.
FIGURE 1
DESIGN DATA
CASE:
DO-213AB, Hermetically sealed
glass case. (MELF, LL41)
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC): 50
˚C/W maximum at L = 0 inch
THERMAL IMPEDANCE: (Z
OJX): 15
˚C/W maximum
POLARITY:
Diode to be operated with the
banded (cathode) end positive with
respect to the opposite end.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion (COE)
Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
NOTE 1
NOTE 2
NOTE 3
No suffix signifies + 20%. “A” Suffix signifies + 10%, “B” Suffix signifies + 5%. "C" suffix
signifies + 2% and "B" suffix signifies + 1%.
Zener voltage is measured with the device junction in thermal equilibrium at an ambient
temperature of 25°C +3°C.
Zener impedance is derived by superimposing on 1ZT A 60Hz rms a.c. current equal
to 10% of 1ZT
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com

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