SSM3J307T
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV)
SSM3J307T
○
Power Management Switch Applications
○
High-Speed Switching Applications
•
•
1.5 V drive
Low ON-resistance: R
on
= 83 mΩ (max) (@V
GS
= -1.5 V)
R
on
= 56 mΩ (max) (@V
GS
= -1.8 V)
R
on
= 40 mΩ (max) (@V
GS
= -2.5 V)
R
on
= 31 mΩ (max) (@V
GS
= -4.5 V)
+0.2
2.8-0.3
+0.2
1.6-0.1
0.4±0.1
３
0.15
Unit: mm
2.9±0.2
0.95
1.9±0.2
１
２
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
(Note 1)
I
DP
(Note 1)
P
D
(Note 2)
t = 10 s
T
ch
T
stg
Rating
-20
±8
-5.0
-10
700
1250
150
−55
to 150
Unit
V
A
mW
°C
°C
V
0.95
0.7±0.05
1: Gate
TSM
2: Source
3: Drain
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-3S1A
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Weight: 10 mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor
Reliability Handbook
(“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Note 1: The junction temperature should not exceed 150°C during use.
Note 2: Mounted on an FR4 board. (25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 645 mm
2
)
Marking
3
Equivalent Circuit
(top view)
3
KDP
1
2
1
2
1
2008-10-28
0½0.1
0.16±0.05
SSM3J307T
Electrical Characteristics
(Ta = 25°C)
Characteristic
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Symbol
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
⏐Y
fs
⏐
Test Conditions
I
D
=
-1 mA, V
GS
=
0 V
I
D
=
-1 mA, V
GS
= +8
V
V
DS
=
-20V, V
GS
=
0 V
V
GS
= ±8
V, V
DS
=
0 V
V
DS
=
-3 V, I
D
=
-1 mA
V
DS
=
-3 V, I
D
=
-4.0 A
I
D
=
-4.0 A, V
GS
=
-4.5 V
Drain–source ON-resistance
R
DS (ON)
I
D
=
-4.0 A, V
GS
=
-2.5 V
I
D
=
-1.5 A, V
GS
=
-1.8 V
I
D
=
-0.75 A, V
GS
=
-1.5 V
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
on
t
off
V
DSF
V
DS
=
−10
V, I
D
=
−5.0
A
V
GS
=
−4.5
V
V
DD
=
-10 V, I
D
=
-2.0 A,
V
GS
=
0 to -2.5 V, R
G
=
4.7
Ω
I
D
=
5.0 A, V
GS
=
0 V
(Note 3)
V
DS
=
-10 V, V
GS
=
0 V, f
=
1 MHz
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
Min
-20
-12
⎯
⎯
-0.3
9.8
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
25
31
38
46
1170
250
200
19
14.2
4.8
35
160
0.83
Max
⎯
⎯
-10
±1
-1.0
⎯
31
40
56
83
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.2
ns
V
nC
pF
mΩ
Unit
V
μA
μA
V
S
Drain-Source forward voltage
Note 3: Pulse test
Switching Time Test Circuit
(a) Test Circuit
OUT
IN
−2.5
V
R
G
R
L
V
DD
90%
(b) V
IN
0V
10%
0
−
2.5V
10
μs
(c) V
OUT
V
DS (ON)
90%
10%
t
r
t
on
t
off
t
f
V
DD
= −
10 V
R
G
=
4.7
Ω
D.U.
≤
1%
V
IN
: t
r
, t
f
<
5 ns
Common Source
Ta
=
25°C
V
DD
Usage Considerations
Let V
th
be the voltage applied between gate and source that causes the drain current (I
D
) to below
−1
mA for the
SSM3J307T. Then, for normal switching operation, V
GS(on)
must be higher than V
th,
and V
GS(off)
must be lower than V
th.
This relationship can be expressed as: V
GS(off)
< V
th
< V
GS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
2
2008-10-28
SSM3J307T
I
D
– V
DS
-10
-8V
-2.5V
-1.8 V
-4.5V
-3.0V
-1.5 V
-10
Common Source
VDS
=
-3 V
I
D
– V
GS
(A)
(A)
-8.0
-1
Ta
=
100 °C
-0.1
25 °C
-0.01
−
25 °C
I
D
-6.0
Drain current
-4.0
VGS=-1.2 V
-2.0
Common Source
Ta
=
25 °C
0
-0.2
-0.4
-0.6
-0.8
-1
Drain current
I
D
-0.001
0
-0.0001
0
-1.0
-2.0
Drain–source voltage
V
DS
(V)
Gate–source voltage
V
GS
(V)
R
DS (ON)
– V
GS
150
ID
=-4.0A
Common Source
150
Common Source
Ta
=
25°C
R
DS (ON)
– I
D
Drain–source ON-resistance
R
DS (ON)
(mΩ)
Drain–source ON-resistance
R
DS (ON)
(mΩ)
Ta
=
25°C
100
100
-1.2 V
50 -1.5 V
-1.8V
-2.5 V
VGS = -4.5 V
0
50
25 °C
Ta
=
100 °C
−
25 °C
0
0
-2
-4
-6
-8
0
-2.0
-4.0
-6.0
-8.0
-10
Gate–source voltage
V
GS
(V)
Drain current
I
D
(A)
R
DS (ON)
– Ta
150
-1.0
V
th
– Ta
V
th
(V)
Common Source
VDS
=
-3 V
ID
=
-1 mA
Common Source
Drain–source ON-resistance
R
DS (ON)
(mΩ)
-1.5 A / -1.8V
-4.0 A / -2.5 V
50
-0.75 A / -1.5 V
Gate threshold voltage
100
-0.5
ID
=
-4.0 A / VGS
=
-4.5 V
0
−50
0
50
100
150
0
−50
0
50
100
150
Ambient temperature
Ta
(°C)
Ambient temperature
Ta
(°C)
3
2008-10-28
SSM3J307T
(S)
100
Common Source
VDS
=
-3 V
Ta
=
25°C
|Y
fs
| – I
D
(A)
I
DR
– V
DS
10
Common Source
VGS
=
0 V
D
1
G
I
DR
⎪Y
fs
⎪
30
Forward transfer admittance
10
Drain reverse current
I
DR
S
0.1
Ta =100 °C
25 °C
0.01
−25
°C
3
1
0.3
0.1
-0.01
-0.1
-1
-10
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
Drain current
I
D
(A)
Drain–source voltage
V
DS
(V)
10000
5000
C – V
DS
10000
t – I
D
toff
tf
Common Source
VDD
=
-10 V
VGS
=
0 to -2.5 V
Ta
=
25 °C
RG
=
4.7Ω
(pF)
3000
1000
1000
500
300
Coss
Crss
Common Source
Ta
=
25°C
f
=
1 MHz
VGS
=
0 V
-1
-10
-100
Ciss
Capacitance
t
Switching time
100
(ns)
C
100
50
30
ton
10
tr
10
-0.1
1
-0.001
-0.01
-0.1
-1
-10
Drain–source voltage
V
DS
(V)
Drain current
I
D
(A)
Dynamic Input Characteristic
-8
(V)
Common Source
ID
=
-5.0 A
Ta
=
25°C
-6
Gate–source voltage
V
GS
-4
VDD = - 10 V
VDD = - 16 V
-2
0
0
10
20
30
40
Total Gate Charge
Qg
(nC)
4
2008-10-28
SSM3J307T
R
th
– t
w
1000
1000
P
D
– T
a
Drain power dissipation P
D
(mW)
a: Mounted on FR4 Board
(25.4 mm × 25.4 mm × 1.6 mm ,
2
Cu Pad : 645 mm )
b: Mounted on FR4 Board
(25.4 mm × 25.4
2
mm × 1.6 mm ,
Cu Pad: 0.8 mm ×3)
Transient thermal impedance R
th
(°C/W)
b
800
a
100
a
600
400
b
10
a: Mounted on FR4 Board
(25.4 mm × 25.4 mm × 1.6 mm ,
Cu Pad : 645 mm
2
)
b: Mounted on FR4 Board
(25.4 mm × 25.4
2
mm × 1.6 mm ,
Cu Pad: 0.8 mm ×3)
0.01
0.1
1
10
100
1000
200
1
0.001
0
-40
-20
0
20
40
60
80
100 120
140 160
Pulse width
t
w
(s)
Ambient temperature
Ta
(°C)
5
2008-10-28
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