SSM3J130TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J130TU
○
Power Management Switch Applications
•
•
1.5 V drive
Low ON-resistance:R
DS(ON)
= 63.2 mΩ (max) (@V
GS
= -1.5 V)
R
DS(ON)
= 41.1 mΩ (max) (@V
GS
= -1.8 V)
R
DS(ON)
= 31.0 mΩ (max) (@V
GS
= -2.5 V)
R
DS(ON)
= 25.8 mΩ (max) (@V
GS
= -4.5 V)
0.65±0.05
2.0±0.1
1
2
3
0.166±0.05
1: Gate
2: Source
3: Drain
Unit: mm
2.1±0.1
1.7±0.1
+0.1
0.3 -0.05
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
(Note 1)
P
D
(Note 2)
T
ch
T
stg
Rating
-20
±
8
-4.4
-8.8
800
500
150
-55 to 150
Unit
V
V
Drain power dissipation
Channel temperature
Storage temperature range
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on a ceramic board.
(25.4 mm
×
25.4 mm
×
0.8 mm, Cu Pad: 645 mm
2
)
Note 2: Mounted on an FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 645 mm
2
)
UFM
JEDEC
JEITA
TOSHIBA
0.7±0.05
A
―
―
2-2U1A
Weight: 6.6 mg (typ.)
Marking
3
Equivalent Circuit
(top view)
3
JJC
1
2
1
2
1
2009-05-11
SSM3J130TU
Electrical Characteristics
(Ta = 25°C)
Characteristic
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Symbol
Test Conditions
Min
-20
(Note 4)
-15
⎯
⎯
-0.3
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
8.8
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
(Note 3)
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
17.5
20.9
24.2
28.8
32.4
1800
205
190
25
133
24.8
18.0
6.8
0.83
Max
⎯
⎯
-1
±1
-1.0
⎯
25.8
31.0
41.1
63.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.2
V
nC
ns
pF
mΩ
Unit
V
μA
μA
V
S
V
(BR) DSS
I
D
= -1 mA, V
GS
= 0 V
V
(BR) DSX
I
D
= -1 mA, V
GS
= 5 V
I
DSS
I
GSS
V
th
⏐Y
fs
⏐
V
DS
= -20 V, V
GS
= 0 V
V
GS
=
±8
V, V
DS
= 0 V
V
DS
= -3 V, I
D
= -1 mA
V
DS
= -3 V, I
D
= -2.0 A
I
D
= -4.0 A, V
GS
= -4.5 V
Drain–source ON-resistance
R
DS (ON)
I
D
= -4.0 A, V
GS
= -2.5 V
I
D
= -2.5 A, V
GS
= -1.8 V
I
D
= -1.5 A, V
GS
= -1.5 V
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source forward voltage
Turn-on time
Turn-off time
C
iss
C
oss
C
rss
t
on
t
off
Q
g
Q
gs
Q
gd
V
DSF
V
DS
= -10 V, V
GS
= 0 V
f = 1 MHz
V
DD
= -10 V, I
D
= -1.5 A
V
GS
= 0 to -2.5 V, R
G
= 4.7
Ω
V
DS
= -10 V, I
DS
= - 4.4 A,
V
GS
=- 4.5 V
I
D
= 4.4 A, V
GS
= 0 V
Note3: Pulse test
Note4: V
DSX
mode (the application of a plus voltage between gate and source) may cause decrease in maximum
rating of drain-source voltage.
Switching Time Test Circuit
(a) Test Circuit
OUT
IN
-2.5 V
R
G
-2.5V
10
μs
V
DD
= -10 V
R
G
= 4.7
Ω
D.U.
<
1%
=
V
IN
: t
r
, t
f
< 5 ns
Common Source
Ta = 25°C
R
L
V
DD
90%
(b) V
IN
0V
10%
0
(c) V
OUT
V
DS (ON)
90%
10%
t
r
t
on
t
off
t
f
V
DD
Usage Considerations
Let V
th
be the voltage applied between gate and source that causes the drain current (I
D
) to below
−1
mA for the
SSM3J130TU. Then, for normal switching operation, V
GS(on)
must be higher than V
th,
and V
GS(off)
must be lower than
V
th.
This relationship can be expressed as: V
GS(off)
< V
th
< V
GS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
2
2009-05-11
SSM3J130TU
I
D
– V
DS
-10
-8V
-1.8 V
-1.5 V
-4.5V
-2.5V
VGS = -1.2 V
-10
Common Source
VDS = -3 V
I
D
– V
GS
(A)
I
D
-6.0
I
D
(A)
-8.0
-1
Drain current
-0.1
Ta = 100 °C
-25 °C
-0.01
25 °C
-4.0
-2.0
Common Source
Ta = 25 °C
0
-0.2
-0.4
-0.6
-0.8
-1
Drain current
-0.001
0
-0.0001
0
-0.5
-1.0
-1.5
Drain–source voltage
V
DS
(V)
Gate–source voltage
V
GS
(V)
R
DS (ON)
– V
GS
100
ID =-4.0A
Common Source
Ta = 25°C
100
Common Source
Ta = 25°C
R
DS (ON)
– I
D
Drain–source ON-resistance
R
DS (ON)
(mΩ)
50
25 °C
Ta = 100 °C
Drain–source ON-resistance
R
DS (ON)
(mΩ)
50
-1.5 V
-2.5 V
-1.8V
-25 °C
0
VGS = -4.5 V
0
-2
-4
-6
-8
0
0
-2.0
-4.0
-6.0
-8.0
-10
Gate–source voltage
V
GS
(V)
Drain current
I
D
(A)
R
DS (ON)
– Ta
100
Common Source
-1.0
V
th
– Ta
V
th
(V)
Common Source
VDS = -3 V
ID = -1 mA
Drain–source ON-resistance
R
DS (ON)
(mΩ)
50
-2.5 A / -1.8V
-4.0 A / -2.5 V
-1.5 A / -1.5 V
Gate threshold voltage
-0.5
ID = -4.0 A / VGS = -4.5 V
0
−50
0
50
100
150
0
−50
0
50
100
150
Ambient temperature
Ta
(°C)
Ambient temperature
Ta
(°C)
3
2009-05-11
SSM3J130TU
(S)
100
|Y
fs
| – I
D
(A)
Common Source
VDS
=
-3 V
Ta
=
25°C
I
DR
– V
DS
10
Common Source
VGS = 0 V
D
1
G
I
DR
⎪Y
fs
⎪
30
Forward transfer admittance
10
Drain reverse current
I
DR
S
0.1
Ta =100 °C
25 °C
0.01
-25 °C
0.001
0
3
1
0.3
0.1
-0.01
-0.1
-1
-10
0.2
0.4
0.6
0.8
1.0
1.2
Drain current
I
D
(A)
Drain–source voltage
V
DS
(V)
10000
5000
C – V
DS
10000
toff
tf
Ciss
1000
t – I
D
Common Source
VDD = -10 V
VGS = 0 to -2.5 V
Ta = 25 °C
RG = 4.7Ω
(pF)
3000
1000
500
300
Coss
Crss
Capacitance
t
Switching time
100
100
50
30
Common Source
Ta
=
25°C
f
=
1 MHz
VGS
=
0 V
-1
-10
(ns)
C
ton
10
tr
10
-0.1
-100
1
-0.001
-0.01
-0.1
-1
-10
Drain–source voltage
V
DS
(V)
Drain current
I
D
(A)
Dynamic Input Characteristic
-8
Common Source
ID = -4.4 A
Ta = 25°C
V
GS
Gate–source voltage
(V)
-6
-4
VDD = - 10 V
VDD = - 16 V
-2
0
0
10
20
30
40
50
Total Gate Charge
Qg
(nC)
4
2009-05-11
SSM3J130TU
–
t
w
1000
c
b
100
a
r
th
600
P
D
– T
a
a: Mounted on ceramic board
(25.4mm
×
25.4mm
×
0.8mm , Cu Pad : 645 mm
2
)
b: Mounted on FR4 board
(25.4mm
×
25.4mm
×
1.6mm , Cu Pad : 645 mm
2
)
Transient thermal impedance Rth (°C/W)
Drain power dissipation P
D
(mW)
800
a
600
b
400
10
Single pulse
a: Mounted on ceramic board
(25.4mm
×
25.4mm
×
0.8mm , Cu Pad : 645 mm
2
)
b: Mounted on FR4 board
(25.4mm
×
25.4mm
×
1.6mm , Cu Pad : 645 mm
2
)
c: Mounted on FR4 Board
(25.4mm
×
25.4mm
×
1.6mm , Cu Pad : 0.36 mm
2
×3)
200
1
0.001
0.01
0.1
1
10
100
600
0
-40
-20
0
20
40
60
80
100
120 140
160
Pulse Width
t
w
(s)
Ambient temperature
Ta
(°C)
5
2009-05-11
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