ZOWIE
SSCD102SH THRU SSCD110SH
FEATURES
*
*
*
*
*
*
*
Halogen-free type
Lead free product , compliance to RoHs
Lead less chip form , no lead damage
Lead-free solder joint , no wire bond & lead frame
Low power loss , High efficiency
High current capability , low VF
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Schottky Barrier Diode
(20V~100V / 1.0A)
OUTLINE DIMENSIONS
Case : 1206-S
1.60 ± 0.1
Unit : mm
3.40 ± 0.1
0.05
R0.
40
1.50
Typ.
APPLICATION
*
*
*
*
*
Switching mode power supply applications
Portable equipment battery applications
General rectification
DC / DC Converter
Telecommunication
0.70 ± 0.2
0.70 ± 0.2
Equivalent : SOD-123
MECHANICAL DATA
Case :
Packed with FRP substrate and epoxy underfilled
Terminals :
Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity :
Laser Cathode band marking
Weight :
0.012 gram
MARKING
Cathode mark
Voltage class
Small Package
A S
.
Amps class
Halogen-free type
PACKING
*
3,000 pieces per 7" (178mm ± 2mm) reel
*
4 reels per box
*
6 boxes per carton
SSCD102
Absolute Maximum Ratings (Ta = 25 C)
SSCD
o
ITEM
Repetitive peak reverse voltage
Average forward current
Peak forward surge current
Operating junction temperature Range
Storage temperature Range
Symbol
V
RRM
I
F(AV)
I
FSM
T
j
T
STG
o
Conditions
0.93 ± 0.05
102SH
20
104SH
40
1.0
106SH
60
110SH
100
Unit
V
A
A
8.3ms single half sine-wave
-55 to +125
20
-55 to +150
-55 to +150
o
o
C
C
Electrical characteristics (Ta = 25 C)
ITEM
Symbol
Conditions
I
F
= 0.1A
I
F
= 0.5A
I
F
= 1.0A
Forward voltage (NOTE 1)
V
F
I
F
= 0.1A
I
F
= 0.5A
I
F
= 1.0A
I
F
= 0.1A
I
F
= 0.5A
I
F
= 1.0A
Repetitive peak reverse current (NOTE 1)
Junction capacitance
Thermal resistance
I
RRM
C
j
R
th(JA)
R
th(JL)
NOTES : (1) Pulse test width PW=300usec , 1% duty cycle.
(2) Mounted on P.C. board with 0.2 x 0.2"(5.0 x5.0mm) copper pad areas.
Type
SSCD102SH
/
SSCD104SH
SSCD106SH
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.32
0.40
0.46
0.35
0.48
0.62
0.45
0.66
0.76
0.015
110
88
28
Max.
-
-
0.50
-
-
0.70
-
-
0.85
0.2
-
-
-
Unit
V
V
SSCD110SH
V
V
R
= Max. V
RRM
, Ta = 25
o
C
V
R
= 4V, f = 1.0 MHz
Junction to ambient (NOTE 2)
Junction to lead (NOTE 2)
mA
pF
o
o
C/W
C/W
REV.
1
2007/12
ZOWIE
SSCD102SH THRU SSCD110SH
(20V~100V / 1.0A)
FIG.1 - FORWARD CURRENT DERATING CURVE
1.0
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED ON
0.2 X 0.2"(5.0X5.0mm)
COPPER PAD AREAS
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
25
8.3ms Single Half Sine-Wave
(JEDEC Method)
20
SSCD106SH & 110SH
15
0.5
SSCD102SH & 104SH
10
5
0
0
50
70
90
110
130
o
0
150
170
1
10
NUMBER OF CYCLES AT 60Hz
100
LEAD TEMPERATURE, C
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
IINSTANTANEOUS FORWARD CURRENT, (A)
INSTANTANEOUS REVERSE CURRENT,
MILLIAMPERES
10
1.00
T
J
=100 C
1.0
o
SSCD106SH
0.10
SSCD110SH
0.10
SSCD102SH~104SH
0.01
0.01
T
J
=25 C
o
Ta=25 C
o
0.001
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
FORWARD VOLTAGE, (V)
.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
400
JUNCTION CAPACITANCE, pF
T
J
= 25 C
f=1.0MHz
Vsig=50mVP-P
o
100
10
0
1.0
10
100
REVERSE VOLTAGE, VOLTS
REV. 1
2007/12
微控制器 MCU
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