MUR140GP,MUR140GP pdf中文资料,MUR140GP引脚图,MUR140GP电路-Datasheet-电子工程世界

Datasheet> 器件分类 > 半导体> 分立半导体> MUR140GP

文档预览

MUR140GP: 产品描述1 A, 400 V, SILICON, SIGNAL DIODE, DO-41; 产品类别半导体分立半导体; 文件大小51KB，共3页; 制造商上海商朗电子

下载文档选型对比全文预览

MUR140GP概述

1 A, 400 V, SILICON, SIGNAL DIODE, DO-41

文档预览

下载PDF文档

全文
预览

Shanghai Lunsure Electronic

Technology Co.,Ltd

Tel:0086-21-37185008

Fax:0086-21-57152769

MUR105GP

THRU

MUR160GP

1.0 Amp Glass

Passivated Super Fast

Recovery Rectifier

50 to 600 Volts

DO-41

Features

•

High Surge Capability

Low Forward Voltage Drop

High Current Capability

Super Fast Switching Speed For High Efficiency

Maximum Ratings

•

Operating Temperature: -65°C to +150°C

Storage Temperature: -65°C to +150°C

Maximum

Recurrent

Peak Reverse

Voltage

50V

100V

150V

200V

400V

600V

Maximum

RMS Voltage

35V

70V

105V

140V

280V

420V

Maximum DC

Blocking

Voltage

50V

100V

150V

200V

400V

600V

Part Number

MUR105GP

MUR110GP

MUR115GP

MUR120GP

MUR140GP

MUR160GP

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

F(AV)

1.0A

= 55°C

Current

Peak Forward Surge

FSM

25A

8.3ms, half sine

Current

Maximum

Instantaneous

Forward Voltage

= 1.0A;

MUR105GP-115GP

.97V

1.35V T

= 25°C

MUR120GP-160GP

Maximum DC

5.0µA T

= 25°C

Reverse Current At

Rated DC Blocking

= 150°C

50µA

Voltage

Maximum Reverse

Recovery Time

MUR105GP-140GP

45ns

=0.5A, I

=1.0A,

=0.25A

60ns

MUR160GP

Typical Junction

Capacitance

MUR105GP-115GP

15pF

Measured at

10pF

1.0MHz, V

=4.0V

MUR120GP-160GP

*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%

Cathode

Mark

DIMENSIONS

INCHES

DIM

MIN

.166

.080

.028

1.000

MAX

.205

.107

.034

---

MIN

4.10

2.00

.70

25.40

MAX

5.20

2.70

.90

---

NOTE

www.cnelectr.com

MUR140GP相似产品对比

	MUR140GP	MUR105GP	MUR110GP	MUR115GP	MUR120GP	MUR160GP
描述	1 A, 400 V, SILICON, SIGNAL DIODE, DO-41	1 A, 50 V, SILICON, SIGNAL DIODE, DO-41	1 A, 100 V, SILICON, SIGNAL DIODE, DO-41	1 A, 150 V, SILICON, SIGNAL DIODE, DO-41	1 A, 200 V, SILICON, SIGNAL DIODE, DO-41	1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
端子数量	-	-	2	2	2	2
元件数量	-	-	1	1	1	1
加工封装描述	-	-	DO-41, 2 PIN	DO-41, 2 PIN	DO-41, 2 PIN	DO-41, 2 PIN
状态	-	-	DISCONTINUED	DISCONTINUED	DISCONTINUED	DISCONTINUED
包装形状	-	-	圆	ROUND	圆	圆
包装尺寸	-	-	LONG FORM	LONG FORM	LONG FORM	LONG FORM
端子形式	-	-	线	WIRE	线	线
端子涂层	-	-	锡铅	TIN LEAD	锡铅	锡铅
端子位置	-	-	AXIAL	AXIAL	AXIAL	AXIAL
包装材料	-	-	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
结构	-	-	单一的	SINGLE	单一的	单一的
壳体连接	-	-	隔离	ISOLATED	隔离	隔离
二极管元件材料	-	-	硅	SILICON	硅	硅
二极管类型	-	-	信号二极管	SIGNAL DIODE	信号二极管	信号二极管
反向恢复时间最大	-	-	0.0450 us	0.0450 us	0.0450 us	0.0500 us
最大重复峰值反向电压	-	-	100 V	150 V	200 V	600 V
最大平均正向电流	-	-	1 A	1 A	1 A	1 A

推荐资源

器件捷径: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

热门器件

开源项目推荐更多

热门活动更多

热门文章更多

技术资料推荐更多