MJP122
NPN PLASTIC ENCAPSULATE TRANSISTORS
P b
Lead(Pb)-Free
1.BASE
2.COLLECTOR
3.EMITTER
Features:
* High DC current gain
* Electrically similar to popular TIP122
* Built-in a damper diode at E-C
TO-251
ABSOLUTE MAXIMUM RATINGS (T
A
=25˚C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
@T
C
=25°C
@T
A
=25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
j
T
stg
Value
100
100
5.0
5.0
20.0
1.5
+150
-55 to +150
Unit
V
V
V
A
W
˚C
˚C
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MJP122
ELECTRICAL CHARACTERISTICS(T
A
=25˚C unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
I
C
=1mA
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
Min
100
100
5.0
-
-
-
Typ
-
-
-
-
-
-
Max
-
-
-
10
10
2
Unit
V
V
V
µA
µA
mA
Collector-Emitter Breakdown Voltage
I
C
=30mA
Emitter-Base Breakdown Voltage
I
E
=3mA
Collector Cutoff Current
V
CB
=100V
Collector Emitter Cutoff Current
V
CE
=50V
Emitter Cutoff Current
V
EB
=5.0V
ON CHARACTERISTICS
DC Current Gain
V
CE
=4V, I
C
=4A
V
CE
=4V, I
C
=8A
Collector-Emitter Saturation Voltage
I
C
=4A, I
B
=16mA
I
C
=8A, I
B
=80mA
Base-Emitter Saturation Voltage
I
C
=8A, I
B
=80mA
Base-Emitter On Voltage
V
CE
=4A, I
C
=4A
Output Capacitance
V
CB
=10V, I
E
=0, f=0.1MHz
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
(on)
C
ob
1000
100
-
-
-
-
-
-
-
-
-
200
12000
-
2.0
4.0
4.5
2.8
-
-
V
V
V
pF
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MJP122
Typical Characteristics
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MJP122
TO-251 Outline Dimensions
unit:mm
E
A
4
G
H
B
J
1
2
3
N
D
M
K
C
L
Dim
A
B
C
D
E
G
H
J
K
L
M
N
TO-251
M in
6 .4 0
6 .8 0
0 .5 0
-
2 .2 0
0 .4 5
1 .0 0
5 .4 0
0 .4 5
0 .9 0
6 .5 0
-
M ax
6 .8 0
7 .2 0
0 .8 0
2 .3 0
2 .5 0
0 .5 5
1 .6 0
5 .8 0
0 .6 9
1 .5 0
-
0 .9 0
1 . Em it t er
2 . Base
3 . Collect or
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