SSF8521
DESCRIPTION
The SSF8521 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge .
A
Schottky diode is provided to facilitate the
implementation of a bidirectional blocking switch,
or for DC-DC conversion applications.
Schematic diagram
GENERAL FEATURES
●
MOSFET
V
DS
= -20V,I
D
= -4.4A
R
DS(ON)
< 170mΩ @ V
GS
=-1.8V
R
DS(ON)
< 110mΩ @ V
GS
=-2.5V
R
DS(ON)
< 80mΩ @ V
GS
=-4.5V
SCHOTTKY
V
R
= 20V, I
F
= 4.1A, V
F
<0.575V @ 1.0A
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
Marking and pin Assignment
Application
●DC-DC
conversion applications
●Load
switch
●Power
management
DFN3X2-8L Bottom View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
8521
Device
SSF8521
Device Package
DFN3X2-8L
Reel Size
－
Tape width
－
Quantity
－
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note 1)
Schottky reverse voltage
Continuous Forward Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
V
R
I
F
MOSFET
-20
±8
-4.4
-13
Schottky
Unit
V
V
A
A
20
4.1
2.1
-55 To 150
-55 To 150
V
A
W
℃
P
D
T
J
,T
STG
THERMAL CHARACTERISTICS
©
Silikron Semiconductor CO.,LTD
2008.12.1
Version : 1.1
page 1 of 5
A Good-Ark Company
SSF8521
MOSFET
Thermal Resistance, Junction-to-Ambient (Note 2)
R
θJA
100
℃
/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-4.5V, I
D
=-3.2A
Static Drain-Source On-Resistance
R
DS(ON)
V
GS
=-2.5V, I
D
=-2.2A
V
GS
=-1.8V, I
D
=-1.0A
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
Reverse Recovery Time
Reverse Recovery Charge
V
SD
Trr
Qrr
V
GS
=0V,I
S
=-2.5A
V
GS
= 0 V, I
S
=
−1.0
A ,
d
IS
/dt = 100 A/us
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=-10V,I
D
=-3.2A,V
GS
=-4.5V
V
DD
=-10V,I
D
=-3.2A
V
GS
=-4.5V,R
GEN
=2.4Ω
C
lss
C
oss
C
rss
V
DS
=-10V,V
GS
=0V,
F=1.0MHz
g
FS
V
DS
=-10V,I
D
=-2.9A
BV
DSS
I
DSS
I
GSS
V
GS
=0V I
D
=-250μA
V
DS
=-16V,V
GS
=0V
V
GS
=±8V,V
DS
=0V
Min
Typ
Max
Unit
-20
-1
±100
V
μA
nA
-0.45
64
85
120
8
-1.2
80
110
170
V
mΩ
S
680
100
70
PF
PF
PF
5.8
11.7
16
12.4
7.4
1.4
2.5
nS
nS
nS
nS
nC
nC
nC
-0.8
13.5
6.5
-1.2
V
nS
nC
©
Silikron Semiconductor CO.,LTD
2008.12.1
Version : 1.1
page 2 of 5
A Good-Ark Company
SSF8521
SCHOTTKY DIODE PARAMETERS
Forward Voltage Drop
Maximum reverse leakage current
V
F
Irm
I
F
=1.0A
V
R
=20V
0.51
0.575
5
V
uA
NOTES:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production testing.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
t
d(on)
t
on
t
r
90%
t
d(off)
t
off
t
f
90%
Vin
Vgs
Rgen
G
Rl
D
Vout
V
OUT
10%
INVERTED
10%
90%
S
V
IN
10%
50%
50%
PULSE WIDTH
Figure1:Switching Test Circuit
Figure 2:Switching Waveforms
Z
θJA
Normalized Transient
Thermal Resistance
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedanc
©
Silikron Semiconductor CO.,LTD
2008.12.1
Version : 1.1
page 3 of 5
A Good-Ark Company
SSF8521
DFN3X2-8L PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
COMMON DIMENSIONS(MM)
PKG.
REF.
A
A1
A3
D
E
b
L
D2
E2
e
NOTES：
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exac
W:VERY VERY THIN
MIN.
0.70
0.00
2.95
1.95
0.25
0.28
0.77
0.20
NOM.
0.75
—
0.2 REF.
3.00
2.00
0.30
0.35
0.92
0.30
0.65 BCS.
3.05
2.05
0.35
0.43
1.02
0.40
MAX.
0.80
0.05
©
Silikron Semiconductor CO.,LTD
2008.12.1
Version : 1.1
page 4 of 5
A Good-Ark Company
SSF8521
ATTENTION:
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Any and all Silikron products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can
be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron
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Silikron assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
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Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and
functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that
cannot be evaluated in an independent device, the customer should always evaluate and test devices
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Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with some probability. It is possible that these probabilistic failures could give rise to
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Any and all information described or contained herein are subject to change without notice due to
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This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.
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©
Silikron Semiconductor CO.,LTD
2008.12.1
Version : 1.1
page 5 of 5
A Good-Ark Company
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