SSF7510
Feathers:
Advanced trench process technology
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Avalanche Energy 100% test
Description:
The SSF7510 is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the cell density
and reduces the on-resistance; its typical Rdson can reduce
to 6.8mohm.
Application:
Power switching application
SSF7510 TOP View (TO220)
Absolute Maximum Ratings
Parameter
I
D
@T
c
=25ْ C
I
D
@T
c
=100ْC
I
DM
P
D
@T
C
=25ْC
V
GS
dv/dt
E
AS
E
AR
T
J
T
STG
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-case
Junction-to-ambient
Parameter
BV
DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Forward transconductance
Drain-to-Source leakage current
Gate-to-Source forward leakage
2008.8.1
ID=75A
BV=75V
Rdson=10mohm
Max.
75
70
300
150
2.0
±20
31
480
TBD
–55 to +150
Units
A
W
W/ْ C
V
v/ns
mJ
Continuous drain current,VGS@10V
Continuous drain current,VGS@10V
Pulsed drain current
①
Power dissipation
Linear derating factor
Gate-to-Source voltage
Peak diode recovery voltage
Single pulse avalanche energy
②
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
ْ
C
Min.
—
—
Min.
75
—
2.0
-
—
—
—
Typ.
—
Typ.
0.83
—
Max.
—
62
Units
ْ
C/W
Electrical Characteristics @TJ=25
ْ
C(unless otherwise specified)
Max. Units
—
0.01
4.0
—
1
10
100
μA
nA V
GS
=20V
page
1of5
Test Conditions
V
GS
=0V,I
D
=250μA
V
GS
=10V,I
D
=40A
V
DS
=V
GS
,I
D
=250μA
V
DS
=5V,I
D
=30A
V
DS
=75V,V
GS
=0V
V
DS
=75V,
V
GS
=0V,T
J
=150ْC
V
Ω
V
S
0.007
2.7
58
—
—
—
©
Silikron Semiconductor CO.,LTD.
Version : 1.0
SSF7510
Gate-to-Source reverse leakage
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
—
—
—
—
—
—
—
—
—
—
—
—
90
14
24
18.2
15.6
70.5
13.8
3150
300
240
-100
—
—
—
—
—
—
—
—
—
—
nS
V
GS
=-20V
I
D
=30A
nC V
DD
=30V
V
GS
=10V
V
DD
=30V
I
D
=2A ,R
L
=15Ω
R
G
=2.5Ω
V
GS
=10V
V
GS
=0V
pF V
DS
=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
①
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-on Time
.
.
Min.
—
—
—
－
－
Typ.
—
—
—
57
107
Max.
75
A
300
1.3
—
—
V
nS
nC
Units
showing the
integral reverse
p-n junction diode.
T
J
=25ْC,I
S
=40A,V
GS
=0V
③
T
J
=25ْC,I
F
=75A
di/dt=100A/μs
③
Test Conditions
MOSFET symbol
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
①
Repetitive rating; pulse width limited by max junction temperature.
②
Test condition: L =0.3mH, ID = 57A, VDD = 47V
③
Pulse width≤300μS; duty cycle≤1.5% RG = 25Ω
Starting TJ = 25°C
EAS test circuits:
BV
dss
Gate charge test circuit:
©
Silikron Semiconductor CO.,LTD.
2008.8.1
Version : 1.0
page
2of5
SSF7510
Switch Time Test Circuit：
Switch Waveforms:
Transfer Characteristic
Capacitance
On Resistance vs Junction Temperature
Breakdown Voltage vs Junction Temperature
©
Silikron Semiconductor CO.,LTD.
2008.8.1
Version : 1.0
page
3of5
SSF7510
Gate Charge
Source-Drain Diode Forward Voltage
Safe Operation Area
Max Drain Current vs Junction Temperature
Transient Thermal Impedance Curve
©
Silikron Semiconductor CO.,LTD.
2008.8.1
Version : 1.0
page
4of5
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