SSF4006
Feathers:
Advanced trench process technology
avalanche energy, 100% test
Fully characterized avalanche voltage and current
Description:
The SSF4006 is a new generation of high voltage and low
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF4006 is assembled
in high reliability and qualified assembly house.
Application:
Commercial-industrial application
SSF4006 TOP View (T0-220)
ID =160A
BV=40V
Rdson=0.005Ω
Absolute Maximum Ratings
Parameter
I
D
@T
c
=25ْ C
I
D
@T
c
=100ْC
I
DM
P
D
@T
C
=25ْC
V
GS
E
AS
E
AR
dv/dt
T
J
T
STG
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-case
Junction-to-ambient
Min.
—
—
Typ.
0.83
—
Max.
—
62
Units
ْ
C/W
Continuous drain current,VGS@10V
Continuous drain current,VGS@10V
Pulsed drain current
①
Power dissipation
Linear derating factor
Gate-to-Source voltage
Single pulse avalanche energy
Repetitive avalanche energy
Peak diode recovery voltage
Operating Junction and
Storage Temperature Range
②
Max.
160
100
640
150
2.0
±20
480
TBD
31
–55 to +150
W
W/ْ C
V
mJ
mJ
v/ns
ْ
C
A
Units
Electrical Characteristics @TJ=25
ْ
C(unless otherwise specified)
Parameter
BV
DSS
V
GS(th)
I
DSS
Drain-to-Source breakdown voltage
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Gate-to-Source reverse leakage
R
DS(on)
Static Drain-to-Source on-resistance
Min.
40
—
2.0
—
—
—
—
2009.6.10
Typ.
—
—
—
—
—
—
Max. Units
—
4.0
1
10
100
-100
V
Ω
V
Test Conditions
V
GS
=0V,I
D
=250μA
V
GS
=10V,I
D
=30A
V
DS
=V
GS
,I
D
=250μA
V
DS
=40V,V
GS
=0V
0.0045 0.005
μA
V
DS
=40V,
V
GS
=0V,T
J
=150ْC
nA
V
GS
=20V
V
GS
=-20V
Version : 1.0
page
1of4
I
GSS
©
Silikron Semiconductor CO.,LTD.
SSF4006
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
—
—
—
—
—
—
—
—
—
—
90
14
24
18.2
15.6
70.5
13.8
3150
300
240
nS
—
—
V
DD
=30V
I
D
=2A ,R
L
=15Ω
R
G
=2.5Ω
V
GS
=10V
V
GS
=0V
pF V
DS
=25V
f=1.0MHZ
nC
I
D
=30A,V
GS
=10V
V
DD
=30V
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
①
Reverse Recovery Time
Forward Turn-on Time
.
.
Min.
—
—
—
－
－
Typ.
—
—
—
57
107
Max.
160
A
640
1.3
—
—
V
nS
μC
Units
Test Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
=25ْC,I
S
=40A,V
GS
=0V
③
T
J
=25ْC,I
F
=75A
di/dt=100A/μs
③
V
SD
Diode Forward Voltage
t
rr
t
on
Q
rr
Reverse Recovery Charge
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
①
Repetitive rating; pulse width limited by max junction temperature.
②
Test condition: L =0.3mH, VDD = 47V,Id=57A
③
Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω
Starting TJ = 25°C
©
Silikron Semiconductor CO.,LTD.
2009.6.10
Version : 1.0
page
2of4
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