SSF2783
GENERAL FEATURES
●
N-Channel
V
DS
= 20V,I
D
= 3.5A
R
DS(ON)
< 60mΩ @ V
GS
=4.5V
R
DS(ON)
< 90mΩ @ V
GS
=2.5V
R
DS(ON)
< 150mΩ @ V
GS
=1.8V
P-Channel
V
DS
= -20V,I
D
= -2.7A
R
DS(ON)
< 110mΩ @ V
GS
=-4.5V
R
DS(ON)
< 145mΩ @ V
GS
=-2.5V
R
DS(ON)
< 220mΩ @ V
GS
=-1.8V
N-channel
P-channel
●
Schematic diagram
●High
Power and current handing capability
●Lead
free product is acquired
●Surface
Mount Package
Pin Assignment
Application
●DC−DC
Conversion Circuits
●Load/Power
Switching with Level Shift
TSOP-6
top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
2783
Device
SSF2783
Device Package
TSOP-6
Reel Size
－
Tape width
－
Quantity
－
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Maximum Power Dissipation
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
N-Channel
20
±8
3.5
2.4
11
1.1
0.6
-55 To 150
P-Channel
-20
±8
-2.7
-1.8
-8
1.1
0.6
-55 To 150
Unit
V
V
A
A
W
℃
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note2)
R
θJA
N-Ch
P-Ch
87
87
℃
/W
©Silikron Semiconductor CO.,LTD.
1
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v1.0
SSF2783
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V I
D
=250μA
V
GS
=0V I
D
=-250μA
V
DS
=20V,V
GS
=0V
V
DS
=-20V,V
GS
=0V
V
GS
=±8V,V
DS
=0V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
-20
1
-1
±100
±100
V
Symbol
Condition
Min
Typ
Max
Unit
Zero Gate Voltage Drain Current
I
DSS
μA
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
GSS
nA
V
GS(th)
V
DS
=V
GS
,I
D
=250μA
V
DS
=V
GS
,I
D
=-250μA
V
GS
=4.5V, I
D
=3.5A
V
GS
=-4.5V, I
D
=-2.7A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.6
-0.6
41
83
51
110
67
140
10
9
1
-1
60
100
90
145
150
220
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=2.5V, I
D
=2.9A
V
GS
=-2.5V, I
D
=-2.4A
V
GS
=1.8V, I
D
=2.2A
V
GS
=-1.8V, I
D
=-1.9A
mΩ
Forward Transconductance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
g
FS
V
DS
=10V,I
D
=3.5A
V
DS
=-10V,I
D
=-2.7A
S
t
d(on)
N-Ch
N-Ch
V
DD
=10V, I
D
=1A
V
GEN
=4.5V,R
GEN
=6Ω
P-Ch
N-Ch
P-Ch
P-Ch
V
DD
=-10V, I
D
=-1A
V
GEN
=-4.5V,R
GEN
=6Ω
N-Ch
P-Ch
N-Ch
P-Ch
6.5
10
4
6
16
33
3
29
nS
Turn-on Rise Time
t
r
nS
Turn-Off Delay Time
t
d(off)
nS
Turn-Off Fall Time
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
t
f
nS
C
lss
N-Ch
V
DS
=10V,V
GS
=0V,
F=1.0MHz
P-Ch
V
DS
=10V,V
GS
=0V,
F=1.0MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
380
500
70
80
40
45
PF
Output Capacitance
C
oss
PF
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
C
rss
PF
©Silikron Semiconductor CO.,LTD.
2
http://www.silikron.com
v1.0
SSF2783
Total Gate Charge
Q
g
N-Ch
V
DS
=10V,I
D
=2A,
V
GS
=4.5V
P-Ch
V
DS
=-10V,I
D
=-1A,
V
GS
=-4.5V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
4.6
6
0.9
1.1
0.8
1.2
nC
Gate-Source Charge
Q
gs
nC
Gate-Drain Charge
Q
gd
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
V
SD
V
GS
=0V,I
S
=0.8A
V
GS
=0V,I
S
=-0.8A
N-Ch
P-Ch
0.7
-0.7
1.2
-1.2
V
V
NOTES:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production testing.
©Silikron Semiconductor CO.,LTD.
3
http://www.silikron.com
v1.0
SSF2783
N-Channel THERMAL CHARACTERISTICS
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 1: Normalized Maximum Transient Thermal Impedance
P-Channel THERMAL CHARACTERISTICS
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 2: Normalized Maximum Transient Thermal Impedance
©Silikron Semiconductor CO.,LTD.
4
http://www.silikron.com
v1.0
SSF2783
TSOP-6 PACKAGE INFORMATION
SYMBOL
A
A1
b
c
D
E
E1
e
L
NOTES
：
Millimeters
MIN
0.90
0.10
0.30
0.08
2.70
2.60
1.40
0.95 BSC
0.35
0.55
0.50
0.20
3.10
3.00
1.80
MAX
1.10
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
5
http://www.silikron.com
v1.0
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