WTN9435
Surface Mount P-Channel
Enhancement Mode Power MOSFET
P b
Lead(Pb)-Free
2,4 DRAIN
DRAIN CURRENT
-6.0 AMPERES
DRAIN SOURCE VOLTAGE
-30 VOLTAGE
1
GATE
Features:
* Super high dense cell design for low R
DS
(ON)
R
DS
(ON) < 50mΩ @ V
GS
= -10V
* Simple Drive Requirement
* Lower On-Resistance
* Fast Switching
3
SOURCE
1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
4
1
2
3
SOT-223
Maximum Ratings
(T
A
=25℃
Rating
Drain-Source Voltage
Gate-Source Voltage
Unless Otherwise Specified)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
θJA
T
J
,T
stg
Value
-30
±25
-6.0
-4.8
-20
2.7
45
-55 ~ +150
Unit
V
V
A
A
W
°C/W
°C
Continuous Drain Current
3
,VGS@10V(T
A
=25°C)
,VGS@10V(T
A
=70°C)
Pulsed Drain Current
1
Total Power Dissipation(T
A
=25°C)
Maximum Junction-ambient
3
Operating Junction and Storage Temperature Range
Device Marking
WTN9435 = 9435
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WTN9435
Electrical Characteristics
(T
A
= 25℃
Characteristic
Unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
GS
= 0, I
D
= -250µA
Gate-Source Threshold Voltage
V
DS
= V
GS,
I
D
= -250µA
Gate-Source Leakage Current
V
GS
= ± 25V
Drain-Source Leakage Current(T
j
=25°C)
V
DS
= -30A, V
GS
= 0
Drain-Source Leakage Current(T
j
=70°C)
V
DS
= -24V, V
GS
= 0
Drain-Source On-Resistance
2
V
GS
= -10A, I
D
= -5.3A
V
DS
= -4.5A, I
D
= -4.2A
Forward Transconductance
V
DS
= -10A, I
D
= -5.3A
V
(BR)DSS
V
GS(Th)
I
GSS
-30
-1.0
-
-
-
-
-
-3.0
±100
V
V
nA
I
DSS
-
-
-
-
-
-
10
-1
-25
50
100
-
μA
R
DS(ON)
-
-
-
mΩ
g
fs
S
Dynamic
Input Capacitance
V
GS
= 0V, V
DS
= -15V, f = 1.0MHz
Output Capacitance
V
GS
= 0V, V
DS
= -15V, f = 1.0MHz
Reverse Transfer Capacitance
V
GS
= 0V, V
DS
= -15V, f = 1.0MHz
C
iss
C
oss
C
rss
-
-
-
507
222
158
912
-
-
pF
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WTN9435
Switching
Turn-on Delay Time
2
V
DS
=-15V,V
GS
=-10V,I
D
=1A,R
D
=15Ω,R
G
=6Ω
Rise Time
V
DS
=-15V,V
GS
=-10V,I
D
=1A,R
D
=15Ω,R
G
=6Ω
Turn-off Delay Time
V
DS
=-15V,V
GS
=-10V,I
D
=1A,R
D
=15Ω,R
G
=6Ω
Fall Time
V
DS
=-15V,V
GS
=-10V,I
D
=1A,R
D
=15Ω,R
G
=6Ω
Total Gate Charge
2
V
DS
=-24V,V
GS
=-4.5V,I
D
=-5.3A
Gate-Source Charge
V
DS
=-24V,V
GS
=-4.5V,I
D
=-5.3A
Gate-Drain Change
V
DS
=-24V,V
GS
=-4.5V,I
D
=-5.3A
td(on)
-
-
-
-
-
-
-
11
8
25
17
9.2
2.8
5.2
-
-
ns
-
-
16
-
-
nC
tr
td(off)
tf
Q
g
Q
gs
Q
gd
Source-Drain Diode Characteristics
Forward On Voltage
2
V
GS
=0V, I
S
=-2.3A
Reverse Recovery Time
V
GS
=0V, I
S
=-5.3A, dl/dt=100A/μs
Reverse Recovery Charge
V
GS
=0V, I
S
=-5.3A, dl/dt=100A/μs
V
SD
T
rr
Q
rr
-
-
-
-
29
20
-1.2
-
-
V
ns
nC
Note:
1. Pulse width limited by max, junction temperature.
2. Pulse width ≤ 300μs, duty cycle ≤ 2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board; 120°C/W when mounted on Min, copper pad.
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WTN9435
30
25
20
15
10
5
0
T
A
=25° C
-10V
-8.0V
-6.0V
-5.0V
V
G
= -4.0V
30
25
TA =150 ° C
-10V
-8.0V
-6.0V
-5.0V
V
G
=-4.0V
-I
D
,DRAIN CURRENT (A)
-I
D
,Drain Current (A)
5
20
15
10
5
0
0
-V
DS
1
2
3
4
,DRAIN-TO-SOURCE VOLTAGE(V)
0
1
FIG.1 Typical Output Characteristics
110
100
90
80
T
A
= -25°C
I
D
= -5.3A
1.8
1.6
Fig.2 Typical Output Characteristics
I
D
= -5.3A
-V
DS
,Drain-to-source Voltage(V)
2
3
4
5
6
7
V
G
= -10V
Normalized R
Ds(on)
1.4
1.2
1.0
0.8
0.0
-50
R
Ds(on)
(mΩ)
70
60
50
40
30
3
4
5
6
7
8
9
10
11
0
50
100
150
Fig.3 On-Resistance v.s. Gate Voltage
100
4
-V
GS
,Gate-to-source Voltage(V)
Fig.4 Normalized OnResistance
T
j
,Junction Temperature(°C)
10
3
-V
GS(th)
(V )
1.3
1.5
T
j
= 150°C
-I
S
(A )
T
j
= 25°C
1
2
0.1
1
0.01
0.1
0.3
0.5
0.7
0.9
1.1
0
-50
0
50
100
150
Fig.5 Forward Characteristics of
Reverse Diode
V
DS
,Source-to-Drain Voltage(V)
Fig.6 Gate Threshold Voltage v.s.
Junction Temperature
T
j
,Junction Temperature(°C)
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WTN9435
14
10000
I
D
= -5.3A
V
DS
= -24V
1000
f = 1.0MHz
-V
GS
, Gate to Source Voltage(V)
12
10
8
6
4
2
0
C ( pF)
Ciss
Coss
Crss
100
0
2
4
6
8
10
12
14
16
18
0
1
5
Fig 7. Gate Charge Characteristics
100
Q
G
, Total Gate Charge(nC)
-V
DS
, Drain-to-Source Voltage(V)
9
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10
1ms
10ms
1
Normalized Thermal Response(R
θ ja
)
-I
D
(A)
100ms
Is
T
A
= 25°C
Single Pulse
DC
1
10
100
P
DM
t
T
0.01
0.1
Single pulse
Duty factor = t / T
Peak T
j
=P
DM
x R
θ ju
+ T
a
R
θ ja
=120°C / W
0.01
0.1
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, Drain-to-Source Voltage(V)
Fig 9. Maximum Safe Operation Area
V
DS
90%
Fig 10. Effective Transient Thermal Impedance
V
G
Q
G
-4.5V
t, Pulse Width(s)
Q
GS
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Q
GD
Charge
Q
Fig 11. Switching Time Circuit
Fig.12 Gate Charge Waveform
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