WTM649A
PNP Epitaxial Planar Transistors
P b
Lead(Pb)-Free
1
1. BASE
2. COLLECTOR
3. EMITTER
SOT-89
2
3
ABSOLUTE MAXIMUM RATINGS (T
A
=25˚C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(Pulse)
P
D
T
j
T
stg
Limits
-180
-160
-5
-1.5
-3
1
150
-55 to +150
Unit
V
V
V
A
W
˚C
˚C
Device Marking
WTM649A=649A
ELECTRICAL CHARACTERISTICS(T
A
=25˚Cunless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
I
C
=-1mA, I
E
=0
Symbol
Min
Typ
Max
Unit
BV
CBO
BV
CEO
BV
EBO
I
CBO
-180
-160
-5
-
-
-
-
-
-
-
-
-10
V
V
V
µA
Collector-Emitter Breakdown Voltage
I
C
=-10mA, I
B
=0
Emitter-Base Breakdown Voltage
I
E
=-1mA, I
C
=0
Collector Cutoff Current
V
CB
=-160V, I
E
=0
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WTM649A
ELECTRICAL CHARACTERISTICS
(T
A
=25˚C Unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(1)
DC Current Gain
V
CE
=-5V, I
C
=-150mA
V
CE
=-5V, I
C
=-500mA
Collector-Emitter Saturation Voltage
I
C
=-600mA, I
B
=-50mA
Base-Emitter Saturation Voltage
V
CE
=-5V, I
C
=-150mA
1. Pulse Test: Pulse Width ≤ 380µs, Duty Cycle ≤ 2%
h
FE1
h
FE2
V
CE(sat)
V
BE(on)
60
30
-
-
-
-
-
-
200
-
-1
-1.5
-
V
V
DYNAMIC CHARACTERISTICS
Transition Frequency
V
CE
=-5V, I
C
=-150mA, f=100MHz
Output Capacitance
V
CB
=-10V, f=1MHz
f
T
C
ob
-
-
140
27
-
-
MHz
pF
CLASSIFICATION OF h
FE1
Rank
h
FE1
B
60-120
C
100-200
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WTM649A
ELECTRICAL CHARACTERISTIC CURVES
Collector to emiter saturation voltage
350
DC Current Transistor Ratio h
FE
V
CE
= -5V
Ta=75˚C
300
250
200
150
100
50
0
-1
-10
-100
-1000
-25˚C
25˚C
-1.2
-1.0
V
CE(sat)
(V)
-0.8
-0.6
-0.4
-0.2
0
-1
Ta=-75˚C
-25˚C
25˚C
-10
-100
Collector current I
C
(mA)
-1000
l
C
=101
B
Collector current I
C
(mA)
Fig.1 Current Gain & Collector Current
Base to emitter saturation voltage V
BE(sat)
(V)
1.2
1.0
0.8
0.6
0.4
0.2
0
1
3
10
30
100 300 1000
Collector current I
C
(mA)
T
C
=-25˚C
Fig.2 Satueation Voltage & Collector Current
240
Gain bandwidth product f
T
(MHz)
V
CE
=5V
Ta=-25˚C
200
160
120
80
40
0
10
30
100
300
Collector current I
C
(mA)
1000
l
C
=101
B
75˚C 25˚C
Fig.3 Satueation Voltage & Collector Current
Collector output capacitance C
ob
(pF)
200
100
50
20
10
5
2
f = 1 MHz
I
E
= 0
Collector Current I
C
(A )
Fig.4 Gain Bandwidth Product
& Collector Current
-3
-1.0
(-40V, -0.5A)
-0.3
-0.1
-0.03
-0.01
-1
(-160V, -0.02A)
-3
-10
-30 -100 -300
Collector to emitter voltage V
CE
(V)
DC Operation (T
C
=25˚C)
I
Cmax
(-13.3V, -1.5A)
-1
-3
-10
-30
-100
Collector to base voltage V
CB
(V)
Fig.5 Capacitance & Collector to Base Voltage
Fig.6 Safe Operating Area
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WTM649A
SOT-89 Outline Dimensions
unit:mm
E
G
Dim
A
SOT-89
J
C
H
K
L
B
D
A
B
C
D
E
G
H
J
K
L
Min
Max
1.400
1.600
0.320
0.520
0.360
0.560
0.350
0.440
4.400
4.600
1.400
1.800
2.300
2.600
3.940
4.250
1.500TYP
2.900
3.100
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