WTM1797
PNP EPITAXIAL PLANAR TRANSISTOR
P b
Lead(Pb)-Free
FEATURES
1. BASE
2. COLLECTOR
3. EMITTER
1
2
* Low saturation voltage
* Excellent DC current gain characteristics
* Complements to 2SC4672
3
SOT-89
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Value
-50
-50
-6
-2
500
150
-55-150
Units
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test
I
C
=-50? A, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50? A, I
C
=0
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-2V, I
C
=-500mA
I
C
=-1A, I
B
=-50mA
V
CE
=-2V, I
C
=-0.5A, f=100MHz
V
CB
=-10V, I
E
=0, f=1MHz
conditions
MIN
-50
-50
-6
TYP
MAX
UNIT
V
V
V
?
A
?
A
-
-
-
-
-
-
-
200
36
-
-
-
-0.1
-0.1
270
-0.35
-
-
82
-
-
-
V
MHz
pF
-
-
CLASSIFICATION OF
Rank
Range
Marking
h
FE
P
82-180
AGP
Q
120-270
AGQ
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14-Oct-08
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