WTK9410
Surface Mount N-Channel
Enhancement Mode MOSFET
P b
Lead(Pb)-Free
DRAIN CURRENT
18 AMPERES
DRAIN SOURCE VOLTAGE
30 VOLTAGE
D
1
3
S
S
S
G
8
7
D
2
4
D
D
6
5
Features:
* Simple Drive Requirement.
* Low On-Resistance.
* Fast Switching.
* Super high dense cell design for low R
DS(ON)
R
DS(ON)
<5.5mΩ@VGS=10V
R
DS(ON)
<6.2mΩ@VGS=4.5V
R
DS(ON)
<8.0mΩ@VGS=2.5V
* Rugged and Reliable.
* SOP-8 Package.
1
SOP-8
Maximum Ratings
(T
A
=25°C Unless Otherwise Specified)
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(1)
(T
A
=25°C)
(T
A
=70°C)
Pulsed Drain Current
(2)
Power Dissipation(T
A
=25°C)
Maximax Junction-to-Ambient
(1)
Junction Temperature Range
Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
θJA
T
J
T
stg
Value
30
±12
18
15
80
2.5
50
+150
-55 to +150
Unite
V
V
A
A
W
°C/W
°C
°C
Device Marking
WTK9410 = 9410SC
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WTK9410
Electrical Characteristics
(T
A
=25°C Unless otherwise noted)
Static
(2)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250µA
Gate-Source Threshold Voltage
V
DS
=V
GS
, I
D
=250µA
Gate-Source Leakage Current
V
DS
=0V, V
GS
=±12V
Drain-Source Leakage Current
@Tj=25C, V
DS
=30V,V
GS
=0V
@Tj=70C, V
DS
=24V,V
GS
=0V
Drain-Source On-Resistance
3
V
GS
=10V, I
D
=18A
V
GS
=4.5V, I
D
=12A
V
GS
=2.5V, I
D
=6A
Forward Transconductance
V
DS
=10V, I
D
=12A
V
(BR)DSS
V
GS(th)
I
GSS
30
-
-
-
-
1.2
V
V
-
-
±100
nA
I
DSS
-
-
1
25
µA
r
DS(on)
-
-
5.5
6.2
8.0
-
mΩ
gfs
-
47
S
Dynamic
(3)
Input Capacitance
V
DS
=25V,V
GS
=0V, f=1.0MHZ
Output Capacitance
V
DS
=25V,V
GS
=0V, f=1.0MHZ
Reverse Transfer Capacitance
V
DS
=25V,V
GS
=0V, f=1.0MHZ
Ci
ss
C
oss
C
rss
-
-
-
5080
660
400
8100
-
-
pF
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WTK9410
Electrical Characteristics
(T
A
=25°C Unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Switching
Turn-On Delay Time
V
DS
=15V, V
GS
=10V, I
D
=1A, R
G
=3.3
Ω,
R
D
=15
Ω
Rise Time
V
DS
=15V, V
GS
=10V, I
D
=1A, R
G
=3.3
Ω,
R
D
=15
Ω
Turn-Off Time
V
DS
=15V, V
GS
=10V, I
D
=1A, R
G
=3.3
Ω,
R
D
=15
Ω
Fall Time
V
DS
=15V, V
GS
=10V, I
D
=1A, R
G
=3.3
Ω,
R
D
=15
Ω
Total Gate Charge
3
V
DS
=24V, V
GS
=4.5V, I
D
=18A
Gate-Source Charge
V
DS
=24V, V
GS
=4.5V, I
D
=18A
Gate-Drain Charge
V
DS
=24V, V
GS
=4.5V, I
D
=18A
T
d(on)
Tr
T
d(off)
Tf
Qg
-
-
-
-
-
-
-
16
12
-
-
-
nS
96
30
-
95
59
Qgs
Qgd
10
23
-
-
nC
Source-Drain Diode Characteristics
Forward On Voltage
3
V
GS
=0V,I
S
=18A
Reverse Recovery Time
3
V
GS
=0V,I
S
=18A, dl/dt=100A/ s
Reverse Recovery Charge
V
GS
=0V,I
S
=18A, dl/dt=100A/ s
V
SD
-
-
-
-
43
39
1.2
-
-
V
nS
nC
T
rr
Q
rr
Note:
1. Surface mounted on 1 in
2
copper pad of FR4 board; 125°C/W when mounted on Min. copper pad.
2. Pulse width limited by Max. junction temperature.
3. Pulse width ≤ 300us, duty cycle ≤ 2%.
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WTK9410
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WTK9410
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