MITSUBISHI THYRISTOR MODULES
TM10T3B-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
TM10T3B-M,-H
•
I
O
•
V
RRM
•
•
•
•
DC output current ......................
20A
Repetitive peak reverse voltage
........
400/800V
V
DRM
Repetitive peak off-state voltage
........
400/800V
3 Phase Mix Bridge
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC motor control, NC equipment, AC motor control, contactless switches,
electric furnace temperature control, light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
80
2
2
2–φ4.5
P
T
K
GT
GS
GR
17
34
S
R
22
GR
GS
GT
K
R
S
N
17
68
P
7.5
T
N
Tab#110, t=0.5
7
Tab#250, t=0.8
18.5
LABEL
6
31
2
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM10T3B-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Voltage class
M
400
480
320
400
480
320
H
800
960
640
800
960
640
Unit
V
V
V
V
V
V
Symbol
I
O
I
TSM
, I
FSM
I
2t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
V
iso
—
—
Parameter
DC output current
Surge (non-repetitive) current
I
2t
for fusing
Conditions
3-phase fullwave rectified, TC=79°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
V
D
=1/2V
DRM
, I
G
=0.5A, T
j
=125°C
Ratings
20
200
1.7
×
10
2
Unit
A
A
A
2
s
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
g
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
50
5.0
0.5
10
5.0
2.0
–40~125
–40~125
Charged part to case
Mounting screw M4
Typical value
2500
0.98~1.47
10~15
130
ELECTRICAL CHARACTERISTICS
Limits
Symbol
I
RRM
I
DRM
V
TM
, V
FM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
—
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
Forward voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
T
j
=125°C, V
RRM
applied
T
j
=125°C, V
DRM
applied
T
j
=125°C, I
TM
=I
FM
=20A, instantaneous meas.
T
j
=125°C, V
D
=2/3V
DRM
T
j
=25°C, V
D
=6V, R
L
=2Ω
T
j
=125°C, V
D
=1/2V
DRM
T
j
=25°C, V
D
=6V, R
L
=2Ω
Junction to case (per 1/6 module)
Case to fin, Conductive grease applied (per 1/6 module)
Measured with a 500V megohmmeter between main terminal
and case
Test conditions
Min.
—
—
—
500
—
0.25
10
—
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
4.0
4.0
1.3
—
2.0
—
50
4.5
0.6
—
Unit
mA
mA
V
V/µs
V
V
mA
°C/
W
°C/
W
MΩ
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM10T3B-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM RATINGS
Item
Thyristor
Diode
—
—
—
—
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
I
T (RMS)
I
F (RMS)
I
T (AV)
I
F (AV)
I
TSM
I
FSM
I
2t
di/dt
Item
Thyristor
Diode
P
GM
P
G (AV)
V
FGM
I
FGM
T
j
T
stg
—
—
—
—
ELECTRICAL CHARACTERISTICS
Item
Thyristor
Diode
—
—
—
—
—
I
RRM
I
DRM
V
TM
V
FM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC
RATED SURGE (NON-REPETITIVE)
CURRENT
SURGE (NON-REPETITIVE)
CURRENT (A)
10
3
T
j
=125°C
7
5
CURRENT (A)
200
160
3
2
10
2
7
5
3
2
10
1
0.8
1.0
1.2
1.4
1.6
1.8
120
80
40
0
1
2 3
5 7 10
20 30
50 70100
FORWARD VOLTAGE (V)
CONDUCTION TIME
(CYCLE AT 60Hz)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM10T3B-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
(PER SINGLE ELEMENT)
TRANSIENT THERMAL IMPEDANCE
(°C/W)
10
0
2 3 5 710
1
5.0
MAXIMUM POWER DISSIPATION
(THREE PHASE FULLWAVE RECTIFIED)
80
(W)
70
60
50
40
30
20
10
RESISTIVE, INDUCTIVE LOAD
POWER DISSIPATION
4.0
120°
90°
60°
θ=30°
3.0
2.0
1.0
0
10
–3
2 3 5 7 10
–2
2 3 5 7 10
–1
2 3 5 7 10
0
0
0
5
10
15
20
TIME (s)
DC OUTPUT CURRENT
(A)
LIMITING VALUE OF THE DC OUTPUT CURRENT
(THREE PHASE FULLWAVE RECTIFIED)
130
120
(°C)
CASE TEMPERATURE
110
100
90
80
70
60
50
40
30
0
5
10
15
20
θ=30°
60°
90° 120°
DC OUTPUT CURRENT
(A)
Feb.1999
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