TO-220F 12A Triac
TM1241S-R, TM1261S-R
s
Features
q
Repetitive peak off-state voltage: V
DRM
=400, 600V
q
RMS on-state current: I
T(RMS)
=12A
q
Gate trigger current: I
GT
=8mA max (MODE , ,
q
For resistive load
q
UL approved type available
External Dimensions
(Unit: mm)
φ
3.3
±
0.2
16.9
±
0.3
8.4
±
0.2
4.0
±
0.2
10.0
±
0.2
4.2
±
0.2
C 0.5
2.8
0.8
±
0.2
)
q
Isolation voltage: V
ISO
=1500V(50Hz Sine wave, RMS)
13.0 min
a
b
1.35
±
0.15
±
0.15
1.35
+
0.2
0.85
–
0.1
+
0.2
0.45 –
0.1
2.4
±
0.2
a. Part Number
b. Lot Number
3.9
±
0.2
2.54
2.2
±
0.2
2.54
(1). Terminal 1 (T
1
)
(2). Terminal 2 (T
2
)
(3). Gate (G)
(1) (2) (3)
Weight: Approx. 2.1g
sAbsolute
Maximum Ratings
Parameter
Repetitive peak off-state voltage
RMS on-state current
Surge on-state current
Peak gate voltage
Peak gate current
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Isolation voltage
Symbol
V
DRM
I
T(RMS)
I
TSM
V
GM
I
GM
P
GM
P
G(AV)
Tj
Tstg
V
ISO
Ratings
TM1241S-R
400
12
110
—
2
5
0.5
– 40 to
+
125
– 40 to
+
125
1500
TM1261S-R
600
Unit
V
A
A
V
A
W
W
°C
°C
Vrms
Conditions
Conduction angle 360°, Tc=84°C
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
50Hz Sine wave, RMS, Terminal to Case, 1 min.
sElectrical
Characteristics
Parameter
Off-state current
On-state voltage
(Tj=25°C, unless otherwise specified)
Symbol
I
DRM
V
TM
Ratings
min
typ
max
2.0
0.1
1.6
1.1
1.8
1.2
1.2
8
8
8
0.6
0.7
2.1
5
4.5
5
25
0.1
6
3.0
Unit
mA
V
Conditions
V
D
=V
DRM
, R
GK
=
∞
, Tj=125
°C
V
D
=V
DRM
, R
GK
=
∞
, Tj=25
°C
Pulse test, I
TM
=16A
T
2
, G
V
V
D
=6V,
R
L
=10Ω,
T
C
=25
°C
T
2
, G
T
2
, G
T
2
, G
+
+
–
–
–
–
+
+
+
–
Gate trigger voltage
V
GT
–
+
+
–
T
2
, G
mA
V
D
=6V,
R
L
=10Ω,
T
C
=25
°C
T
2
, G
T
2
, G
T
2
, G
V
mA
°C/W
V
D
=1/2×V
DRM
, Tj=125
°C
V
D
=6V
Junction to case
Gate trigger current
I
GT
–
+
Gate non-trigger voltage
Holding current
Thermal resistance
V
GD
I
H
Rth
58
TM1241S-R, TM1261S-R
v
T
–
i
T
Characteristics (max)
100
50
I
TSM
Ratings
120
Gate Characteristics
Tj= –20°C
Tj= –40°C
30
Surge on-state current I
TSM
(A)
i
T
(A)
10
Tj=125°C
80
60
v
GF
(V)
10 ms
1cycle
1
0
0
8
Tj=25°C
10
100
Initial junction temperature
Tj=125°C
I
TSM
Gate trigger voltage V
GT
(V)
12
3
2
10
On-state current
20
W
=5
P
GM
Gate voltage
5
Tj=25°C
Gate trigger current
I
GT
(mA)
6
1
0.5
40
4
2
0
0
1
2
3
See graph at the upper right
20
0
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1
5
10
50
100
On-state voltage
v
T
( V )
Number of cycle
Gate current
i
GF
(A)
I
T(RMS)
– P
T(AV)
Characteristics
18
I
T(RMS)
– Tc Ratings
150
Full-cycle sinewave
Conduction angle :360°
I
T(RMS)
– Ta Ratings
150
Full-cycle sinewave
Conduction angle : 360°
Self-supporting
Natural cooling
No wind
I
H
temperature Characteristics
(Typical)
50
(R
GK
=
∞
)
Average on-state power P
T(AV)
(W)
16
14
12
10
8
6
4
2
0
Full-cycle sinewave
Conduction angle :360°
Ambient temperature T
a
(°C)
125
125
100
Case temperature T
C
(°C)
100
Holding current I
H
(mA)
10
5
75
75
50
25
0
50
25
0
1
0.5
–40
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
0
0.5
1.0
1.5
2.0
2.5
3.0
0
25
50
75
100
125
RMS on-state current I
T (RMS)
(A)
RMS on-state current I
T (RMS)
(A)
RMS on-state current I
T (RMS)
(A)
Junction temperature Tj (°C)
Pulse trigger temperature Characteristics
(MODE – )
v
gt
(Typical)
(MODE – )
(MODE – )
)
)
trigger
V
GT
DC gateat 25°C
voltage
trigger
V
GT
DC gateat 25°C
voltage
trigger
V
GT
DC gateat 25°C
voltage
(
(
v
gt
(
Gate trigger voltage
)
at Ta and
t
w
v
gt
(
Gate trigger voltage
)
at Ta and
t
w
v
gt
(
Gate trigger voltage
)
at Ta and
t
w
(
1.5
v
gt
Ta= – 40°C
–20°C
t
w
0
°C
25
°C
50
°C
75
°C
100
°C
125
°C
1.5
Ta= – 40°C
v
gt
–20°C
t
w
0
°C
25
°C
50
°C
75
°C
100
°C
125
°C
)
2.0
2.0
2.0
Ta= – 40°C
v
gt
–20°C
t
w
0
°C
25
°C
50
°C
75
°C
100
°C
125
°C
1.5
1.0
1.0
1.0
0.5
0.5 1
10
100
1000
0.5
0.5 1
10
100
1000
0.5
0.5 1
10
100
1000
Pulse width
t
w (µs)
Pulse width
t
w (µs)
Pulse width
t
w (µs)
Pulse trigger temperature Characteristics
(MODE – )
30
trigger
I
GT
DC gateat 25°C
current
i
gt
(Typical)
(MODE – )
30
trigger
I
GT
DC gateat 25°C
current
(MODE – )
30
trigger
I
GT
DC gateat 25°C
current
i
gt
10
5
i
gt
(
Gate trigger current
)
at Ta and
t
w
i
gt
(
Gate trigger current
)
at Ta and
t
w
i
gt
(
Gate trigger current
)
at Ta and
t
w
t
w
Ta= – 40°C
–20°C
0
°C
25
°C
50
°C
75
°C
100
°C
125
°C
10
5
Ta= – 40°C
–20°C
t
w
0
°C
25
°C
50
°C
75
°C
100
°C
125
°C
i
gt
10
5
Ta= – 40°C
i
gt
–20°C
t
w
0
°C
25
°C
50
°C
75
°C
100
°C
125
°C
)
)
(
(
(
)
1
0.5
0.2
0.5 1
1
0.5
1
0.5
0.2
0.5 1
10
100
1000
0.2
0.5 1
10
100
1000
10
100
1000
Pulse width
t
w (µs)
Pulse width
t
w (µs)
Pulse width
t
w (µs)
V
GT
temperature characteristics
(Typical)
1.8
1.6
(V
D
=20V, R
L
=40Ω)
I
GT
temperature characteristics
(Typical)
50
(V
D
=20V, R
L
=40Ω)
Transient thermal resistance
Characteristics
100
r
th
(°C/W)
Gate trigger voltage V
GT
(V)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
–40
0
MO
DE
Gate trigger current I
GT
(mA)
Junction to
operating
environment
10
10
MOD
MOD
E
Transient thermal resistance
( T
2
+
,G
+
)
MODE
MODE
MODE
(T
2
–
, G
–
)
(T
2
+
, G
+
)
(T
2
+
, G
–
)
E
( T
2
–
,G
–
( T
2+
,G
–
)
)
5
Junction to
case
1
0.1
0.05
0.1
1
10
10
2
10
3
10
4
10
5
25
50
75
100
125
1
–40
0
25
50
75
100
125
Junction temperature Tj (°C)
Junction temperature Tj (°C)
t, Time (ms)
59
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