TO-3PF 12A Triac
TM1262B-R
s
Features
q
Repetitive peak off-state voltage: V
DRM
=600V
q
RMS on-state current: I
T(RMS)
=12A
q
Gate trigger current: I
GT
=8mA max (MODE , ,
q
Isolation voltage: V
ISO
=2000V(AC, 1min.)
q
For resistive load
q
UL approved type available
5.45
±
0.1
15.6
±
0.2
1.5 4.4 1.5
External Dimensions
(Unit: mm)
3.2
±
0.2
5.5
±
0.2
9.5
±
0.2
5.5
±
0.2
3.45
±
0.2
1.6
3.3
)
23
±
0.3
a
b
3.35
±
0.2
+
0.2
1.75 –
0.1
+
0.2
2.15 –
0.1
+
0.2
1.05 –
0.1
5.45
±
0.1
(16.2)
+
0.2
0.65 –
0.1
(1). Terminal 1 (T
1
)
(2). Terminal 2 (T
2
)
(3). Gate (G)
a. Part Number
b. Lot Number
(1) (2) (3)
Weight: Approx. 6.5g
sAbsolute
Maximum Ratings
Parameter
Repetitive peak off-state voltage
RMS on-state current
Surge on-state current
Peak gate current
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Isolation voltage
Symbol
V
DRM
I
T(RMS)
I
TSM
I
GM
P
GM
P
G(AV)
Tj
Tstg
V
ISO
Ratings
600
12
120
2
5
0.5
– 40 to
+
125
– 40 to
+
125
2000
Unit
V
A
A
A
W
W
°C
°C
Vrms
Conditions
R
GK
=
∞
, Tj= –40°C to +125°C
Conduction angle 360°, Tc=98°C
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
f
f
50Hz, duty
50Hz, duty
10%
10%
50Hz Sine wave, RMS, Terminal to Case, 1 min.
sElectrical
Characteristics
Parameter
Off-state current
On-state voltage
Symbol
I
DRM
V
TM
Ratings
min
typ
0.3
max
2.0
0.1
1.6
0.8
1.1
0.6
0.7
2.1
2.0
5.0
4.5
5.0
25
8.0
8.0
8.0
2.0
2.0
0.1
6
2.0
1.8
1.2
1.2
0.4
0.4
Unit
mA
V
Conditions
V
D
=V
DRM
, R
GK
=
∞
, Tj=125°C
V
D
=V
DRM
, R
GK
=
∞
, Tj=25°C
I
TM
=16A, T
C
=25°C
T
2
, G
V
V
D
=20V, R
L
=40Ω, T
C
=25°C
T
2
, G
T
2
, G
T
2
, G
+
+
–
–
–
–
+
+
+
–
Gate trigger voltage
V
GT
–
+
+
–
T
2
, G
mA
V
D
=20V, R
L
=40Ω, T
C
=25°C
T
2
, G
T
2
, G
T
2
, G
V
mA
°C/W
V
D
=1/2×V
DRM
, Tj=125
°C
Tj=25
°C
Junction to case
Gate trigger current
I
GT
–
+
Gate non-trigger voltage
Holding current
Thermal resistance
V
GD
I
H
Rth
60
TM1262B-R
v
T
–
i
T
Characteristics (max)
100
Surge on-state current I
TSM
(A)
I
TSM
Ratings
140
120
100
80
60
40
20
0
Initial junction temperature
Tj=125°C
I
TSM
10 ms
1cycle
I
T(RMS)
– P
T(AV)
Characteristics
14
Full-cycle sinewave
Average on-state power P
T(AV)
(W)
12
Conduction angle :360°
10
8
6
4
2
0
i
T
(A)
Tj =125°C
10
Tj =25°C
On-state current
1
0.1
0.4 0.8 1.2 1.6
2.0 2.4 2.8 3.2 3.6
1
5
10
50
100
0
2
4
6
8
10
12
On-state voltage
v
T
( V )
Number of cycle
RMS on-state current I
T (RMS)
(A)
I
T(RMS)
– Tc Ratings
150
Full-cycle sinewave
Conduction angle :360°
Gate Characteristics
50
Mode
V
GM
=10V
P
GM
=5W
25°C V
GT1
=1.8V
– 40°C V
GT1
=2.2V
P
G(AV)
=0.5W
–40°C V
GT2,3
=1.5V
–40°C I
GT
=25mA
V
GT
temperature characteristics
(Typical)
2.4
2.0
1.6
1.2
0.8
0.4
0
–40
(V
D
=20V R
L
=40
Ω)
Mode
Gate trigger voltage V
GT
(V)
Case temperature T
C
(°C)
125
100
75
50
25
0
0
2
4
6
8
10
12
14
RMS on-state current I
T (RMS)
(A)
v
GF
(V)
Gate voltage
10
5
25°C
5 V =1.2V
GT2.3
0.1 V
GD
=0.1V
1
10
25°C I
GT
=8mA
100
1000
I
GM
=2A
5000
1
0
25
50
75
100
125
Gate current
i
GF
(mA)
Junction temperature Tj (°C)
V
GT
(Mode
(Typical)
2.4
2.0
1.6
1.2
0.8
0.4
0
–40
) temperature characteristics
(V
D
=20V R
L
=40
Ω)
I
GT
temperature characteristics
(Typical)
50
Gate trigger current IGT (mA)
(V
D
=20V R
L
=40
Ω)
I
H
temperature characteristics
(Typical)
50
(R
G-K
=1kΩ)
Gate trigger voltage V
GT
(V)
10
5
Holding current I
H
(mA)
0
25
50
75
100
125
10
5
1
0.5
–40
1
0.5
–40
0
25
50
75
100
125
0
25
50
75
100
125
Junction temperature Tj (°C)
Junction temperature Tj (°C)
Junction temperature Tj (°C)
I
L
temperature characteristics
(Typical)
1000
(R
G-K
=
∞
)
r
th( j-c)
– t
Characteristics
Transient thermal resistance
r
th (j-c)
(°C/W)
5
Latching current I
L
(mA)
100
10
1
1
–40
0
25
50
75
100
125
0.5
1
10
10
2
10
3
10
4
10
5
Junction temperature Tj (°C)
t, Time (ms)
61
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