MITSUBISHI THYRISTOR MODULES
TM20DA-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
TM20DA-M,-H
•
I
T (AV)
•
V
RRM
•
•
•
•
Average on-state current ............
20A
Repetitive peak reverse voltage
........
400/800V
V
DRM
Repetitive peak off-state voltage
........
400/800V
DOUBLE ARMS
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC motor control, NC equipment, AC motor control, Contactless switches,
Electric furnace temperature control, Light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
60
47.6
2–φ5.5
A
1
A
1
A
2
A
2
CR
2
G
2
18
32
13
CR
1
G
1
K
1
G
1
8.5
15
36
K
1
K
2
K
2
G
2
4–M4
Tab#110, t=0.5
11
LABEL
16.5
2.0
24.5
30
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM20DA-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Voltage class
M
400
480
320
400
480
320
H
800
960
640
800
960
640
Unit
V
V
V
V
V
V
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
V
iso
Parameter
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
I
2t
for fusing
Conditions
Ratings
30
Unit
A
A
A
A
2
s
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Single-phase, half-wave 180° conduction, T
C
=87°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
V
D
=1/2V
DRM
, I
G
=0.5A, T
j
=125°C
20
400
6.7
×
10
2
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
100
5.0
0.5
10
5.0
2.0
–40~+125
–40~+125
Charged part to case
Main terminal screw M4
2500
0.98~1.47
10~15
1.47~2.45
15~25
80
—
Mounting torque
Mounting screw M5
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Limits
Symbol
I
RRM
I
DRM
V
TM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
—
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
T
j
=125°C, V
RRM
applied
T
j
=125°C, V
DRM
applied
T
j
=125°C, I
TM
=60A, instantaneous meas.
T
j
=125°C, V
D
=2/3V
DRM
T
j
=25°C, V
D
=6V, R
L
=2Ω
T
j
=125°C, V
D
=1/2V
DRM
T
j
=25°C, V
D
=6V, R
L
=2Ω
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Test conditions
Min.
—
—
—
500
—
0.25
10
—
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
4.0
4.0
1.8
—
3.0
—
50
1.0
0.25
—
Unit
mA
mA
V
V/µs
V
V
mA
°C/
W
°C/
W
MΩ
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM20DA-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
–1
0.5
500
T
j
=125°C
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
SURGE (NON-REPETITIVE)
ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
400
300
200
100
1.5
2.5
3.5
4.5
0
1
2 3
5 7 10
20 30
50 70100
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
10
0
2 3 5 7 10
1
1.0
GATE CHARACTERISTICS
4
3
2
V
FGM
=10V
10
1
P
GM
=5.0W
7
V
GT
=3.0V
5
P
G(AV)
=
3
0.50W
2
I
GT
=
10
0
50mA
7
5 T
j
=
25°C
3
2
V
GD
=0.25V
10
–1
7
5
410
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
TRANSIENT THERMAL IMPEDANCE
(°C/W)
0.8
GATE VOLTAGE (V)
I
FGM
=2.0A
0.6
0.4
0.2
0
10
–3
2 3 5 710
–2
2 3 5 7 10
–1
2 3 5 7 10
0
GATE CURRENT (mA)
TIME (s)
40
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
PER SINGLE
ELEMENT
60°
180°
120°
AVERAGE ON-STATE POWER
DISSIPATION (W)
35
30
25
20
15
10
5
0
0
90°
CASE TEMPERATURE (°C)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(SINGLE PHASE HALFWAVE)
130
PER SINGLE
ELEMENT
120
θ
360°
110
100
90
80
70
60
θ=30°
60° 90° 120° 180°
θ=30°
RESISTIVE,
INDUCTIVE
LOAD
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
5
10
15
20
50
0
5
10
15
20
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM20DA-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
40
AVERAGE ON-STATE POWER
DISSIPATION (W)
35
30
25
20
15
10
5
0
0
CASE TEMPERATURE (°C)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(RECTANGULAR WAVE)
270° DC
180°
120°
90°
60°
θ=30°
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
5
10
15
20
25
30
35
40
130
120
110
100
90
80
70
60
50
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(RECTANGULAR WAVE)
PER SINGLE
ELEMENT
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
θ=30°
60°
90° 180°
120° 270°
DC
0
5
10
15
20
25
30
35
40
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
80
70
AVERAGE ON-STATE
POWER DISSIPATION (W)
60
50
40
30
20
10
0
0
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE FULLWAVE AC)
θ
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
θ=180°
CASE TEMPERATURE (°C)
90°
60°
30°
130
125
120
115
110
105
100
95
90
85
50
80
0
LIMITING VALUE OF THE RMS
ON-STATE CURRENT
(SINGLE PHASE FULLWAVE AC)
PER SINGLE
MODULE
θ=30°
60°,90°
θ
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
10
20
30
40
50
180°
PER SINGLE
MODULE
10
20
30
40
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
MAXIMUM ON-STATE POWER DISSIPATION
(SINGLE PHASE FULLWAVE RECTIFIED)
ON-STATE POWER DISSIPATION (W)
(PER SINGLE MODULE)
80
70
60
60°
50
40
30
20
10
0
0
5
10
15
20
θ θ
360°
RESISTIVE,
INDUCTIVE
LOAD
25 30 35 40
θ=30°
90°
CASE TEMPERATURE (°C)
(PER SINGLE MODULE)
180°
120°
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(SINGLE PHASE FULLWAVE RECTIFIED)
130
120
110
100
90
80
70
60
50
0
5
θ θ
360°
RESISTIVE,
INDUCTIVE
LOAD
θ=30°
60° 90° 120° 180°
10
15
20
25
30
35
40
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM20DA-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM ON-STATE POWER DISSIPATION
(THREE PHASE FULLWAVE RECTIFIED)
ON-STATE POWER DISSIPATION (W)
(PER SINGLE MODULE)
80
70
60
50
40
30
20
10
0
0
10
20
30
40
θ=30°
90°
60°
CASE TEMPERATURE (°C)
(PER SINGLE MODULE)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(THREE PHASE FULLWAVE RECTIFIED)
130
120°
120
110
100
90
80
70
60
80
50
0
10
20
30
40
θ=30°
60° 90°
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
50
60
70
120°
50
60
70
80
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
Feb.1999
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
