MITSUBISHI THYRISTOR MODULES
TM25RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
TM25RZ/EZ-M,-H
•
I
T (AV)
•
I
F (AV)
•
V
RRM
•
•
•
•
Average on-state current ............
25A
Average forward current ............
25A
Repetitive peak reverse voltage
........
400/800V
V
DRM
Repetitive peak off-state voltage
........
400/800V
MIX DOUBLE ARMS
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC motor control, NC equipment, AC motor control, contactless switches,
electric furnace temperature control, light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
93.5
80
2–φ6.5
(RZ)
12.5
26
A
1
K
2
CR
K
1
SR
A
2
K
1
G
1
K1 G1
17.5
20
20
3–M5
Tab#110, t=0.5
(EZ)
A
1
CR
K
1
K
2
SR
A
2
K
1
G
1
9
6.5
LABEL
21
30
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM25RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Voltage class
M
400
480
320
400
480
320
H
800
960
640
800
960
640
Unit
V
V
V
V
V
V
Symbol
I
T (RMS)
, I
F (RMS)
I
T (AV)
, I
F (AV)
I
TSM
, I
FSM
I
2t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
V
iso
Parameter
RMS current
Average current
Surge (non-repetitive) current
I
2t
for fusing
Conditions
Ratings
39
Unit
A
A
A
A
2
s
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Single-phase, half-wave 180° conduction, T
C
=93°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
V
D
=1/2V
DRM
, I
G
=0.5A, T
j
=125°C
25
500
1.0
×
10
3
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
100
5.0
0.5
10
5.0
2.0
–40~125
–40~125
Charged part to case
Main terminal screw M5
2500
1.47~1.96
15~20
1.96~2.94
20~30
160
—
Mounting torque
Mounting screw M6
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Limits
Symbol
I
RRM
I
DRM
V
TM
, V
FM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
—
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
Foward voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
T
j
=125°C, V
RRM
applied
T
j
=125°C, V
DRM
applied
T
j
=125°C, I
TM
=I
FM
=75A, instantaneous meas.
T
j
=125°C, V
D
=2/3V
DRM
T
j
=25°C, V
D
=6V, R
L
=2Ω
T
j
=125°C, V
D
=1/2V
DRM
T
j
=25°C, V
D
=6V, R
L
=2Ω
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Test conditions
Min.
—
—
—
500
—
0.25
10
—
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
4.0
4.0
1.5
—
3.0
—
50
0.8
0.2
—
Unit
mA
mA
V
V/µs
V
V
mA
°C/
W
°C/
W
MΩ
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM25RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM RATINGS
Item
Thyristor
Diode
—
—
—
—
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
I
T (RMS)
I
F (RMS)
I
T (AV)
I
F (AV)
I
TSM
I
FSM
I
2t
di/dt
Item
Thyristor
Diode
P
GM
PG
(AV)
V
FGM
I
FGM
T
j
T
stg
—
—
—
—
ELECTRICAL CHARACTERISTICS
Item
Thyristor
Diode
—
—
—
—
—
I
RRM
I
DRM
V
TM
V
FM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC
10
3
7
5
3
2
CURRENT (A)
10
2
7
5
3
2
10
1
7
5
3
2
10
0
0.6
500
T
j
=125°C
SURGE (NON-REPETITIVE)
CURRENT (A)
400
RATED SURGE (NON-REPETITIVE)
CURRENT
300
200
100
1.0
1.4
1.8
2.2
2.6
0
1
2 3
5 7 10
20 30
50 70100
FORWARD VOLTAGE (V)
CONDUCTION TIME (CYCLE AT 60Hz)
GATE CHARACTERISTICS
4
3
2
10
1
GATE VOLTAGE (V)
V
FGM
=10V
TRANSIENT THERMAL IMPEDANCE
(°C/W)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
10
0
2 3 5 7 10
1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
10
–3
2 3 5 7 10
–2
2 3 5 7 10
–1
2 3 5 7 10
0
TIME (s)
P
GM
=5.0W
7
V
GT
=3.0V
5
P
G(AV)
=
3
0.50W
2
I
GT
=
10
0
50mA
7
5 T
j
=
25°C
3
2
V
GD
=0.25V
10
–1
7
5
410
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
GATE CURRENT (mA)
I
FGM
=2.0A
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM25RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
40
AVERAGE POWER DISSIPATION (W)
35
30
25
20
15
10
5
0
0
MAXIMUM AVERAGE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
180°
CASE TEMPERATURE (°C)
θ
360°
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE ELEMENT
LIMITING VALUE OF THE AVERAGE
CURRENT (SINGLE PHASE HALFWAVE)
130
θ
360°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE
ELEMENT
120°
90°
60°
120
110
θ=30°
100
90
θ=30°
60°
90° 120° 180°
5
10
15
20
25
80
0
5
10
15
20
25
AVERAGE CURRENT (A)
AVERAGE CURRENT (A)
MAXIMUM AVERAGE POWER
DISSIPATION (RECTANGULAR WAVE)
50
AVERAGE POWER DISSIPATION (W)
270°
40
180°
120°
90°
60°
20
θ=30°
θ
360°
RESISTIVE, INDUCTIVE LOAD
PER SINGLE ELEMENT
LIMITING VALUE OF THE AVERAGE
CURRENT (RECTANGULAR WAVE)
130
120
CASE TEMPERATURE (°C)
110
100
90
80
70
60
θ=30°
60° 90°
180° 270°
120°
25
30
DC
θ
360°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE
ELEMENT
DC
30
10
0
0
5
10
15
20
25
30
35
40
50
0
5
10
15
20
35
40
AVERAGE CURRENT (A)
AVERAGE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(REVERSE-PARALLEL CONNECTION,
THREE-PHASE THREE-LINE CONNECTION)
80
AVERAGE POWER DISSIPATION (W)
70
60
50
40
30
20
10
0
0
10
20
30
40
50
60
70
80
θ
360°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE MODULE
LIMITING VALUE OF THE RMS CURRENT
(REVERSE-PARALLEL CONNECTION,
THREE-PHASE THREE-LINE CONNECTION)
130
125
CASE TEMPERATURE (°C)
120
115
110
105
100
95
90
85
80
θ
360°
RESISTIVE, INDUCTIVE LOAD
PER SINGLE MODULE
θ
θ=180°
90°
60°
30°
θ=30°,60°,90°
180°
θ
0
10
20
30
40
50
60
70
80
RMS CURRENT (A)
RMS CURRENT (A)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM25RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM POWER DISSIPATION
(SINGLE PHASE FULLWAVE RECTIFIED)
80
70
POWER DISSIPATION (W)
(PER SINGLE MODULE)
60
50
40
30
20
10
0
0
10
20
30
θ θ
360°
RESISTIVE, INDUCTIVE
LOAD
LIMITING VALUE OF
THE DC OUTPUT CURRENT
(SINGLE PHASE FULLWAVE RECTIFIED)
130
125
CASE TEMPERATURE (°C)
(PER SINGLE MODULE)
120
115
110
105
100
95
90
85
80
0
10
20
30
40
50
θ=30°
60°
90° 120° 180°
θ θ
360°
RESISTIVE,
INDUCTIVE
LOAD
180°
120°
90°
60°
θ=30°
40
50
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
MAXIMUM POWER DISSIPATION
(THREE-PHASE FULLWAVE RECTIFIED)
80
70
POWER DISSIPATION (W)
(PER SINGLE MODULE)
60
50
40
30
20
10
0
0
10
20
30
40
θ
360°
RESISTIVE, INDUCTIVE
LOAD
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(THREE-PHASE FULLWAVE RECTIFIED)
130
125
CASE TEMPERATURE (°C)
(PER SINGLE MODULE)
120
115
110
105
100
95
90
85
80
0
10
20
30
40
50
60
70
80
θ=30°
60° 90° 120°
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
120°
90°
60°
θ=30°
50
60
70
80
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
Feb.1999
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