MITSUBISHI THYRISTOR MODULES
TM25T3A-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
TM25T3A-M,-H
•
I
O
•
V
RRM
•
•
•
•
DC output current ......................
60A
Repetitive peak reverse voltage
........
400/800V
V
DRM
Repetitive peak off-state voltage
........
400/800V
3 Phase Mix Bridge
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC motor control, NC equipment, AC motor control, contactless switches,
electric furnace temperature control, light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
31
27
KT
GT
KS
GS
KR
GR
R
20
KR
S
P
62
45
KS
GR
KT
GS
P
GT
R
S
T
N
20
T
N
62
4–φ5.5
74
86
5–M5
Tab#110, t=0.5
31
6
22
LABEL
7
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM25T3A-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Voltage class
M
400
480
320
400
480
320
H
800
960
640
800
960
640
Unit
V
V
V
V
V
V
Symbol
I
O
I
TSM
, I
FSM
I
2t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
V
iso
Parameter
DC output current
Surge (non-repetitive) current
I
2t
for fusing
Conditions
3-phase fullwave rectified, TC=76.6°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
V
D
=1/2V
DRM
, I
G
=0.5A, T
j
=125°C
Ratings
60
500
1.0 x
10
3
Unit
A
A
A
2
s
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
100
5.0
0.5
10
5.0
2.0
–40~125
–40~125
Charged part to case
Main terminal screw M5
2500
1.47~1.96
15~20
1.47~1.96
15~20
310
—
Mounting torque
Mounting screw M5
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Limits
Symbol
I
RRM
I
DRM
V
TM
, V
FM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
—
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
Forward voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
T
j
=125°C, V
RRM
applied
T
j
=125°C, V
DRM
applied
T
j
=125°C, I
TM
=I
FM
=75A, instantaneous meas.
T
j
=125°C, V
D
=2/3V
DRM
T
j
=25°C, V
D
=6V, R
L
=2Ω
T
j
=125°C, V
D
=1/2V
DRM
T
j
=25°C, V
D
=6V, R
L
=2Ω
Junction to case (per 1/6 module)
Case to fin, Conductive grease applied (per 1/6 module)
Measured with a 500V megohmmeter between main terminal
and case
Test conditions
Min.
—
—
—
500
—
0.25
10
—
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
4.0
4.0
1.4
—
2.0
—
50
1.5
0.36
—
Unit
mA
mA
V
V/µs
V
V
mA
°C/
W
°C/
W
MΩ
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM25T3A-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM RATINGS
Item
Thyristor
Diode
—
—
—
—
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
I
T (RMS)
I
F (RMS)
I
T (AV)
I
F (AV)
I
TSM
I
FSM
I
2t
di/dt
Item
Thyristor
Diode
P
GM
P
G (AV)
V
FGM
I
FGM
T
j
T
stg
—
—
—
—
ELECTRICAL CHARACTERISTICS
Item
Thyristor
Diode
—
—
—
—
—
I
RRM
I
DRM
V
TM
V
FM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC
10
3
7
5
3
2
CURRENT (A)
10
2
7
5
3
2
10
1
7
5
3
2
10
0
0.5
500
SURGE (NON-REPETITIVE)
CURRENT (A)
T
j
=125°C
RATED SURGE (NON-REPETITIVE)
CURRENT
400
300
200
100
1.0
1.5
2.0
(V)
2.5
0
1
2 3
5 7 10
20 30
50 70100
FORWARD VOLTAGE
CONDUCTION TIME
(CYCLE AT 60Hz)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM25T3A-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
(PER SINGLE ELEMENT)
TRANSIENT THERMAL IMPEDANCE
(°C/W)
10
0
2 3 5 710
1
2.0
(W)
MAXIMUM POWER DISSIPATION
(THREE PHASE FULLWAVE RECTIFIED)
200
175
150
125
100
75
50
25
θ=30°
RESISTIVE,
INDUCTIVE
LOAD
90° 120°
60°
1.2
0.8
POWER DISSIPATION
1.6
0.4
0
10
–3
2 3 5 710
–2
2 3 5 7 10
–1
2 3 5 7 10
0
TIME (s)
θ
360°
0
10
20
30
40
50
60
70
(A)
80
0
DC OUTPUT CURRENT
LIMITING VALUE OF THE DC OUTPUT CURRENT
(THREE PHASE FULLWAVE RECTIFIED)
140
(°C)
130
120
110
100
90
80
70
60
0
10
20
30
40
50
60
70
(A)
80
θ=30°
60° 90° 120°
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
CASE TEMPERATURE
DC OUTPUT CURRENT
Feb.1999
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
