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JAN1N6643

产品描述Rectifier Diode, 1 Element, 0.3A, 75V V(RRM),
产品类别分立半导体    二极管   
文件大小395KB,共26页
制造商Aeroflex Metelics / Hi-Rel Components
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JAN1N6643概述

Rectifier Diode, 1 Element, 0.3A, 75V V(RRM),

JAN1N6643规格参数

参数名称属性值
厂商名称Aeroflex Metelics / Hi-Rel Components
Reach Compliance Codeunknown
ECCN代码EAR99
配置SINGLE
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.2 V
元件数量1
最高工作温度200 °C
最大输出电流0.3 A
最大重复峰值反向电压75 V
表面贴装NO

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The documentation and process conversion measures
necessary to comply with this document shall be
completed by 24 September 2013.
INCH-POUND
MIL-PRF-19500/578M
24 June 2013
SUPERSEDING
MIL-PRF-19500/578L
19 October 2010
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, 1N6638, 1N6642, 1N6643,
1N6638U, 1N6642U, 1N6643U, 1N6638US, 1N6642US, 1N6643US, 1N6642UB, 1N6642UB2,
1N6642UB2R, 1N6642UBCA, 1N6642UBD, 1N6642UBCC, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
The JANS1N4148-1 is no longer qualified and is superseded by JANS1N6642. See
6.4.
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein
shall consist of this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for switching diodes. Four levels of product
assurance are provided for each device type as specified in MIL-PRF-19500.
* 1.2 Physical dimensions. See figures 1 (DO-35), 2 (U, US), 3 (UB), 4 (UB2), 5, and 6.
1.3 Maximum ratings. Unless otherwise specified T
A
= +25°C.
VBR
Types
VRWM IO(PCB)
TA=75
°
(1) (2)
V (pk) V (pk)
1N6638
1N6638U, 1N6638US
1N6642
1N6642U, 1N6642US
1N6642UB, 1N6642UB2,
1N6642UB2R, 1N6642UBCA,
1N6642UBD, 1N6642UBCC
1N6643
1N6643U, 1N6643US
150
150
100
100
100
75
75
125
125
75
75
75
50
50
mA
300
300
300
300
300
300
300
IFSM
tp =
1/120 s
RθJL
L=
.375 inch
(9.53 mm)
(1) (2)
RθJEC
L=0
(1)
RθJA(PCB)
(2)
RθJSP
(1) (3)
TSTG
& TJ
A (pk)
2.5
2.5
2.5
2.5
2.5
2.5
2.5
°
C/W
150
°
C/W
40
°
C/W
250
250
250
250
325
°
C/W
°
C
-65 to +175
-65 to +175
-65 to +175
-65 to +175
150
40
100
-65 to +200
-65 to +175
-65 to +175
150
40
250
250
* (1)
* (2)
(3)
For temperature-current derating curves, see figures 7 and 8.
See figures 9, 10, 11, and 13 for thermal impedance curves. T
A
= +75°C for both axial and Metal Electrode
Leadless Face diodes (MELF) (U, US) on printed circuit board (PCB), PCB = FR4 - .0625 inch (1.59 mm)
1-layer 1-Oz Cu, horizontal, in still air; pads for U, US = .061 inch (1.55 mm) x .105 inch (2.67 mm); pads for axial
= .092 inch (2.34 mm) diameter, strip = .030 inch (0.76 mm) x 1 inch (25.4 mm) long, lead length L ≤ .187 inch
(≤ 4.75 mm); RθJA with a defined PCB thermal resistance condition included, is measured at IO = 300 mA dc.
RθJSP refers to thermal resistance from junction to the solder pads of the UB package.
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@.dla.mil.
Since
contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at
https://assist.dla.mil
.
AMSC N/A
FSC 5961
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