MITSUBISHI THYRISTOR MODULES
TM90RZ/EZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
TM90RZ/EZ-M,-H
•
I
T (AV)
•
I
F (AV)
•
V
RRM
•
•
•
•
Average on-state current ............
90A
Average forward current ............
90A
Repetitive peak reverse voltage
........
400/800V
V
DRM
Repetitive peak off-state voltage
........
400/800V
MIX DOUBLE ARMS
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC motor control, NC equipment, AC motor control, contactless switches,
electric furnace temperature control, light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
93.5
80
2–φ6.5
(RZ)
12.5
26
A
1
K
2
CR
K
1
SR
A
2
K
1
G
1
K1 G1
17.5
20
20
3–M5
Tab#110, t=0.5
(EZ)
A
1
CR
K
1
K
2
SR
A
2
K
1
G
1
9
6.5
LABEL
21
30
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM90RZ/EZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Voltage class
M
400
480
320
400
480
320
H
800
960
640
800
960
640
Unit
V
V
V
V
V
V
Symbol
I
T (RMS)
, I
F (RMS)
I
T (AV)
, I
F (AV)
I
TSM
, I
FSM
I
2t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
V
iso
Parameter
RMS current
Average current
Surge (non-repetitive) current
I
2t
for fusing
Conditions
Ratings
140
Unit
A
A
A
A
2
s
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Single-phase, half-wave 180° conduction, T
C
=86°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
V
D
=1/2V
DRM
, I
G
=1.0A, T
j
=125°C
90
1800
1.4
×
10
4
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
100
5.0
0.5
10
5.0
2.0
–40~125
–40~125
Charged part to case
Main terminal screw M5
2500
1.47~1.96
15~20
1.96~2.94
20~30
160
—
Mounting torque
Mounting screw M6
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Limits
Symbol
I
RRM
I
DRM
V
TM
, V
FM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
—
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
Forward voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
T
j
=125°C, V
RRM
applied
T
j
=125°C, V
DRM
applied
T
j
=125°C, I
TM
=I
FM
=270A, instantaneous meas.
T
j
=125°C, V
D
=2/3V
DRM
T
j
=25°C, V
D
=6V, R
L
=2Ω
T
j
=125°C, V
D
=1/2V
DRM
T
j
=25°C, V
D
=6V, R
L
=2Ω
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Test conditions
Min.
—
—
—
500
—
0.25
15
—
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
15
15
1.3
—
3.0
—
100
0.3
0.2
—
Unit
mA
mA
V
V/µs
V
V
mA
°C/
W
°C/
W
MΩ
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM90RZ/EZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM RATINGS
Item
Thyristor
Diode
—
—
—
—
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
I
T (RMS)
I
F (RMS)
I
T (AV)
I
F (AV)
I
TSM
I
FSM
I
2t
di/dt
Item
Thyristor
Diode
P
GM
PG
(AV)
V
FGM
I
FGM
T
j
T
stg
—
—
—
—
ELECTRICAL CHARACTERISTICS
Item
Thyristor
Diode
—
—
—
—
—
I
RRM
I
DRM
V
TM
V
FM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC
10
3
7 T
j
=125°C
5
3
2
CURRENT (A)
10
2
7
5
3
2
10
1
7
5
3
2
10
0
0.4
2000
SURGE (NON-REPETITIVE)
CURRENT (A)
RATED SURGE (NON-REPETITIVE)
CURRENT
1600
1200
800
400
0.8
1.2
1.6
2.0
2.4
0
1
2 3
5 7 10
20 30
50 70100
FORWARD VOLTAGE (V)
CONDUCTION TIME (CYCLE AT 60Hz)
GATE CHARACTERISTICS
4
3
2
GATE VOLTAGE (V)
V
FGM
=10V
TRANSIENT THERMAL IMPEDANCE
(°C/W)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
10
0
2 3 5 7 10
1
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
10
–3
2 3 5 710
–2
2 3 5 7 10
–1
2 3 5 7 10
0
TIME (s)
10
1
P
GM
=5.0W
7
V
GT
=3.0V
5
P
G(AV)
=
3
0.50W
2
I
GT
=
10
0
100mA
7
5
T
j
=25°C
3
2
V
GD
=0.25V
10
–1
7
5
410
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
GATE CURRENT (mA)
I
FGM
=2.0A
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM90RZ/EZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM AVERAGE POWER
DISSIPATION (SINGLE PHASE HALFWAVE)
AVERAGE POWER DISSIPATION (W)
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100
θ=30°
CASE TEMPERATURE (°C)
θ
360°
180°
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE ELEMENT
LIMITING VALUE OF THE AVERAGE
CURRENT (SINGLE PHASE HALFWAVE)
130
120
110
100
90
80
70
60
50
0
20
40
60
80
100
θ=30°
60° 90° 120° 180°
θ
360°
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE
ELEMENT
120°
90°
60°
AVERAGE CURRENT (A)
AVERAGE CURRENT (A)
AVERAGE POWER DISSIPATION (W)
160
140
120
100
80
60
40
20
0
0
20
MAXIMUM AVERAGE
POWER DISSIPATION
(RECTANGULAR WAVE)
DC
270°
180°
120°
90°
60°
θ=30°
θ
360°
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE ELEMENT
LIMITING VALUE OF THE AVERAGE
CURRENT (RECTANGULAR WAVE)
130
120
CASE TEMPERATURE (°C)
110
100
90
80
70
60
50
0
θ=30°
60° 90° 180° 270° DC
120°
θ
360°
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE
ELEMENT
40
60
80 100 120 140 160
20
40
60
80 100 120 140 160
AVERAGE CURRENT (A)
AVERAGE CURRENT (A)
AVERAGE POWER DISSIPATION (W)
160
CASE TEMPERATURE (°C)
θ
360°
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE MODULE
θ
=
18
12
0°
60
90
0°
°
°
MAXIMUM AVERAGE POWER DISSIPATION
(REVERSE-PARALLEL CONNECTION,
THREE-PHASE THREE-LINE CONNECTION)
200
θ
LIMITING VALUE OF THE RMS CURRENT
(REVERSE-PARALLEL CONNECTION,
THREE-PHASE THREE-LINE CONNECTION)
130
120
θ=30°
60°
90°
120°
180°
120
°
30
110
θ
θ
360°
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE MODULE
80
100
40
90
0
0
40
80
120
160
200
80
0
40
80
120
160
200
RMS CURRENT (A)
RMS CURRENT (A)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM90RZ/EZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM POWER DISSIPATION
(SINGLE PHASE FULLWAVE RECTIFIED)
320
280
POWER DISSIPATION (W)
(PER SINGLE MODULE)
240
200
160
120
80
40
0
0
40
80
120
160
200
θ=30°
CASE TEMPERATURE (°C)
(PER SINGLE MODULE)
θ θ
360°
RESISTIVE,
INDUCTIVE
LOAD
LIMITING VALUE OF
THE DC OUTPUT CURRENT
(SINGLE PHASE FULLWAVE RECTIFIED)
130
θ θ
360°
RESISTIVE,
INDUCTIVE
LOAD
120
180°
120°
60°
90°
110
100
90
θ=30°
0
40
60° 90° 120° 180°
80
120
160
200
80
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
MAXIMUM POWER DISSIPATION
(THREE-PHASE FULLWAVE RECTIFIED)
200
POWER DISSIPATION (W)
(PER SINGLE MODULE)
60°
θ=30°
120
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(THREE-PHASE FULLWAVE RECTIFIED)
90° 120°
CASE TEMPERATURE (°C)
(PER SINGLE MODULE)
130
120
110
100
90
80
70
60
50
160
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
80
θ=30°
60° 90° 120°
40
0
0
40
80 120 160 200 240 280 320
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
0
40
80 120 160 200 240 280 320
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
Feb.1999
Microchip MCU
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