®
TMMBAT 46
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
General purpose, metal to silicon diode featuring
high breakdown voltage low turn-on voltage.
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
F
I
FRM
I
FSM
P
tot
T
stg
T
j
T
L
Parameter
Repetitive Peak Reverse Voltage
Forward Continuous Current
Repetitive Peak Fordware Current
Surge non Repetitive Forward Current
Power Dissipation
Storage and Junction Temperature Range
Maximum Temperature for Soldering during 15s
T
l
= 25
°C
t
p
≤
1s
δ ≤
0.5
t
p
= 10ms
T
l
= 80
°C
MINIMELF
(Glass)
Value
100
150
350
750
150
- 65 to + 150
- 65 to + 125
260
Unit
V
mA
mA
mA
mW
°C
°C
°C
THERMAL RESISTANCE
Symbol
R
th(j-l)
Junction-leads
Test Conditions
Value
300
Unit
°C/W
August 1999 Ed: 1A
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TMMBAT 46
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
V
BR
V
F
*
T
j
= 25°C
T
j
= 25°C
T
j
= 25°C
T
j
= 25°C
I
R
*
T
j
= 25°C
T
j
= 60°C
T
j
= 25°C
T
j
= 60°C
T
j
= 25°C
T
j
= 60°C
T
j
= 25°C
T
j
= 60°C
V
R
= 75V
V
R
= 50V
V
R
= 10V
Test Conditions
I
R
= 100µA
I
F
= 0.1mA
I
F
= 10mA
I
F
= 250mA
V
R
= 1.5V
Min.
100
0.25
0.45
1
0.5
5
0.8
7.5
2
15
5
20
µA
Typ.
Max.
Unit
V
V
DYNAMIC CHARACTERISTICS
Symbol
C
T
j
= 25°C
T
j
= 25°C
* Pulse test: t
p
≤
300µs
δ <
2%.
Test Conditions
V
R
= 0V
V
R
= 1V
f = 1MHz
Min.
Typ.
10
6
Max.
Unit
pF
Figure 1. Forward current versus forward
voltage at different temperatures (typical
values).
Figure 2. Forward current versus forward
voltage (typical values).
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TMMBAT 46
Figure 3. Reverse current versus junction
temperature (typical values).
Figure 4. Reverse current versus continuous
reverse voltage.
Figure 5. Forward current versus forward
voltage (typical values).
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TMMBAT 46
PACKAGE MECHANICAL DATA
MINIMELF Glass
DIMENSIONS
A
REF.
Millimeters
Min.
Typ.
3.40
1.60
0.45
1.50
Max.
3.6
1.62
0.50
Min.
0.130
0.063
0.016
Inches
Typ.
0.134
0.063
0.018
0.059
Max.
0.142
0.064
0.020
/
O
B
A
B
3.30
1.59
0.40
C
C
C
D
FOOT PRINT DIMENSIONS (Millimeter)
2
2.5
5
Marking: ring at cathode end.
Weight: 0.05g
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval
of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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