®
TMMBAT 47
TMMBAT 48
SMALL SIGNAL SCHOTTKY DIODES
DESCRIPTION
General purpose, metal to silicon diodes featuring
very low turn-on voltage and fast switching.
These devices have integrated protection against
excessive voltage such as electrostatic discharges.
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
F
I
FRM
I
FSM
Parameter
Repetitive Peak Reverse Voltage
Forward Continuous Current
Repetitive Peak Fordward Current
Surge non Repetitive Forward Current
T
l
= 25
°C
t
p
≤
1s
δ ≤
0.5
t
p
= 10ms
t
p
= 1s
P
tot
T
stg
T
j
T
L
Power Dissipation
Storage and Junction Temperature Range
Maximum Temperature for Soldering during 15s
T
l
= 25
°C
MINIMELF
(Glass)
TMMBAT47
20
TMMBAT48
40
Unit
V
mA
A
A
350
1
7.5
1.5
330
- 65 to 150
- 65 to 125
260
mW
°C
°C
°C
THERMAL RESISTANCE
Symbol
R
th(j-l)
Junction-leads
Test Conditions
Value
300
Unit
°C/W
August 1999 Ed: 1A
1/5
TMMBAT 47/TMMBAT 48
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
V
BR
T
j
= 25°C
T
j
= 25°C
V
F
*
T
j
= 25°C
T
j
= 25°C
T
j
= 25°C
T
j
= 25°C
T
j
= 25°C
T
j
= 25°C
T
j
= 25°C
T
j
= 25°C
T
j
= 25°C
I
R
*
T
j
= 25°C
T
j
= 60°C
T
j
= 25°C
T
j
= 60°C
T
j
= 25°C
T
j
= 60°C
T
j
= 25°C
T
j
= 60°C
T
j
= 25°C
T
j
= 60°C
T
j
= 25°C
T
j
= 60°C
V
R
= 40V
V
R
= 20V
V
R
= 10V
TMMBAT48
V
R
= 20V
V
R
= 10V
TMMBAT47
Test Conditions
I
R
= 10µA
I
R
= 25µA
I
F
= 0.1mA
I
F
= 1mA
I
F
= 10mA
I
F
= 30mA
I
F
= 150mA
I
F
= 300mA
I
F
= 50mA
I
F
= 200mA
I
F
= 500mA
V
R
= 1.5V
All Types
TMMBAT48
TMMBAT47
TMMBAT47
TMMBAT48
All Types
Min.
20
40
0.25
0.3
0.4
0.5
0.8
1
0.5
0.75
0.9
1
10
4
20
10
30
2
15
5
25
25
50
µA
V
Typ.
Max.
Unit
V
DYNAMIC CHARACTERISTICS
Symbol
C
T
j
= 25°C
T
j
= 25°C
t
rr
T
j
= 25°C
I
F
= 10mA
Test Conditions
V
R
= 0V
V
R
= 1V
V
R
= 1V
i
rr
= 1mA
R
L
= 100Ω
f = 1MHz
Min.
Typ.
20
12
10
ns
Max.
Unit
pF
* Pulse test: t
p
≤
300µs
δ <
2%.
2/5
TMMBAT 47/TMMBAT 48
Figure 1. Forward current versus forward
voltage at different temperatures (typical
values).
Figure 2. Forward current versus forward
voltage (typical values).
Figure 3. Reverse current versus junction
temperature.
Figure 4. Reverse current versus continuous
reverse voltage (typical values).
3/5
TMMBAT 47/TMMBAT 48
Figure 5. Capacitance C versus reverse
applied voltage V
R
(typical values).
4/5
TMMBAT 47/TMMBAT 48
PACKAGE MECHANICAL DATA
MINIMELF Glass
A
DIMENSIONS
REF.
Min.
/
O
B
Millimeters
Typ.
3.40
1.60
0.45
1.50
Max.
3.6
1.62
0.50
Min.
0.130
0.063
0.016
3.30
1.59
0.40
Inches
Typ.
0.134
0.063
0.018
0.059
Max.
0.142
0.064
0.020
A
B
C
D
C
C
FOOT PRINT DIMENSIONS (Millimeter)
2
2.5
5
Marking: ring at cathode end.
Weight: 0.05g
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval
of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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