BLF10H6600P; BLF10H6600PS
Power LDMOS transistor
Rev. 2 — 20 June 2013
Product data sheet
1. Product profile
1.1 General description
A 600 W LDMOS RF power transistor for transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
Table 1.
Application information
f
(MHz)
2-tone, class-AB
pulsed, class-AB
f
1
= 860; f
2
= 860.1
860
P
L(AV)
(W)
250
-
P
L(M)
(W)
-
600
G
p
(dB)
20.8
19.8
D
(%)
46
58
IMD3
(dBc)
32
-
Test signal
RF performance in a common source 860 MHz narrowband test circuit
1.2 Features and benefits
Excellent ruggedness (VSWR
40 : 1 through all phases)
Optimum thermal behavior and reliability, R
th(j-c)
= 0.15 K/W
High power gain
High efficiency
Designed for broadband operation (400 MHz to 1000 MHz)
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Communication transmitter applications
Industrial applications
NXP Semiconductors
BLF10H6600P; BLF10H6600PS
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
Graphic symbol
BLF10H6600P (SOT539A)
1
2
5
3
3
4
4
5
1
2
sym117
BLF10H6600PS (SOT539B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
[1]
1
2
5
1
3
4
3
5
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF10H6600P
BLF10H6600PS
-
-
flanged balanced ceramic package; 2 mounting holes;
4 leads
earless flanged balanced ceramic package; 4 leads
Version
SOT539A
SOT539B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
[1]
Max
110
+11
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability. For details refer to the on-line MTF
calculator.
BLF10H6600P_BLF10H6600PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 20 June 2013
2 of 18
NXP Semiconductors
BLF10H6600P; BLF10H6600PS
Power LDMOS transistor
5. Thermal characteristics
Table 5.
R
th(j-c)
[1]
Thermal characteristics
Conditions
[1]
Symbol Parameter
Typ
Unit
thermal resistance from junction to case T
case
= 80
C;
P
L(AV)
= 250 W
0.15 K/W
R
th(j-c)
is measured under RF conditions.
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
R
DS(on)
[1]
Conditions
V
GS
= 0 V; I
D
= 2.4 mA
V
DS
= 10 V; I
D
= 240 mA
V
GS
= 0 V; V
DS
= 50 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 10 V; V
DS
= 0 V
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 8.5 A
[1]
[1]
[1]
Min Typ
110 -
1.4
-
-
-
-
1.9
-
36
-
143
Max Unit
-
2.4
2.8
-
280
-
V
V
A
A
nA
m
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
drain-source on-state resistance
I
D
is the drain current.
Table 7.
AC characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
C
iss
C
oss
C
rss
[1]
Conditions
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz
[1]
Min Typ Max Unit
-
-
-
220 -
74
1.2
-
-
pF
pF
pF
input capacitance
output capacitance
reverse transfer
capacitance
Capacitance values without internal matching.
Table 8.
RF characteristics
RF characteristics in NXP production narrowband test circuit; T
case
= 25
C unless otherwise
specified.
Symbol Parameter
2-Tone, class-AB
V
DS
I
Dq
P
L(AV)
G
p
D
IMD3
drain-source voltage
quiescent drain current
average output power
power gain
drain efficiency
f
1
= 860 MHz; f
2
= 860.1 MHz
f
1
= 860 MHz; f
2
= 860.1 MHz
f
1
= 860 MHz; f
2
= 860.1 MHz
[1]
Conditions
Min
-
-
250
19.8
42
-
Typ
50
1.3
-
46
32
Max Unit
-
-
-
-
28
V
A
W
dB
%
dBc
20.8 -
third-order intermodulation f
1
= 860 MHz; f
2
= 860.1 MHz
distortion
BLF10H6600P_BLF10H6600PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 20 June 2013
3 of 18
NXP Semiconductors
BLF10H6600P; BLF10H6600PS
Power LDMOS transistor
Table 8.
RF characteristics
…continued
RF characteristics in NXP production narrowband test circuit; T
case
= 25
C unless otherwise
specified.
Symbol Parameter
Pulsed, class-AB
V
DS
I
Dq
P
L(M)
G
p
D
t
p
[1]
Conditions
Min
-
[1]
Typ
50
1.3
600
58
100
20
Max Unit
-
-
-
-
-
-
V
A
W
dB
%
s
%
drain-source voltage
quiescent drain current
peak output power
power gain
drain efficiency
pulse duration
duty cycle
I
Dq
for total device
-
-
17.2
54
-
-
f = 860 MHz
f = 860 MHz
f = 860 MHz
19.8 -
400
C
oss
(pF)
300
001aam579
200
100
0
0
20
40
V
DS
(V)
60
V
GS
= 0 V; f = 1 MHz.
Fig 1.
Output capacitance as a function of drain-source voltage; typical values per
section
7. Test information
7.1 Ruggedness in class-AB operation
The BLF10H6600P and BLF10H6600PS are capable of withstanding a load mismatch
corresponding to VSWR
40 : 1 through all phases under the following conditions:
V
DS
= 50 V; I
Dq
= 1.3 A; P
L
= 600 W (pulsed); f = 860 MHz.
BLF10H6600P_BLF10H6600PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 20 June 2013
4 of 18
NXP Semiconductors
BLF10H6600P; BLF10H6600PS
Power LDMOS transistor
7.2 Impedance information
Table 9.
Typical push-pull impedance
Simulated Z
i
and Z
L
device impedance; impedance info at V
DS
= 50 V and
P
L(AV)
= 600 W (pulsed CW). See
Figure 2
for definition of transistor impedance.
f
MHz
300
325
350
375
400
425
450
475
500
525
550
575
600
625
650
675
700
725
750
775
800
825
850
875
900
925
950
975
1000
Z
i
0.607 + j0
0.622
j1.441
0.639
j1.121
0.658
j0.826
0.679
j0.551
0.703
j0.291
0.73
j0.044
0.76 + j0.194
0.793 + j0.424
0.83 + j0.648
0.872 + j0.869
0.919 + j1.088
0.972 + j1.305
1.032 + j1.523
1.101 + j1.741
1.179 + j1.963
1.268 + j2.187
1.371 + j2.416
1.49 + j2.651
1.629 + j2.891
1.792 + j3.138
1.984 + j3.39
2.212 + j3.649
2.484 + j3.91
2.812 + j4.17
3.209 + j4.421
3.689 + j4.648
4.27 + j4.829
4.967 + j4.927
Z
L
5.495 + j1.936
5.324 + j2.008
5.151 + j2.065
4.977 + j2.107
4.805 + j2.136
4.634 + j2.153
4.466 + j2.157
4.301 + j2.151
4.14 + j2.134
3.984 + j2.109
3.833 + j2.075
3.687 + j2.033
3.546 + j1.985
3.411 + j1.931
3.281 + j1.871
3.156 + j1.807
3.036 + j1.738
2.922 + j1.666
2.813 + j1.591
2.708 + j1.512
2.609 + j1.432
2.514 + j1.349
2.423 + j1.264
2.336 + j1.178
2.254 + j1.091
2.175 + j1.003
2.1 + j0.913
2.029 + j0.823
1.96 + j0.733
BLF10H6600P_BLF10H6600PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 20 June 2013
5 of 18
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
