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W06M

产品描述1.5 A, SILICON, BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小117KB,共2页
制造商辰颐电子
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W06M概述

1.5 A, SILICON, BRIDGE RECTIFIER DIODE

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W005M thru W10M
SINGLE-PHASE SILICON BRIDGE
CHENG- YI
ELECTRONIC
VOLTAGE RANGE
50 TO 1000 VOLTS
CURRENT
1.5 Amperes
FEATURES
High reverse voltage to 1000V
Surge overload ratings to 50 amperes peak
Good for printed circuit board assembly
Mounting position: Any
Weight: 1.20 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
0
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS
(At T
A
=25
0
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current at @
TA=25 C
0
SYMBOLS
W005M
V
RRM
V
RMS
V
DC
I
O
50
35
50
W01M
100
70
100
W02M
200
140
200
W04M
400
280
400
1.5
W06M
600
420
600
W08M
800
560
800
W010M
1000
700
1000
UNITS
V
V
V
A
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
(JEDEC Method)
Operating Temperature Range
Storage Temperature Range
0
I
FSM
T
J
T
STG
50
A
-55 to +125
-55 to +150
0
C
C
0
ELECTRICAL CHARACTERISTICS
(At T
A
=25 C unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage drop per element of 1.0A DC
W005M
W01M
W02M
W04M
1.0
10
1
W06M
W08M
W010M
UNITS
V
V
F
I
R
Maximum Reverse Current at Rated
DC Blocking Voltage per element
@ TA=25
0
C
@ TA=100
0
C
A
mA

W06M相似产品对比

W06M W005M W01M W02M W04M W08M W010M
描述 1.5 A, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE GENESIC SEMICONDUCTOR - W02M - BRIDGE RECTIFIER; 1PH; 1.5A; 200V; DOB GENESIC SEMICONDUCTOR - W04M - BRIDGE RECTIFIER; 1PH; 1.5A; 400V; DOB 1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE single-phase silicon bridge

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