SSF6008
Feathers:
Advanced trench process technology
avalanche energy, 100% test
Fully characterized avalanche voltage and current
Description:
The SSF6008 is a new generation of high voltage and low
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF6008 is assembled
in high reliability and qualified assembly house.
Application:
Power switching application
SSF6008TOP View (T0-220)
ID =84A
BV=60V
Rdson=8mΩ
Absolute Maximum Ratings
Parameter
I
D
@T
c
=25
ْ
C
I
D
@T
c
=100ْC
I
DM
P
D
@T
C
=25ْC
V
GS
E
AS
E
AR
dv/dt
T
J
T
STG
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-case
Junction-to-ambient
Min.
—
—
Typ.
0.83
—
Max.
—
62
Units
ْ
C/W
Continuous drain current,VGS@10V
Continuous drain current,VGS@10V
Pulsed drain current
①
Power dissipation
Linear derating factor
Gate-to-Source voltage
Single pulse avalanche energy
②
Repetitive avalanche energy①
Peak diode recovery voltage
Operating Junction and
Storage Temperature Range
Max.
84
76
310
150
1.5
±20
400
20
30
–55 to +150
W
W/
ْ
C
V
mJ
mJ
v/ns
ْ
C
A
Units
Electrical Characteristics @TJ=25
ْ
C(unless otherwise specified)
Parameter
BV
DSS
V
GS(th)
I
DSS
Drain-to-Source breakdown voltage
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Gate-to-Source reverse leakage
R
DS(on)
Static Drain-to-Source on-resistance
Min.
60
—
2.0
—
—
—
—
2009.7.10
Typ.
—
5.5
—
—
—
—
—
Max. Units
—
8
4.0
2
10
100
-100
V
V
Test Conditions
V
GS
=0V,I
D
=250μA
V
DS
=V
GS
,I
D
=250μA
V
DS
=60V,V
GS
=0V
mΩ V
GS
=10V,I
D
=30A
μA
V
DS
=60V,
V
GS
=0V,T
J
=150ْC
nA
V
GS
=20V
V
GS
=-20V
Version : 1.0
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1of5
I
GSS
©
Silikron Semiconductor CO.,LTD.
SSF6008
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
—
—
—
—
—
—
—
—
—
—
90
18
28
18.2
15.6
70.5
13.8
3150
300
240
nS
—
—
V
DD
=30V
I
D
=2A ,R
L
=15Ω
R
G
=2.5Ω
V
GS
=10V
V
GS
=0V
pF V
DS
=25V
f=1.0MHZ
nC
I
D
=30A,V
GS
=10V
V
DD
=30V
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
①
Reverse Recovery Time
Forward Turn-on Time
.
.
Min.
—
—
—
－
－
Typ.
—
—
—
57
107
Max.
84
A
310
1.3
—
—
V
nS
μC
Units
Test Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
=25ْC,I
S
=60A,V
GS
=0V
③
T
J
=25ْC,I
F
=75A
di/dt=100A/μs
③
V
SD
Diode Forward Voltage
t
rr
t
on
Q
rr
Reverse Recovery Charge
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
①
Repetitive rating; pulse width limited by max junction temperature.
②
Test condition: L =0.3mH, VDD = 30V,Id=37A
③
Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω
Starting TJ = 25°C
EAS Test Circuit:
Gate Charge Test Circuit:
©
Silikron Semiconductor CO.,LTD.
2009.7.10
Version : 1.0
page
2of5
SSF6008
Switch Time Test Circuit:
Switch Waveform:
Transfer Characteristic
Capacitance
On Resistance vs Junction Temperature
Breakdown Voltage vs Junction Temperature
©
Silikron Semiconductor CO.,LTD.
2009.7.10
Version : 1.0
page
3of5
SSF6008
Gate Charge
Source-Drain Diode Forward Voltage
Safe Operation Area
Max Drain Current vs Junction
Transient Thermal Impedance Curve
©
Silikron Semiconductor CO.,LTD.
2009.7.10
Version : 1.0
page
4of5
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