SSF2429
DESCRIPTION
The SSF2429 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and operation
with gate voltages as low as 2.5V.
D
G
GENERAL FEATURES
●
V
DS
= -20V,I
D
=-5A
R
DS(ON)
< 35mΩ @ V
GS
=-4.5V
R
DS(ON)
< 48mΩ @ V
GS
=-2.5V
S
Schematic diagram
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
Marking and pin Assignment
Application
●Battery
protection
●Load
switch
●Power
management
SOT23-6 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
2429
Device
SSF2429
Device Package
SOT23-6
Reel Size
Ø180mm
Tape width
8mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Limit
-20
±12
-5
-20
1.4
-55 To 150
Unit
V
V
A
A
W
℃
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
90
℃
/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V I
D
=-250μA
Min
-20
Typ
Max
Unit
V
©Silikron Semiconductor CO.,LTD.
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SSF2429
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
V
SD
V
GS
=0V,I
S
=-1.3A
-1.3
V
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=-10V,I
D
=-4.5A,
V
GS
=-5V
V
DD
=-10V,I
D
=-1A
V
GS
=-4.5V,R
GEN
=6Ω
5
13
80
35
17
4
4.5
nS
nS
nS
nS
nC
nC
nC
C
lss
C
oss
C
rss
V
DS
=-10V,V
GS
=0V,
F=1.0MHz
1450
200
160
PF
PF
PF
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-4.5V, I
D
=-5A
V
GS
=-2.5V, I
D
=-3A
V
DS
=-10V,I
D
=-3A
4
-0.5
-0.7
29
37
-1
35
48
V
mΩ
mΩ
S
I
DSS
I
GSS
V
DS
=-20V,V
GS
=0V
V
GS
=±12V,V
DS
=0V
-1
±100
μA
nA
NOTES:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on 1in
2
FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production testing.
©Silikron Semiconductor CO.,LTD.
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SSF2429
SOT23-6 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
NOTES：
1. All dimensions are in millimeters.
2. Dimensions are inclusive of plating
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
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v1.0
SSF2429
ATTENTION:
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can
be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron
representative nearest you before using any Silikron products described or contained herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and
functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that
cannot be evaluated in an independent device, the customer should always evaluate and test devices
mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to
other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such
measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
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Silikron Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use
or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product
that you intend to use.
■
■
■
■
■
■
■
■
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without
notice.
©Silikron Semiconductor CO.,LTD.
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