SSF2316E
GENERAL FEATURES
●
V
DS
= 20V,I
D
= 7A
R
DS(ON)
< 35mΩ @ V
GS
=2.5V
R
DS(ON)
< 30mΩ @ V
GS
=3.1V
R
DS(ON)
< 24mΩ @ V
GS
=4V
R
DS(ON)
< 23mΩ @ V
GS
=4.5V
ESD Rating：2000V HBM
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
Schematic diagram
Pin Assignment
Application
●Battery
protection
●Load
switch
●Power
management
DFN3×3-8L BOTTOM VIEW
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
2316E
Device
SSF2316E
Device Package
DFN3×3-8L
Reel Size
-
Tape width
-
Quantity
-
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Limit
20
±12
7
40
1.4
-55 To 150
Unit
V
V
A
A
W
℃
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
83
℃
/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V I
D
=250μA
Min
20
Typ
Max
Unit
V
©Silikron Semiconductor CO.,LTD.
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v1.0
SSF2316E
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
,I
D
=250μA
V
GS
=4.5V, I
D
=4A
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=4V, I
D
=4A
V
GS
=3.1V, I
D
=4A
V
GS
=2.5V, I
D
=2A
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
V
SD
V
GS
=0V,I
S
=7A
0.83
1.2
V
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=10V,I
D
=7A,
V
GS
=4.5V
V
DD
=10V,I
D
=1A
V
GS
=4.5V,R
GEN
=6Ω
15
100
60
90
20
2.5
3
nS
nS
nS
nS
nC
nC
nC
C
lss
C
oss
C
rss
V
DS
=8V,V
GS
=0V,
F=1.0MHz
900
350
150
PF
PF
PF
g
FS
V
DS
=10V,I
D
=3.5A
0.5
17
18
20
24
11
1.3
23
24
30
35
V
mΩ
mΩ
mΩ
mΩ
S
I
DSS
I
GSS
V
DS
=20V,V
GS
=0V
V
GS
=±8V,V
DS
=0V
1
±10
μA
μA
NOTES:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production testing.
©Silikron Semiconductor CO.,LTD.
2
http://www.silikron.com
v1.0
SSF2316E
ATTENTION:
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can
be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron
representative nearest you before using any Silikron products described or contained herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and
functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that
cannot be evaluated in an independent device, the customer should always evaluate and test devices
mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to
other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such
measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under
any of applicable local export control laws and regulations, such products must not be exported without obtaining the export
license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of
Silikron Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use
or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product
that you intend to use.
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.
■
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©Silikron Semiconductor CO.,LTD.
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