JMnic
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-3PFa package
・Complement
to type 2SD1488
・High
f
T
・Satisfactory
linearity of h
FE
・Wide
area of safe operation
APPLICATIONS
・For
high power amplifier applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
2SB1057
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25℃
P
C
Collector power dissipation
3
T
j
T
stg
Junction temperature
Storage temperature
150
-55~150
℃
℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-150
-150
-5
-9
-15
100
W
UNIT
V
V
V
A
A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE -2
h
FE -3
C
OB
f
T
PARAMETER
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-7A ;I
B
=-0.7A
I
C
=-7A ; V
CE
=-5V
V
CB
=-150V; I
E
=0
V
EB
=-3V; I
C
=0
I
C
=-20mA ; V
CE
=-5V
I
C
=-1A ; V
CE
=-5V
I
C
=-7A ; V
CE
=-5V
I
E
=0 ; V
CB
=-10V;f=1MHz
I
C
=-0.5A ; V
CE
=-10V
20
40
20
450
20
MIN
TYP.
2SB1057
MAX
-2.0
-1.8
-50
-50
UNIT
V
V
μA
μA
200
pF
MHz
h
FE-2
classifications
R
40-80
Q
60-120
P
100-200
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1057
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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