SSM5H14F
Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode
SSM5H14F
○
Fuse cut applications of the battery pack
•
•
•
1.8-V drive
An N-ch MOSFET and a Schottky Barrier Diode in one package.
Low R
DS (ON)
and Low V
F
Unit: mm
Absolute Maximum Ratings
MOSFET
(Ta
=
25°C)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation
Channel temperature
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
Rating
30
±12
3.0
6.0
0.75
150
Unit
V
V
A
W
°C
1. Gate
2. Source
3. Anode
4. Cathode
5. Drain
Schottky Diode
(Ta
=
25°C)
Characteristics
Maximum (peak) reverse Voltage
Reverse voltage
Average forward current
Maximum (peak) forward current
Surge current (10ms)
Junction temperature
Symbol
V
RM
V
R
I
O
I
FM
I
FSM
T
j
Rating
45
40
100
300
1
125
Unit
V
V
mA
mA
A
°C
SMV
JEDEC
JEITA
TOSHIBA
⎯
SC-74A
2-3L1F
Weight : 14 mg (typ.)
MOSFET and Diode
(Ta
=
25°C)
Characteristics
Storage temperature range
Operating temperature range
Symbol
T
stg
T
opr
Rating
−55
to 125
−40
to 100
Unit
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
2
Note 1: Mounted on FR4 board (25.4 mm
×
25.4 mm
×
1.6 mm, Cu pad: 645 mm )
Marking
5
4
Equivalent Circuit (top view)
5
4
KEZ
1
2
3
1
2
3
1
2009-05-15
SSM5H14F
MOSFET
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Symbol
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
|Y
fs
|
R
DS (ON)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Turn-on time
Turn-off time
t
on
t
off
V
DSF
V
DD
= 15 V, I
D
= 3.0 A
V
GS
= 4 V
V
DD
=
10 V, I
D
=
2 A
V
GS
=
0 to 2.5 V, R
G
=
4.7
Ω
I
D
=
-3.0 A, V
GS
=
0 V
(Note2)
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
Test Conditions
I
D
=
1 mA, V
GS
=
0 V
I
D
=
1 mA, V
GS
=
-12 V
V
DS
=30
V, V
GS
=
0 V
V
GS
= ±12
V, V
DS
=
0 V
V
DS
=
3 V, I
D
=
1 mA
V
DS
=
3 V, I
D
=
2.0 A
I
D
=
2.0 A, V
GS
=
4.0 V
Drain–source ON-resistance
I
D
=
1.0 A, V
GS
=
2.5 V
I
D
=
0.5 A, V
GS
=
1.8 V
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
(Note2)
(Note2)
(Note2)
(Note2)
Min
30
18
⎯
⎯
0.4
3.8
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
7.7
59
71
88
270
56
47
4.3
2.8
1.5
20
31
–0.85
Max
⎯
⎯
1
±1
1.0
⎯
78
94
138
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
–1.2
ns
V
nC
pF
mΩ
Unit
V
μA
μA
V
S
Drain-Source forward voltage
Note 2: Pulse test
Switching Time Test Circuit
(a) Test Circuit
2.5 V
0
10
μs
V
DD
OUT
V
DD
=
10 V
R
G
=
4.7
Ω
D.U.≤ 1%
V
IN
: t
r
, t
f
<
5 ns
Common Source
Ta
=
25°C
(b) V
IN
2.5 V
10%
90%
IN
0V
V
DD
(c) V
OUT
V
DS (ON)
t
on
t
r
90%
10%
t
f
t
off
Precaution
V
th
can be expressed as voltage between gate and source when the low operating current value is I
D =
1 mA for
this product. For normal switching operation, V
GS (on)
requires a higher voltage than V
th
and V
GS (off)
requires a
lower voltage than V
th
.
(The relationship can be established as follows: V
GS (off)
<
V
th
<
V
GS (on)
)
Be sure to take this into consideration when using the device.
2
2009-05-15
SSM5H14F
Schottky Barrier Diode
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
I
R
C
T
Test Condition
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
V
R
= 40 V
V
R
= 0 V, f = 1MHz
Min
―
―
―
―
―
Typ.
0.28
0.36
0.54
―
18
Max
―
―
0.60
5
25
μA
pF
V
Unit
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
The Channel-to-Ambient thermal resistance R
th (ch-a)
and the drain power dissipation P
D
vary according to the board
material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into
account.
3
2009-05-15
SSM5H14F
MOS FET
I
D
– V
DS
5
10 V
4.0 V 2.5 V
10
Common Source
VDS
=
3 V
I
D
– V
GS
(A)
1.8 V
I
D
3
I
D
Drain current
(A)
4
1
Drain current
0.1
2
VGS = 1.5 V
1
Common Source
Ta
=
25 °C
0
0.2
0.4
0.6
0.8
1
0.01
Ta
=
100 °C
25 °C
−
25 °C
0.001
0
0.0001
0
1.0
2.0
Drain–source voltage
V
DS
(V)
Gate–source voltage
V
GS
(V)
R
DS (ON)
– V
GS
200
ID
=0.5A
Common Source
150
Ta
=
25°C
200
R
DS (ON)
– I
D
Drain–source ON-resistance
R
DS (ON)
(mΩ)
Drain–source ON-resistance
R
DS (ON)
(mΩ)
150
100
Ta
=
100 °C
50
25 °C
−
25 °C
0
100
1.8 V
2.5 V
50
VGS = 4.0
Ｖ
Common Source
Ta
=
25°C
0
2
4
6
8
10
0
0
1
2
3
4
5
Gate–source voltage
V
GS
(V)
Drain current
I
D
(A)
R
DS (ON)
– Ta
300
1.0
V
th
– Ta
Common Source
V
th
(V)
Common Source
Drain–source ON-resistance
R
DS (ON)
(mΩ)
250
VDS
=
3V
ID
=
1 mA
150
0.5 A / 1.8 V
1.0 A / 2.5 V
Gate threshold voltage
200
0.5
100
ID
=
2.0 A / VGS
=
4.0 V
50
0
−50
0
50
100
150
0
−50
0
50
100
150
Ambient temperature
Ta
(°C)
Ambient temperature
Ta
(°C)
4
2009-05-15
SSM5H14F
MOS FET
.
(S)
10
Common Source
|Y
fs
| – I
D
10
VDS
=
3 V
Ta
=
25°C
3
Common Source
VGS
=
0 V
D
1
G
I
DR
I
DR
– V
DS
⎪Y
fs
⎪
Forward transfer admittance
Drain reverse current
I
DR
(A)
S
0.1
Ta =100 °C
1
0.3
0.01
25 °C
−25
°C
0.1
0.01
0.1
1
10
0.001
0
–0.2
–0.4
–0.6
–0.8
–1.0
Drain current
I
D
(A)
Drain–source voltage
V
DS
(V)
C – V
DS
1000
t – I
D
1000
Common Source
VDD
=
10 V
VGS
=
0 to 2.5 V
Ta
=
25 °C
RG
=
4.7Ω
500
(pF)
300
Ciss
(ns)
toff
100
C
tf
Capacitance
100
50
30
Common Source
Ta
=
25°C
f
=
1 MHz
VGS
=
0 V
1
10
Coss
Crss
Switching time
t
10
ton
tr
10
0.1
100
1
0.01
0.1
1
10
Drain–source voltage
V
DS
(V)
Drain current
I
D
(A)
Dynamic Input Characteristic
10
Common Source
V
GS
(V)
ID
=
3 A
8
Ta
=
25°C
Gate–Source voltage
6
VDD=15V
4
VDD=24V
2
0
0
4
8
12
Total Gate Charge
Qg
(nC)
5
2009-05-15
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