JMnic
Product Specification
Silicon PNP Power Transistors
2SB1033
DESCRIPTION
・With
TO-220 package
・Complement
to type 2SD1437
APPLICATIONS
・For
low frequency power amplifier
applications
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-60
-60
-5
-3
40
150
-55~150
UNIT
V
V
V
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
C
ob
PARAMETER
Base-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=-25mA ,I
B
=0
I
C
=-1mA ,I
E
=0
I
E
=-1mA ,I
C
=0
I
C
=-2A; I
B
=-0.2A
I
C
=-2A; I
B
=-0.2A
V
CB
=-60V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.5A ; V
CE
=-5V
I
C
=-0.5A ; V
CE
=-5V
I
E
=0 ; V
CB
=-10V ;f=1MHz
60
12
100
MIN
-60
-60
-5
TYP.
2SB1033
MAX
UNIT
V
V
V
-1.5
-1.5
-10
-10
320
V
V
μA
μA
MHz
pF
h
FE
Classifications
D
60-120
E
100-200
F
160-320
2
单片机
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