JMnic
Product Specification
Silicon PNP Power Transistors
2SB1022
DESCRIPTION
・With
TO-220Fa package
・High
DC current gain
・Low
saturation voltage
・Complement
to type 2SD1417
APPLICATIONS
・High
power switching applications
・Hammer
drive,pulse motor drive applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
Base current
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
30
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-60
-60
-5
-7
-0.2
2.0
W
UNIT
V
V
V
A
A
JMnic
Product Specification
Silicon PNP Power Transistors
2SB1022
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-50mA; I
B
=0
-60
V
V
CEsat-1
Collector-emitter saturation voltage
I
C
=-3A ;I
B
=-6mA
-1.5
V
V
CEsat-2
Collector-emitter saturation voltage
I
C
=-7A ;I
B
=-14mA
-2.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=-3A ;I
B
=-6mA
-2.5
V
I
CBO
Collector cut-off current
V
CB
=-60V; I
E
=0
-100
μA
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-4.0
mA
h
FE-1
DC current gain
I
C
=-3A ; V
CE
=-3V
2000
15000
h
FE-2
DC current gain
I
C
=-7A ; V
CE
=-3V
1000
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1022
Fig.2 Outline dimensions (unindicated tolerance:
±0.15
mm)
3
单片机
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