JMnic
Product Specification
Silicon PNP Power Transistors
2SB1021
DESCRIPTION
・With
TO-220Fa package
・High
DC current gain
・Low
saturation voltage
・Complement
to type 2SD1416
APPLICATIONS
・High
power switching applications
・Hammer
drive,pulse motor drive applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
Base current
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
30
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-80
-80
-5
-7
-0.2
2.0
W
UNIT
V
V
V
A
A
JMnic
Product Specification
Silicon PNP Power Transistors
2SB1021
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat-1
V
CEsat-2
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=-50mA; I
B
=0
I
C
=-3A ;I
B
=-6mA
I
C
=-7A ;I
B
=-14mA
I
C
=-3A ;I
B
=-6mA
V
CB
=-80V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-3A ; V
CE
=-3V
I
C
=-7A ; V
CE
=-3V
2000
1000
MIN
-80
-1.5
-2.0
-2.5
-100
-4.0
15000
TYP.
MAX
UNIT
V
V
V
V
μA
mA
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
B1
=-I
B2
=-6mA; V
CC
≈-45V
R
L
=15Ω
0.8
2.0
2.5
μs
μs
μs
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1021
Fig.2 Outline dimensions (unindicated tolerance:
±0.15
mm)
3
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