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HYMD132G725B8M-L: 产品描述Low Profile Registered DDR SDRAM DIMM; 产品类别存储存储; 文件大小250KB，共17页; 制造商SK Hynix(海力士); 官网地址http://www.hynix.com/eng/

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HYMD132G725B8M-L概述

Low Profile Registered DDR SDRAM DIMM

HYMD132G725B8M-L规格参数

参数名称	属性值
厂商名称	SK Hynix(海力士)
零件包装代码	DIMM
包装说明	DIMM, DIMM184
针数	184
Reach Compliance Code	unknow
ECCN代码	EAR99
访问模式	FOUR BANK PAGE BURST
最长访问时间	0.8 ns
其他特性	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	125 MHz
I/O 类型	COMMON
JESD-30 代码	R-XDMA-N184
长度	133.35 mm
内存密度	2415919104 bi
内存集成电路类型	DDR DRAM MODULE
内存宽度	72
功能数量	1
端口数量	1
端子数量	184
字数	33554432 words
字数代码	32000000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	32MX72
输出特性	3-STATE
封装主体材料	UNSPECIFIED
封装代码	DIMM
封装等效代码	DIMM184
封装形状	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY
电源	2.5 V
认证状态	Not Qualified
刷新周期	4096
座面最大高度	3.99 mm
自我刷新	YES
最大待机电流	0.92 A
最大压摆率	2.99 mA
最大供电电压 (Vsup)	2.7 V
最小供电电压 (Vsup)	2.3 V
标称供电电压 (Vsup)	2.5 V
表面贴装	NO
技术	CMOS
温度等级	COMMERCIAL
端子形式	NO LEAD
端子节距	1.27 mm
端子位置	DUAL
宽度	30.48 mm

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32Mx72 bits

Low Profile Registered DDR SDRAM DIMM

HYMD132G725B(L)8M-M/K/H/L

DESCRIPTION

Hynix HYMD132G725B(L)8M-M/K/H/L series is Low Profile registered 184-pin double data rate Synchronous DRAM

Dual In-Line Memory Modules (DIMMs) which are organized as 32Mx72 high-speed memory arrays. Hynix

HYMD132G725B(L)8M-M/K/H/L series consists of eighteen 16Mx8 DDR SDRAM in 400mil TSOP II packages on a

184pin glass-epoxy substrate. Hynix HYMD132G725B(L)8M-M/K/H/L series provide a high performance 8-byte inter-

face in 5.25" width form factor of industry standard. It is suitable for easy interchange and addition.

Hynix HYMD132G725B(L)8M-M/K/H/L series is designed for high speed of up to 133MHz and offers fully synchronous

operations referenced to both rising and falling edges of differential clock inputs. While all addresses and control

inputs are latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sampled on

both rising and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high

bandwidth. All input and output voltage levels are compatible with SSTL_2. High speed frequencies, programmable

latencies and burst lengths allow variety of device operation in high performance memory system.

Hynix HYMD132G725B(L)8M-M/K/H/L series incorporates SPD(serial presence detect). Serial presence detect function

is implemented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to iden-

tify DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer.

FEATURES

•

256MB (32M x 72) Low Profile Registered DDR DIMM

based on 16Mx8 DDR SDRAM

JEDEC Standard 184-pin dual in-line memory module

(DIMM)

Error Check Correction (ECC) Capability

Registered inputs with one-clock delay

Phase-lock loop (PLL) clock driver to reduce loading

2.5V +/- 0.2V VDD and VDDQ Power supply

All inputs and outputs are compatible with SSTL_2

interface

•

Fully differential clock operations (CK & /CK) with

100MHz/125MHz/133MHz

Programmable CAS Latency 2 / 2.5 supported

Programmable Burst Length 2 / 4 / 8 with both

sequential and interleave mode

tRAS Lock-out function supported

Internal four bank operations with single pulsed RAS

Auto refresh and self refresh supported

4096 refresh cycles / 64ms

ORDERING

INFORMATION

Part No.

HYMD132G725B(L)8M-M

HYMD132G725B(L)8M-K

HYMD132G725B(L)8M-H

HYMD132G725B(L)8M-L

VDD=2.5V

VDDQ=2.5V

Power Supply

Clock Frequency

133MHz (*DDR266:2-2-2)

133MHz (*DDR266A)

133MHz (*DDR266B)

100MHz (*DDR200)

Interface

Form Factor

SSTL_2

184pin Low Profile Registered

DIMM

5.25 x 1.2 x 0.15 inch

* JEDEC Defined Specifications compliant

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 0.3/May. 02

HYMD132G725B8M-L相似产品对比

	HYMD132G725B8M-L	HYMD132G725B8M-H	HYMD132G725B8M-K	HYMD132G725B8M-M	HYMD132G725BL8M-H	HYMD132G725BL8M-L	HYMD132G725BL8M-M
描述	Low Profile Registered DDR SDRAM DIMM	Low Profile Registered DDR SDRAM DIMM	Low Profile Registered DDR SDRAM DIMM	Low Profile Registered DDR SDRAM DIMM	Low Profile Registered DDR SDRAM DIMM	Low Profile Registered DDR SDRAM DIMM	Low Profile Registered DDR SDRAM DIMM
厂商名称	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)
零件包装代码	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
包装说明	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184
针数	184	184	184	184	184	184	184
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
最长访问时间	0.8 ns	0.75 ns	0.75 ns	0.75 ns	0.75 ns	0.8 ns	0.75 ns
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	125 MHz	133 MHz	133 MHz	133 MHz	133 MHz	125 MHz	133 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184
长度	133.35 mm	133.35 mm	133.35 mm	133.35 mm	133.35 mm	133.35 mm	133.35 mm
内存密度	2415919104 bi	2415919104 bi	2415919104 bi	2415919104 bi	2415919104 bi	2415919104 bi	2415919104 bi
内存集成电路类型	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
内存宽度	72	72	72	72	72	72	72
功能数量	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1
端子数量	184	184	184	184	184	184	184
字数	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words
字数代码	32000000	32000000	32000000	32000000	32000000	32000000	32000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	32MX72	32MX72	32MX72	32MX72	32MX72	32MX72	32MX72
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装代码	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
封装等效代码	DIMM184	DIMM184	DIMM184	DIMM184	DIMM184	DIMM184	DIMM184
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
电源	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
刷新周期	4096	4096	4096	4096	4096	4096	4096
座面最大高度	3.99 mm	3.99 mm	3.99 mm	3.99 mm	3.99 mm	3.99 mm	3.99 mm
自我刷新	YES	YES	YES	YES	YES	YES	YES
最大待机电流	0.92 A	0.92 A	0.92 A	0.92 A	0.92 A	0.92 A	0.92 A
最大压摆率	2.99 mA	3.35 mA	3.35 mA	3.35 mA	3.35 mA	2.99 mA	3.35 mA
最大供电电压 (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
最小供电电压 (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
标称供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
表面贴装	NO	NO	NO	NO	NO	NO	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子节距	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
宽度	30.48 mm	30.48 mm	30.48 mm	30.48 mm	30.48 mm	30.48 mm	30.48 mm

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