HMC263LP4E
v01.0709
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
8
LOW NOISE AMPLIFIERS - SMT
Typical Applications
The HMC263LP4E is ideal for:
• Millimeterwave Point-to-Point Radios
• LMDS
• VSAT
• SATCOM
Features
Low Noise Figure: 2.2 dB
High Gain: 20 dB
Single Positive Supply: +3V or +5V
DC Blocked RF I/Os
No External Matching
24 Lead 4x4mm QFN Package: 16mm2
Functional Diagram
General Description
The HMC263LP4E is a GaAs MMIC Low Noise
Amplifier (LNA) which covers the frequency range
of 24 to 36 GHz and is housed in a leadless plastic
SMT package. The HMC263LP4E utilizes a GaAs
PHEMT process offering 20 dB gain from a single
bias supply of + 3V @ 58 mA with a noise figure of
2.2 dB. The HMC263LP4E may be used in conjunc-
tion with HMC264LC3B or HMC265LM3 mixers to
realize a millimeterwave system receiver. The RF I/Os
are DC blocked and matched to 50 Ohms requiring no
external components.
Electrical Specifi cations,
T
A
= +25° C, Vdd = +3V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd) (@ Vdd = +3.0V)
19
Min.
Typ.
24 - 27
21
0.03
2.0
12
10
6
9
16
58
77
3.0
27
17
Max.
Min.
Typ.
27 - 32
19
0.03
2.2
9
9
8
11
18
58
77
3.0
23
15
Max.
Min.
Typ.
32 - 36
17
0.03
2.5
11
9
9
12
20
58
77
4.0
20
Max.
Units
GHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
mA
8-2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC263LP4E
v01.0709
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
Gain vs. Temperature @ Vdd = +3V
26
Gain vs. Temperature @ Vdd = +5V
26
8
LOW NOISE AMPLIFIERS - SMT
8-3
22
GAIN (dB)
GAIN (dB)
+25 C
+85 C
- 40 C
22
18
18
14
14
+25 C
+85 C
- 40 C
10
18
22
26
30
34
38
FREQUENCY (GHz)
10
18
22
26
30
34
38
FREQUENCY (GHz)
Input Return Loss @ Vdd = +3V
0
+25 C
+85 C
- 40 C
Input Return Loss @ Vdd = +5V
0
+25 C
+85 C
- 40 C
RETURN LOSS (dB)
-10
RETURN LOSS (dB)
34
38
-5
-5
-10
-15
-15
-20
18
22
26
30
FREQUENCY (GHz)
-20
18
22
26
30
34
38
FREQUENCY (GHz)
Output Return Loss @ Vdd = +3V
0
Output Return Loss @ Vdd = +5V
0
RETURN LOSS (dB)
-10
RETURN LOSS (dB)
-5
+25 C
+85 C
- 40 C
-5
+25 C
+85 C
- 40 C
-10
-15
-15
-20
18
22
26
30
34
38
FREQUENCY (GHz)
-20
18
22
26
30
34
38
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC263LP4E
v01.0709
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
Noise Figure
vs. Temperature @ Vdd = +5V
8
8
LOW NOISE AMPLIFIERS - SMT
Noise Figure
vs. Temperature @ Vdd = +3V
8
6
NF (dB)
+25 C
+85 C
- 40 C
6
NF (dB)
+25 C
+85 C
- 40 C
4
4
2
2
0
18
22
26
30
34
38
FREQUENCY (GHz)
0
18
22
26
30
34
38
FREQUENCY (GHz)
Isolation @ Vdd = +3V
0
Isolation @ Vdd = +5V
0
-20
ISOLATION (dB)
-40
ISOLATION (dB)
+25 C
+85 C
- 40 C
-20
+25 C
+85 C
- 40 C
-40
-60
-60
-80
18
22
26
30
34
38
FREQUENCY (GHz)
-80
18
22
26
30
34
38
FREQUENCY (GHz)
Output P1dB @ Vdd = +3V
16
Output P1dB @ Vdd = +5V
16
12
P1dB (dBm)
P1dB (dBm)
12
8
8
4
+25 C
+85 C
- 40 C
4
+25 C
+85 C
- 40 C
0
18
22
26
30
34
38
FREQUENCY (GHz)
0
18
22
26
30
34
38
FREQUENCY (GHz)
8-4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC263LP4E
v01.0709
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
Psat @ Vdd = +3V
18
Psat @ Vdd = +5V
18
8
LOW NOISE AMPLIFIERS - SMT
8-5
14
Psat (dBm)
Psat (dBm)
14
10
10
+25 C
+85 C
- 40 C
6
+25 C
+85 C
- 40 C
6
2
18
22
26
30
34
38
FREQUENCY (GHz)
2
18
22
26
30
34
38
FREQUENCY (GHz)
Output IP3 @ Vdd = +3V
25
Output IP3 @ Vdd = +5V
25
20
IP3 (dBm)
IP3 (dBm)
+25 C
+85 C
- 40 C
20
15
15
10
10
+25 C
+85 C
- 40 C
5
18
22
26
30
34
38
FREQUENCY (GHz)
5
18
22
26
30
34
38
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC263LP4E
v01.0709
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
8
LOW NOISE AMPLIFIERS - SMT
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2)
RF Input Power (RFIN)(Vdd = +3 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 7.7 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+5.5 Vdc
-5 dBm
175 °C
0.7 W
130 °C/W
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE
MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information
Part Number
HMC263LP4E
Package Body Material
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
100% matte Sn
MSL Rating
MSL3
[2]
Package Marking
[1]
H263
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak reflow temperature of 260 °C
8-6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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