2MBI1200U4G-170
IGBT MODULE (U series)
1700V / 1200A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
IGBT Modules
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
V
CES
V
GES
Ic
Collector current
Icp
Conditions
Maximum ratings
1700
±20
1600
1200
3200
2400
1200
2400
6250
150
-40 to +125
3400
5.75
10
2.5
Units
V
V
Maximum Ratings and Characteristics
Continuous
1ms
-Ic
-Ic pulse
1ms
Collector power dissipation
Pc
1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage
between terminal and copper base (*1)
V
iso
AC : 1min.
Mounting
Screw torque (*2)
Main Terminals
Sense Terminals
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
A
W
°C
VAC
Nm
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 4.25-5.75 Nm (M6), Main Terminals : 8-10 Nm (M8), Sense Terminals : 1.7-2.5 Nm (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Symbols
I
CES
I
GES
V
GE (th)
V
CE (sat)
(main terminal)
V
CE (sat)
(chip)
Cies
ton
tr
toff
tf
V
F
(main terminal)
V
F
(chip)
trr
R lead
Conditions
V
GE
= 0V, V
CE
= 1700V
V
CE
= 0V, V
GE
= ±20V
V
CE
= 20V, I
C
= 1200mA
Characteristics
min.
typ.
max.
-
-
1.0
-
-
1600
5.5
6.5
7.5
-
2.57
2.76
-
2.97
-
-
2.25
2.40
-
2.65
-
-
112
-
-
3.10
-
-
1.25
-
-
1.45
-
-
0.25
-
-
2.12
2.51
-
2.32
-
-
1.80
2.15
-
2.00
-
-
0.45
-
-
0.27
-
Units
mA
nA
V
V
nF
µs
Tj=25°C
Tj=125°C
V
GE
= 15V
I
C
= 1200A
Tj=25°C
Tj=125°C
V
CE
= 10V, V
GE
= 0V, f = 1MHz
V
CC
= 900V, I
C
= 1200A,
V
GE
= ±15V, Tj = 125°C,
R
gon
= 4.7Ω, R
goff
= 1.2Ω
V
GE
= 0V
I
F
= 1200A
I
F
= 1200A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip (*3)
Note *3: Biggest internal terminal resistance among arm.
V
µs
mΩ
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance (1device)
Symbols
Rth(j-c)
Rth(c-f)
Conditions
IGBT
FWD
with Thermal Compound (*4)
Characteristics
min.
typ.
max.
-
-
0.020
-
-
0.033
-
0.006
-
Units
°C/W
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1
2MBI1200U4G-170
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25°C, chip
2800
2400
Collector current : Ic [A]
IGBT Modules
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125°C, chip
2800
VGE=20V 15V
12V
VGE=20V 15V
12V
Collector current : Ic [A]
2400
2000
1600
2000
1600
1200
800
400
0
0.0
8V
10V
10V
1200
800
400
0
0.0
8V
1.0
2.0
3.0
4.0
5.0
1.0
2.0
3.0
4.0
5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=+15V, chip
2800
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C, chip
10
2400
Collector current : Ic [A]
Tj=25°C
Tj=125°C
8
2000
1600
1200
800
400
0
0.0
6
4
Ic=2400A
Ic=1200A
Ic=600A
2
0
1.0
2.0
3.0
4.0
5.0
5
10
15
20
25
Collector-Emitter voltage : VCE [V]
Gate-Emitter voltage : VGE [V]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25°C
1000
Capacitance : Cies, Coes, Cres [nF]
Collector-Emitter voltage : VCE [V]
Dynamic Gate charge (typ.)
Tj=25°C
1000
800
600
400
200
0
VCE
VGE
25
20
15
10
5
0
5000
Gate-Emitter voltage : VGE [V]
Cies
100
10
Cres
Coes
1
0
10
20
30
Collector-Emitter voltage : VCE[V]
0
1000
2000
3000
4000
Gate charge : Qg [nC]
2
2MBI1200U4G-170
IGBT Modules
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rgon=4.7Ω, Rgoff=1.2Ω, Tj=125°C
4.0
Switching time : ton, tr, toff, tf [us]
Switching time : ton, tr, toff, tf [us]
Switching time vs. Gate resistance (typ.)
Vcc=900V, Ic=1200A, VGE=±15V, Tj=125°C
6.0
5.0
4.0
3.0
2.0
1.0
tf
0.0
2000
0
2
4
6
8
10
12
14
toff
tr
ton
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
400
800
1200
1600
Collector current : Ic [A]
ton
tr
toff
tf
Gate resistance : Rg [Ω]
Switching loss vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rgon=4.7Ω, Rgoff=1.2Ω, Tj=125°C
1000
Switching loss : Eon, Eoff, Err [mJ/pulse]
Switching loss : Eon, Eoff, Err [mJ/pulse]
Switching loss vs. Gate resistance (typ.)
Vcc=900V, Ic=1200A, VGE=±15V, Tj=125°C
1100
1000
900
800
700
600
500
400
300
200
100
0
0
2
4
6
8
10
12
14
Gate resistance : Rg [Ω]
Err
Eoff
900
800
700
600
500
400
300
200
100
0
0
400
800
1200
1600
Eon
Eoff
Eon
Err
2000
Collector current : Ic [A], Forward current : IF [A]
Reverse bias safe operating area (max.)
±VGE=15V, Tj=125°C/chip
2800
2400
Collector current : Ic [A]
2000
1600
1200
800
400
0
0
400
800
1200
1600
2000
Collector-Emitter voltage : VCE [V]
3
2MBI1200U4G-170
IGBT Modules
Forward current vs. Forward on voltage (typ.)
chip
2800
Reverse recovery current : Irr [A]
Reverse recovery characteristics (typ.)
Vcc=900V, VGE=±15V, Rgon=4.7Ω, Tj=125°C
1200
1.2
Irr
1.1
0.9
0.8
0.7
0.6
trr
0.5
0.4
0.3
0.2
0.1
0
400
800
1200
1600
0.0
2000
Reverse recovery time : trr [us]
2400
Forward current : IF [A]
Tj=25°C
Tj=125°C
1100
1000
900
800
700
600
500
400
300
200
100
0
1.0
2000
1600
1200
800
400
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Forward on voltage : VF [V]
Forward current : IF [A]
Transient thermal resistance (max.)
0.1000
Thermal resistanse : Rth (j-c) [°C/W]
FWD
IGBT
0.0100
0.0010
0.0001
0.001
0.010
0.100
1.000
Pulse width : Pw [sec]
4
2MBI1200U4G-170
IGBT Modules
Outline Drawings, mm
Equivalent Circuit Schematic
main emitter
main collector
E1
sense emitter
C2
C2
sense collector
E1
gate
sense collector
G1
C1
C1
main collector
G2
E2
E2
main emitter
gate
sense emitter
5
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