Preliminary
Datasheet
RJK0395DPA
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 5.9 m
typ. (at V
GS
= 10 V)
Pb-free
Halogen-free
REJ03G1786-0210
Rev.2.10
May 12, 2010
Outline
RENESAS Package code: PWSN0008DC-A
(Package name: WPAK(2))
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
ch-c
Note3
Tch
Tstg
Ratings
30
±20
30
120
30
12
14.4
30
4.17
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
REJ03G1786-0210 Rev.2.10
May 12, 2010
Page 1 of 6
RJK0395DPA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
5.9
7.6
80
1670
225
115
2.2
11
5.0
2.6
9.7
4.9
42
5.4
0.86
15
Max
—
± 0.1
1
2.5
7.7
10.6
—
—
—
—
—
—
—
—
—
—
—
—
1.12
—
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
= ±20 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 15 A, V
GS
= 10 V
Note4
I
D
= 15 A, V
GS
= 4.5 V
Note4
I
D
= 15 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 30 A
V
GS
= 10 V, I
D
= 15 A
V
DD
10 V
R
L
= 0.67
Rg = 4.7
I
F
= 30 A, V
GS
= 0
Note4
I
F
=30 A, V
GS
= 0
di
F
/ dt = 100 A/
s
REJ03G1786-0210 Rev.2.10
May 12, 2010
Page 2 of 6
RJK0395DPA
Preliminary
Main Characteristics
Power vs. Temperature Derating
40
1000
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
30
100
10
μ
s
10
0
μ
s
1
m
20
10
s
PW = 10 ms
DC
Op
10
1
Operation in
this area is
limited by R
DS(on)
era
tio
0
50
100
150
200
Tc = 25 °C
0.1
1 shot Pulse
0.1
1
10
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
n
100
Typical Output Characteristics
20
4.5 V
10 V
20
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Pulse Test
3.0 V
Drain Current I
D
(A)
3.2 V
12
Drain Current I
D
(A)
16
16
12
8
V
GS
= 2.8 V
8
4
4
Tc = 75°C
25°C
–25°C
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
Static Drain to Source On State Resistance
vs. Drain Current
100
Drain to Source Saturation Voltage
V
DS(on)
(mV)
400
Pulse Test
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
Pulse Test
30
300
200
10
V
GS
= 4.5 V
10 V
I
D
= 20 A
100
10 A
5A
3
0
4
8
12
16
20
1
1
3
10
30
100
300 1000
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
REJ03G1786-0210 Rev.2.10
May 12, 2010
Page 3 of 6
RJK0395DPA
Static Drain to Source On State Resistance
vs. Temperature
25
Pulse Test
10000
3000
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
Capacitance C (pF)
20
1000
300
Ciss
15
I
D
= 5 A, 10 A, 20 A
V
GS
= 4.5 V
10
Coss
100
Crss
30
10
0
V
GS
= 0
f = 1 MHz
10
20
30
5
0
–25
10 V
5 A, 10 A, 20 A
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
50
Reverse Drain Current vs.
Source to Drain Voltage
20
50
Reverse Drain Current I
DR
(A)
I
D
= 30 A
V
GS
V
DD
= 25 V
10 V
10 V
40
5V
Pulse Test
40
16
30
V
DS
12
30
20
V
DD
= 25 V
10 V
8
20
V
GS
= 0, –5 V
10
4
10
0
0
8
16
24
32
0
40
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nc)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
20
I
AP
= 12 A
V
DD
= 15 V
duty < 0.1%
Rg
≥
50
Ω
16
12
8
4
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
REJ03G1786-0210 Rev.2.10
May 12, 2010
Page 4 of 6
RJK0395DPA
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Preliminary
1
D=1
0.5
0.3
0.2
0.1
5
0.0
1s
ho
tp
ul
se
0.1
θch
– c(t) =
γs
(t) •
θch
– c
θch
– c = 4.17°C/W, Tc = 25°C
P
DM
PW
T
0.
02
0.03
01
0.
D=
PW
T
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform
1
2
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
Rg
D. U. T
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
I
D
Vin
15 V
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 10 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
REJ03G1786-0210 Rev.2.10
May 12, 2010
Page 5 of 6
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
