Preliminary
Datasheet
RJK0393DPA
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 3.3 m
typ. (at V
GS
= 10 V)
Pb-free
Halogen-free
REJ03G1784-0220
Rev.2.20
May 21, 2010
Outline
RENESAS Package code: PWSN0008DC-A
(Package name: WPAK(2))
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
ch-C
Tch
Tstg
Ratings
30
20
40
160
40
16
25.6
40
3.13
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
REJ03G1784-0220 Rev.2.20
May 21, 2010
Page 1 of 6
RJK0393DPA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
3.3
4.2
100
3270
430
225
1.4
21
9.5
4.7
13.2
6.0
52
7.1
0.83
23.5
Max
—
0.1
1
2.5
4.3
5.9
—
—
—
—
—
—
—
—
—
—
—
—
1.08
—
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
=
20
V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 20 A, V
GS
= 10 V
Note4
I
D
= 20 A, V
GS
= 4.5 V
Note4
I
D
= 20 A, V
DS
= 10 V
Note4
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
V
DD
= 10 V, V
GS
= 4.5 V,
I
D
= 40 A
V
GS
= 10 V, I
D
= 20 A,
V
DD
10 V, R
L
= 0.5
,
Rg = 4.7
IF = 40 A, V
GS
= 0
Note4
IF = 40 A, V
GS
= 0
di
F
/ dt = 100 A/
s
REJ03G1784-0220 Rev.2.20
May 21, 2010
Page 2 of 6
RJK0393DPA
Preliminary
Main Characteristics
Power vs. Temperature Derating
80
1000
10
μs
100
Maximum Safe Operation Area
Channel Dissipation Pch (W)
60
Drain Current I
D
(A)
s
0
μ
s
10
1m
10
ms
40
10
Operation in
1 this area is
limited by R
DS(on)
Tc = 25 °C
1 shot Pulse
0.3
1
3
DC
Op
20
era
tio
n
0
50
100
150
200
0.1
0.1
10
30
100
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
10 V
2.9 V
50
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
4.5 V
2.7 V
Drain Current I
D
(A)
40
40
30
30
25°C
Tc = 75°C
10
–25°C
20
2.5 V
10
20
V
GS
= 2.4 V
Pulse Test
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
Static Drain to Source On State Resistance
vs. Drain Current
100
Pulse Test
50
Drain to Source Saturation Voltage
V
DS(on)
(mV)
200
Pulse Test
160
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
120
20
10
V
GS
= 4.5 V
5
2
1
1
3
10
30
100
300
1000
10 V
80
I
D
= 20 A
10 A
5A
40
0
4
8
12
16
20
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
REJ03G1784-0220 Rev.2.20
May 21, 2010
Page 3 of 6
RJK0393DPA
Static Drain to Source On State Resistance
vs. Temperature
10
Pulse Test
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
10000
Ciss
I
D
= 5 A, 10 A, 20 A
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
Capacitance C (pF)
8
3000
1000
Coss
6
V
GS
= 4.5 V
4
5 A, 10 A, 20 A
2
0
–25
10 V
300
100
30
10
V
GS
= 0
f = 1 MHz
Crss
0
25
50
75
100 125 150
0
10
20
30
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
50
Reverse Drain Current vs.
Source to Drain Voltage
20
50
Gate to Source Voltage V
GS
(V)
Reverse Drain Current I
DR
(A)
I
D
= 40 A
V
GS
V
DS
V
DD
= 25 V
10 V
10 V
40
5V
40
16
30
12
30
V
GS
= 0, –5 V
20
8
20
10
V
DD
= 25 V
10 V
10
20
30
40
4
0
50
10
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
0
Gate Charge Qg (nc)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
50
I
AP
= 16 A
V
DD
= 15 V
duty < 0.1%
Rg
≥
50
Ω
40
30
20
10
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
REJ03G1784-0220 Rev.2.20
May 21, 2010
Page 4 of 6
RJK0393DPA
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
10
Preliminary
D=1
1
0.5
0.2
0.1
0.1
0.05
0.02
lse
1
0.0
t pu
ho
1s
θch
– c(t) =
γs
(t) •
θch
– c
θch
– c = 3.13°C/W, Tc = 25°C
P
DM
PW
T
D=
PW
T
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
E
AR
=
Avalanche Waveform
1
2
L
•
I
AP
2
•
V
DSS
V
DSS –
V
DD
V
(BR)DSS
V
DS
Monitor
L
I
AP
Monitor
I
AP
V
DS
V
DD
I
D
Rg
D. U. T
Vin
15 V
50
Ω
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 10 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
90%
td(off)
tf
tr
REJ03G1784-0220 Rev.2.20
May 21, 2010
Page 5 of 6
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