Preliminary
Datasheet
RJL5015DPK
Silicon N Channel MOS FET
High Speed Power Switching
Features
Built-in fast recovery diode
Low on-resistance
R
DS(on)
= 0.23
typ. (at I
D
= 11 A, V
GS
= 10 V, Ta = 25C)
Low leakage current
High speed switching
REJ03G1912-0100
Rev.1.00
May 27, 2010
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
D
G
1. Gate
2. Drain (Flange)
3. Source
1
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
AR
Pch
Note2
ch-c
Tch
Tstg
Note3
Ratings
500
±30
22
66
22
66
7
2.7
150
0.833
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
REJ03G1912-0100 Rev.1.00
May 27, 2010
Page 1 of 6
RJL5015DPK
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
500
—
—
1.5
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.23
2400
264
32
36
28
108
50
66
12
29
0.91
140
Max
—
10
±0.1
4.0
0.27
—
—
—
—
—
—
—
—
—
—
1.55
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 500 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 11 A, V
GS
= 10 V
Note4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 11 A
V
GS
= 10 V
R
L
= 22.7
Rg = 10
V
DD
= 400 V
V
GS
= 10 V
I
D
= 22 A
I
F
= 22 A, V
GS
= 0
Note4
I
F
= 22 A, V
GS
= 0
di
F
/dt = 100 A/s
REJ03G1912-0100 Rev.1.00
May 27, 2010
Page 2 of 6
RJL5015DPK
Preliminary
Main Characteristics
Maximum Safe Operation Area
100
Typical Output Characteristics
50
Ta = 25°C
Pulse Test
10 V
5.4 V
5.2 V
5V
20
10
μ
s
I
D
(A)
Drain Current
I
D
(A)
10
40
1
PW =
00
μ
s
30
Drain Current
1
Operation in this
area is limited by
R
DS(on)
Tc = 25°C
1 shot
1
10
4.8 V
4.6 V
4.4 V
V
GS
= 4 V
0
4
8
12
16
20
0.1
10
0.01
0.1
100
1000
0
Drain to Source Voltage
V
DS
(V)
Drain to Source Voltage
V
DS
(V)
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
100
10
V
GS
= 10 V
Ta = 25°C
Pulse Test
I
D
(A)
10
Drain Current
1
Tc = 75°C
25°C
−25°C
1
0.1
0.01
0.1
1
10
100
0
2
4
6
8
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
0.8
Body-Drain Diode Reverse
Recovery Time (Typical)
0.6
I
D
= 22 A
0.4
3A
11 A
0.2
Reverse Recovery Time trr (ns)
V
GS
= 10 V
Pulse Test
1000
100
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
10
1
10
100
0
-25
0
25
50
75
100 125 150
Case Temperature
Tc (°C)
Reverse Drain Current
I
DR
(A)
REJ03G1912-0100 Rev.1.00
May 27, 2010
Page 3 of 6
RJL5015DPK
Typical Capacitance vs.
Drain to Source Voltage
V
DS
(V)
10000
Ciss
Preliminary
Dynamic Input Characteristics (Typical)
V
GS
(V)
Gate to Source Voltage
800
V
GS
V
DD
= 400 V
250 V
100 V
V
DS
16
Capacitance C (pF)
1000
600
12
100
Coss
Drain to Source Voltage
400
8
Crss
10
V
GS
= 0
f = 1 MHz
Ta = 25°C
50
100
150
200
250
200
V
DD
= 400 V
250 V
100 V
0
20
40
60
I
D
= 22 A
Ta = 25°C
80
4
1
0
0
0
100
Drain to Source Voltage
V
DS
(V)
Gate Charge
Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
50
4
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
I
DR
(A)
Gate to Source Cutoff Voltage
V
GS(off)
(V)
40
V
GS
= 0 V
Ta = 25°C
Pulse Test
I
D
= 10 mA
3
Reverse Drain Current
30
2
1 mA
0.1 mA
20
10
1
V
DS
= 10 V
0
-25
0
25
50
75
100 125 150
0
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage
V
SD
(V)
Case Temperature
Tc (°C)
REJ03G1912-0100 Rev.1.00
May 27, 2010
Page 4 of 6
RJL5015DPK
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
Preliminary
1
D=1
0.5
0.3
0.2
0.1
0.1
θ
ch – c (t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 0.833
°
C/W, Tc = 25
°
C
P
DM
PW
T
0.05
D=
0.03
0.02
1
0.0
PW
T
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
Pulse Width
PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 250 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
REJ03G1912-0100 Rev.1.00
May 27, 2010
Page 5 of 6
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