Preliminary
Datasheet
RJK6006DPD
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-state resistance
R
DS(on)
= 1.4
typ. (at I
D
= 2.5 A, V
GS
= 10 V, Ta = 25C)
High speed switching
REJ03G1935-0100
Rev.1.00
Jun 01, 2010
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
4
1.
2.
3.
4.
Gate
Drain
Source
Drain
D
G
12
3
S
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
PW
10 s,
duty cycle
1%
Value at Tc = 25C
STch = 25C, Tch
150C
Limited by maximum safe operation area
Symbol
V
DSS
V
GSS
I
D Note4
I
D (pulse)
I
DR
Note1
I
DR (pulse)
Note3
I
AP
Note3
E
AR
Pch
Note 2
ch-c
Tch
Tstg
Note1
Value
600
30
5
15
5
15
5
2
77.6
1.61
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
REJ03G1935-0100 Rev.1.00
Jun 01, 2010
Page 1 of 6
RJK6006DPD
Preliminary
Electrical Characteristics
(Ta = 25C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note:
5. Pulse test
Symbol
V
(BR) DSS
I
DSS
I
GSS
V
GS (off)
R
DS (on)
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
600
—
—
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
1.4
600
70
10
25
17
60
10
19
3.4
9.2
0.9
250
Max
—
1
0.1
4.5
1.6
—
—
—
—
—
—
—
—
—
—
1.5
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 600 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 2.5 A, V
GS
= 10 V
Note 5
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 2.5 A
V
GS
= 10 V
R
L
= 80
Rg = 10
V
DD
= 480 V
V
GS
= 10 V
I
D
= 5 A
I
F
= 5 A, V
GS
= 0
Note 5
I
F
= 5 A, V
GS
= 0
di
F
/dt = 100 A/s
REJ03G1935-0100 Rev.1.00
Jun 01, 2010
Page 2 of 6
RJK6006DPD
Preliminary
Main Characteristics
Maximum Safe Operation Area
100
10
Typical Output Characteristics
Ta = 25°C
Pulse Test
Drain Current I
D
(A)
=
Drain Current I
D
(A)
10
PW
10
μ
s
8
10
0
7V
10 V
6V
5.8 V
5.6 V
5.4 V
5.2 V
5V
V
GS
= 4.8 V
1
Operation in this
area is limited by
R
DS(on)
Tc = 25°C
1 shot
1
10
100
μ
s
6
0.1
4
0.01
2
0.001
0.1
1000
0
0
4
8
12
16
20
Drain to Source Voltage V
DS
(V)
Drain to Source Voltage V
DS
(V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
10
V
GS
= 10 V
Ta = 25°C
Pulse Test
Typical Transfer Characteristics
10
V
DS
= 10 V
Pulse Test
Tc =
−25°C
Drain Current I
D
(A)
8
25°C
6
75°C
4
1
2
0
0.1
1
10
100
0
2
4
6
8
10
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
V
GS
= 10 V
Pulse Test
4
I
D
= 5 A
3
1A
2.5 A
1
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Body-Drain Diode Reverse
Recovery Time (Typical)
1000
Reverse Recovery Time trr (ns)
5
100
2
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
10
1
10
100
0
-25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Reverse Drain Current I
DR
(A)
REJ03G1935-0100 Rev.1.00
Jun 01, 2010
Page 3 of 6
RJK6006DPD
Typical Capacitance vs.
Drain to Source Voltage (Typical)
Drain to Source Voltage V
DS
(V)
10000
V
GS
= 0
f = 1 MHz
Ta = 25°C
Ciss
Preliminary
Dynamic Input Characteristics (Typical)
I
D
= 5 A
Ta = 25
°C
V
GS
1000
600
V
DS
400
V
DD
= 480 V
300 V
100 V
12
100
Coss
10
Crss
1
0
8
200
V
DD
= 480 V
300 V
100 V
8
16
24
32
4
0
40
100
200
300
0
Drain to Source Voltage V
DS
(V)
Gate Charge Qg (nC)
16
Gate to Source Cutoff Voltage V
GS(off)
(V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Reverse Drain Current I
DR
(A)
V
GS
= 0
Ta = 25
°C
Pulse Test
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
V
DS
= 10 V
12
4
3
8
I
D
= 10 mA
1 mA
0.1 mA
2
1
4
0
0
0.4
0.8
1.2
1.6
2.0
0
-25
0
25
50
75
100 125 150
Source to Drain Voltage V
SD
(V)
Case Temperature
Tc (°C)
REJ03G1935-0100 Rev.1.00
Jun 01, 2010
Page 4 of 6
Gate to Source Voltage V
GS
(V)
800
16
Capacitance C (pF)
RJK6006DPD
Transient Thermal Impedance vs. Pulse Width
Transient Thermal Impedance
θ
ch-c (
°
C/W)
10
T
C
= 25°C
Preliminary
1
ep
ngl
uls
e
Si
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 200 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
REJ03G1935-0100 Rev.1.00
Jun 01, 2010
Page 5 of 6
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