Preliminary
Datasheet
RJK5030DPD
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-state resistance
R
DS(on)
= 1.3
typ. (at I
D
= 2 A, V
GS
= 10 V, Ta = 25C)
High speed switching
REJ03G1913-0100
Rev.1.00
Apr 12, 2010
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
4
1.
2.
3.
4.
Gate
Drain
Source
Drain
D
G
12
3
S
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
Note3
I
AP
Pch
Note 2
ch-c
Tch
Tstg
Note1
Value
500
30
5
20
5
41.7
3.0
150
–55 to +150
Unit
V
V
A
A
A
W
C/W
C
C
REJ03G1913-0100 Rev.1.00
Apr 12, 2010
Page 1 of 5
RJK5030DPD
Preliminary
Electrical Characteristics
(Ta = 25C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
V
(BR) DSS
I
DSS
I
GSS
V
GS (off)
R
DS (on)
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
V
DF
t
rr
Min
500
—
—
3.5
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
1.3
550
60
10
15
20
90
30
0.9
250
Max
—
10
0.1
4.5
1.6
—
—
—
—
—
—
—
1.5
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 1 mA, V
GS
= 0
V
DS
= 500 V, V
GS
= 0
V
GS
=
25
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 2 A, V
GS
= 10 V
Note 4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
V
DD
= 200 V
I
D
= 2 A
V
GS
= 10 V
Rg = 25
I
F
= 5 A, V
GS
= 0
Note 4
I
F
= 5 A, V
GS
= 0
V
DD
= 250 V
di
F
/dt = 100 A/s
Note:
4. Pulse test
REJ03G1913-0100 Rev.1.00
Apr 12, 2010
Page 2 of 5
RJK5030DPD
Preliminary
Main Characteristics
Maximum Safe Operation Area
100
10
μ
s
Typical Output Characteristics
10
Ta = 25°C
Pulse Test
8V 7V
10 V
20 V
6.7 V
6
6.4 V
6.1 V
5.8 V
2
0
0
4
8
12
16
20
5.4 V
V
GS
= 5 V
I
D
(A)
Drain Current
1000
I
D
(A)
10
PW
8
=
10
0
1
μ
s
Drain Current
0.1
0.01
Operation in this
area is limited by
R
DS(on)
Tc = 25°C
1 shot
1
10
100
4
0.001
0.1
Drain to Source Voltage
V
DS
(V)
Drain to Source Voltage
V
DS
(V)
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Tc =
−25°C
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
10
10
I
D
(A)
Drain Current
8
6
25°C
4
75°C
2
1
V
GS
= 10 V
Ta = 25°C
Pulse Test
0.1
1
10
100
0
0
2
4
6
8
10
12
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
5
V
GS
= 10 V
Ta = 25°C
Pulse Test
I
D
= 5 A
3
2A
1A
1
1000
Body-Drain Diode Reverse
Recovery Time (Typical)
Reverse Recovery Time trr (ns)
4
100
2
0
−25
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
10
1
10
100
0
25
50
75
100 125 150
Case Temperature
Tc (°C)
Reverse Drain Current
I
DR
(A)
REJ03G1913-0100 Rev.1.00
Apr 12, 2010
Page 3 of 5
RJK5030DPD
Typical Capacitance vs.
Drain to Source Voltage
V
DS
(V)
1000
Ciss
Preliminary
Dynamic Input Characteristics (Typical)
I
D
= 5 A
Ta = 25°C
Capacitance C (pF)
600
V
DS
12
V
DD
= 100 V
200 V 8
400 V
Drain to Source Voltage
Coss
10
Crss
V
GS
= 0
f = 1 MHz Tc = 25°C
1
0
50
100
150
200
250
400
200
V
DD
= 400 V
200 V
100 V
4
8
12
16
4
0
0
20
Drain to Source Voltage
V
DS
(V)
Gate Charge
Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
20
5
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
I
D
= 10 mA
4
I
DR
(A)
16
Reverse Drain Current
Gate to Source Cutoff Voltage
V
GS(off)
(V)
V
GS
= 0
Ta = 25°C
Pulse Test
12
3
1 mA
0.1 mA
8
4
2
1
V
DS
= 10 V
0
-25
0
25
50
75
100 125 150
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage
V
SD
(V)
Case Temperature
Tc (°C)
Thermal Impedance vs. Pulse Width
Thermal Impedance
θ
ch – c (°C/W)
100
Tc = 25°C
Single pulse
10
1
0.1
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
Pulse Width PW (s)
REJ03G1913-0100 Rev.1.00
Apr 12, 2010
Page 4 of 5
Gate to Source Voltage
100
V
GS
(V)
800
V
GS
16
RJK5030DPD
Preliminary
Package Dimensions
Package Name
MP-3A
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZG-A
Previous Code
TMP3
MASS[Typ.]
0.32g
Unit: mm
1 ± 0.2
6.6
5.3 ± 0.2
2.3
0.5 ± 0.2
6.1 ± 0.2
10.4Max
0.1 ± 0.1
1Max
2.5Min
0.76 ± 0.2
0.76
0.5 ± 0.2
2.3 ± 0.2
2.3
Ordering Information
Part No.
RJK5030DPD-00
Quantity
3000 pcs
Taping
Shipping Container
REJ03G1913-0100 Rev.1.00
Apr 12, 2010
1
1.4 ± 0.2
Page 5 of 5
综合技术交流
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
