Preliminary
Datasheet
RJK0208DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode
REJ03G1924-0200
Power Switching
Rev.2.00
Apr 27, 2010
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 1.6 m
typ. (at V
GS
= 10 V)
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DC-A
(Package name: WPAK(2))
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
ch-c
Note3
Tch
Tstg
Ratings
25
±20
65
260
65
29
105
60
2.08
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
REJ03G1924-0200 Rev.2.00
Apr 27, 2010
Page 1 of 6
RJK0208DPA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
25
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
1.6
2.1
125
5350
1290
530
1.6
36.0
15.3
10.0
21
8
80
17
0.39
45
Max
—
± 0.5
1
2.5
2.0
2.7
—
7490
—
—
3.2
—
—
—
—
—
—
—
—
—
Unit
V
A
mA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
= ±20 V, V
DS
= 0
V
DS
= 25 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 32.5A, V
GS
= 10 V
Note4
I
D
= 32.5A, V
GS
= 4.5 V
Note4
I
D
= 32.5A, V
DS
= 5 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 65 A
V
GS
= 10 V, I
D
= 32.5 A
V
DD
10 V
R
L
= 0.31
Rg = 4.7
I
F
= 2 A, V
GS
= 0
Note4
I
F
=65 A, V
GS
= 0
di
F
/ dt = 100 A/
s
REJ03G1924-0200 Rev.2.00
Apr 27, 2010
Page 2 of 6
RJK0208DPA
Preliminary
Main Characteristics
Power vs. Temperature Derating
80
1000
Maximum Safe Operation Area
10
Channel Dissipation Pch (W)
Drain Current I
D
(A)
10
100
PW = 10 ms
10
60
0
μ
s
1
m
μ
s
s
40
DC
Operation in
this area is
limited by R
DS(on)
Tc = 25 °C
1 shot Pulse
1
10
100
Op
era
20
1
tio
n
0
50
100
150
200
0.1
0.1
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
100
4.5 V
10 V
3.1 V
100
Typical Transfer Characteristics
V
DS
= 5 V
Pulse Test
Pulse Test
Drain Current I
D
(A)
60
2.7 V
40
Drain Current I
D
(A)
80
2.9 V
80
60
40
20
V
GS
= 2.5 V
20
25°C
Tc = 75°C
–25°C
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
Static Drain to Source On State Resistance
vs. Drain Current
100
Drain to Source Saturation Voltage
V
DS(on)
(mV)
160
Pulse Test
120
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
Pulse Test
30
80
10
40
I
D
= 20 A
10 A
5A
3
V
GS
= 4.5 V
10 V
3
10
30
100
300 1000
0
4
8
12
16
20
1
1
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
REJ03G1924-0200 Rev.2.00
Apr 27, 2010
Page 3 of 6
RJK0208DPA
Static Drain to Source On State Resistance
vs. Temperature
5
Pulse Test
10000
3000
I
D
= 5 A, 10 A, 20 A
3
V
GS
= 4.5 V
2
10 V
5 A, 10 A, 20 A
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
Capacitance C (pF)
4
Ciss
1000
300
100
30
10
Coss
Crss
1
0
–25
V
GS
= 0
f = 1 MHz
0
5
10
15
20
25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
50
Reverse Drain Current vs.
Source to Drain Voltage
20
100
Gate to Source Voltage V
GS
(V)
Reverse Drain Current I
DR
(A)
I
D
= 65 A
10 V
80
5V
Pulse Test
40
V
GS
30
V
DS
20
V
DD
= 20 V
10 V
16
12
60
8
40
V
GS
= 0, –5 V
10
V
DD
= 20 V
10 V
0
20
40
60
80
4
20
0
0
100
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nc)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
150
I
AP
= 29 A
V
DD
= 15 V
duty < 0.1%
Rg
≥
50
Ω
120
90
60
30
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
REJ03G1924-0200 Rev.2.00
Apr 27, 2010
Page 4 of 6
RJK0208DPA
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Preliminary
1
D=1
0.5
0.3
0.2
0.1
0.1
θch −
c(t) =
γs
(t)
• θch −
c
θch −
c = 2.08°C/W, Tc = 25°C
P
DM
PW
T
0.05
0.03
2
lse
0.0
pu
1
0.0
hot
1s
D=
PW
T
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform
1
2
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
Rg
D. U. T
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
I
D
Vin
15 V
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 10 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
REJ03G1924-0200 Rev.2.00
Apr 27, 2010
Page 5 of 6
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