Datasheet
RJJ0315DPA
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 4.8 m
typ. (at V
GS
= -10 V)
Pb-free
Halogen-free
REJ03G1920-0200
Rev.2.00
Apr 27, 2010
Outline
RENESAS Package code: PWSN0008DC-A
(Package name: WPAK(2))
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
S S S
1 2 3
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
10s, duty cycle
1 %
2. Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Note2
Tch
Tstg
Note1
Ratings
–30
-20/+10
–35
–140
–35
30
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
REJ03G1920-0200 Rev.2.00
Apr 27, 2010
Page 1 of 6
RJJ0315DPA
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
–30
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
4.8
6.8
50
4300
930
880
48
14
20
21
45
115
71
–0.87
100
Max
—
0.1
–1
–2.5
5.9
10
—
—
—
—
—
—
—
—
—
—
—
–1.13
—
Unit
V
A
A
V
m
m
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= –10mA, V
GS
= 0
V
GS
= –20,+10V, V
DS
= 0
V
DS
= –30V, V
GS
= 0
V
DS
= –10V, I
D
= –1mA
I
D
= –17.5A, V
GS
= –10V
Note4
I
D
= –17.5A, V
GS
= –4.5V
Note4
I
D
= –17.5A, V
DS
= –10V
Note4
V
DS
= –10V
V
GS
= 0
f = 1MHz
V
DD
= –10 V
V
GS
= –4.5 V
I
D
= –35 A
V
GS
= –10V, I
D
= –17.5A
V
DD
–10V
R
L
= 0.57
R
g
= 4.7
IF = –35 A, V
GS
= 0
Note4
IF =–35 A, V
GS
= 0
diF/ dt = –100A/µs
REJ03G1920-0200 Rev.2.00
Apr 27, 2010
Page 2 of 6
RJJ0315DPA
Main Characteristics
Power vs. Temperature Derating
40
-1000
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
30
-100
1m
-10
s
20
PW = 10 ms
10
-1
Operation in
this area is
limited by R
DS(on)
DC
Op
er
at
ion
0
50
100
150
200
Tc = 25 °C
-0.1
1 shot Pulse
-0.1
-1
-10
-100
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
-50
-4.5 V
-10 V
-3.1 V
-50
Typical Transfer Characteristics
V
DS
= -10 V
Pulse Test
Pulse Test
Drain Current I
D
(A)
-2.9 V
-30
Drain Current I
D
(A)
-40
-40
-30
-20
-2.7 V
-20
-10
-10
V
GS
= -2.5 V
0
-2
-4
-6
-8
-10
0
Tc = 75°C
25°C
–25°C
-1
-2
-3
-4
-5
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(mV)
-320
Gate to Source Voltage V
GS
(V)
Static Drain to Source On State Resistance
vs. Drain Current
100
Pulse Test
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
Pulse Test
30
-240
-160
10
V
GS
= -4.5 V
-10 V
-80
I
D
= -20 A
-10
A
-5
A
3
0
-4
-8
-12
-16
-20
1
-1
-3
-10
-30
-100
-300 -1000
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
REJ03G1920-0200 Rev.2.00
Apr 27, 2010
Page 3 of 6
RJJ0315DPA
Static Drain to Source On State Resistance
vs. Temperature
20
Pulse Test
10000
3000
Ciss
Coss
Crss
Static Drain to Source On State Resistance
R
DS(on)
(m)
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
16
I
D
= -5 A, -10A, -20 A
V
GS
= -4.5 V
1000
300
100
30
10
0
V
GS
= 0
f = 1 MHz
-10
-20
12
8
4
0
–25
-10 V
-5 A, -10A, -20 A
0
25
50
75
100 125 150
-30
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
0
V
DD
= -25 V
-10 V
-5 V
0
-50
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I
DR
(A)
-10 V
-40
-5 V
Pulse Test
-10
-4
-20
V
DS
V
DD
= -25 V
-10 V
-5 V
I
D
= -35 A
0
40
80
120
160
-8
-30
-30
-12
V
GS
-20
V
GS
= 0, 5 V
-40
-16
-10
-50
-20
200
0
-0.4
-0.8
-1.2
-1.6
-2.0
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
1000
100
Tc = -25°C
10
25°C
75°C
1
0.1
-0.1 -0.3
V
DS
= -10 V
Pulse Test
-1
-3
-10
-30
-100
Drain Current I
D
(A)
REJ03G1920-0200 Rev.2.00
Apr 27, 2010
Page 4 of 6
RJJ0315DPA
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
1
D=1
0.5
0.3
0.2
0.1
0.1
θch −
c(t) =
γs
(t)
• θch −
c
θch −
c = 4.17°C/W, Tc = 25°C
P
DM
0.05
0.03
0
.02
.01
0
h
1s
o
u
tp
lse
D=
PW
T
PW
T
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin
Vin Monitor
D.U.T.
Rg
R
L
Vout
Monitor
Switching Time Waveform
10%
90%
90%
90%
Vin
-10 V
V
DS
= -10 V
Vout
td(on)
10%
tr
td(off)
10%
tf
REJ03G1920-0200 Rev.2.00
Apr 27, 2010
Page 5 of 6
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