Preliminary
Datasheet
RJH60F7ADPK
Silicon N Channel IGBT
High Speed Power Switching
Features
Low collector to emitter saturation voltage
V
CE(sat)
= 1.35 V typ. (at I
C
= 50 A, V
GE
= 15V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
t
f
= 95 ns typ. (at I
C
= 30 A, Resistive Load, V
CC
= 300 V, V
GE
= 15 V, Rg = 5
,
Ta = 25°C)
REJ03G1837-0200
Rev.2.00
Jun 11, 2010
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Colloector (Flange)
E
1
2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW
5
s,
duty cycle
1%
Symbol
V
CES
V
GES
I
C
I
C
ic(peak)
Note1
i
DF
(peak)
Note2
P
C
j-c
j-c
Tj
Tstg
Ratings
600
±30
90
50
180
100
328.9
0.38
2.0
150
–55 to +150
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
REJ03G1837-0200 Rev.2.00
Jun 11, 2010
Page 1 of 6
RJH60F7ADPK
Preliminary
Electrical Characteristics
(Tj = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Symbol
I
CES
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
t
d(on)
t
r
t
d(off)
t
f
V
ECF1
t
rr
Min
4
Typ
1.35
1.6
4700
198
83
48
30
110
95
1.6
140
Max
100
±1
8
1.75
2.1
Unit
A
A
V
V
V
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
V
CE
= 600V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10V, I
C
= 1 mA
I
C
= 50 A, V
GE
= 15V
Note3
I
C
= 90 A, V
GE
= 15V
Note3
V
CE
= 25 V
V
GE
= 0 V
f = 1 MHz
I
C
= 30 A, Resistive Load
V
CC
= 300 V
V
GE
= 15 V
Note3
Rg = 5
I
F
= 20 A
Note3
C-E diode forward voltage
C-E diode reverse recovery time
Notes: 3. Pulse test
I
F
= 20 A
di
F
/dt = 100 A/s
REJ03G1837-0200 Rev.2.00
Jun 11, 2010
Page 2 of 6
RJH60F7ADPK
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
160
Typical Output Characteristics
Pulse Test
Ta = 25
°
C
10 V
120
15 V
8.8 V
80
8.6 V
8.4 V
40
8.2 V
V
GE
= 8 V
9.4 V
9.6 V
9.8 V
9.2 V
9V
Collector Current I
C
(A)
100
PW
=
10
μ
s
10
1
Tc = 25°C
Single pulse
0.1
1
Collector Current I
C
(A)
10
0
μ
s
0
10
100
1000
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Transfer Characteristics
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
160
Collector Current I
C
(A)
Pulse TestV
V
CE
= 10
Ta = 25
°
C
Pulse Test
7
6
5
4
3
2
1
0
6
8
10
12
14
16
18
20
I
C
= 20 A
50 A
90 A
Pulse Test
Ta = 25
°
C
120
80
Tc = 75°C
40
25°C
–25°C
0
0
2
4
6
8
10
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
8
7
I
C
= 10 mA
6
5
1 mA
4
3
2
−25
V
CE
= 10 V
Pulse Test
0
25
50
75
100 125
150
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−25
V
GE
= 15 V
Pulse Test
0
25
50
75
100 125 150
50 A
20 A
I
C
= 90 A
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Junction Temparature Tj (
°
C)
Junction Temparature Tj (
°
C)
REJ03G1837-0200 Rev.2.00
Jun 11, 2010
Page 3 of 6
RJH60F7ADPK
Preliminary
Typical Capacitance vs.
Collector to Emitter Voltage
10000
V
GE
= 0 V
Pulse Test
Ta = 25
°
C
Cies
Forward Current vs. Forward Voltage (Typical)
100
Forward Current I
F
(A)
Capacitance C (pF)
80
1000
60
40
100
Coes
V
GE
= 0 V
f = 1 MHz Ta = 25
°
C
0
50
100
150
200
Cres
20
0
0
1
2
3
4
5
10
250
300
C-E Diode Forward Voltage V
CEF
(V)
Collector to Emitter Voltage V
CE
(V)
Dynamic Input Characteristics (Typical)
Collector to Emitter Voltage V
CE
(V)
V
GE
12
V
CC
= 600 V
300 V
400
8
Switching Characteristics (Typical) (1)
Gate to Emitter Voltage V
GE
(V)
1000
800
Switching Time t (ns)
600
I
C
= 50 A
Ta = 25
°
C
V
CE
16
td(off)
100
td(on)
10
tr
tf
200
V
CC
= 600 V
300 V
0
0
40
80
120
160
4
0
200
1
1
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Ta = 25
°
C, Resistive load
10
100
1000
Gate Charge Qg (nc)
Collector Current I
C
(A)
Switching Characteristics (Typical) (2)
10000
I
C
= 50 A, R
L
= 6
Ω
V
GE
= 15 V, Ta = 25
°
C
Switching Characteristics (Typical) (3)
1000
I
C
= 50 A, V
GE
= 15 V
R
L
= 6
Ω,
Rg = 5
Ω
Switching Time t (ns)
1000
Switching Time t (ns)
td(off)
100
tf
td(on)
tr
100
td(off)
tf
10
1
td(on) tr
10
10
100
0
20
40
60
80
100 120 140
Gate Resistance Rg (Ω)
Case Temperature Tc (°C)
REJ03G1837-0200 Rev.2.00
Jun 11, 2010
Page 4 of 6
RJH60F7ADPK
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
Normalized Transient Thermal Impedance
γ
s (t)
10
Tc = 25°C
Preliminary
1
D=1
0.5
0.2
0.1
0.1
0.05
2
0.0
0.01
1 shot pulse
θ
j – c(t) =
γs
(t) •
θ
j – c
θ
j – c = 0.38°C/W, Tc = 25°C
P
DM
PW
T
1m
10 m
100 m
1
10
D=
PW
T
0.01
10
μ
100
μ
Pulse Width
PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
Normalized Transient Thermal Impedance
γ
s (t)
10
Tc = 25°C
1
D=1
0.5
0.2
0.1
0.1
0.05
2
0.0
0.01
1 shot pulse
θ
j – c(t) =
γs
(t) •
θ
j – c
θ
j – c = 2°C/W, Tc = 25°C
P
DM
PW
T
1m
10 m
100 m
1
10
D=
PW
T
0.01
10
μ
100
μ
Pulse Width
Switching Time Test Circuit
Ic Monitor
R
L
Vin Monitor
PW (s)
Waveform
90%
Vin
10%
90%
90%
Rg
Vin = 15 V
D.U.T.
V
CC
Ic
td(on)
ton
10%
tr
10%
td(off)
toff
tf
REJ03G1837-0200 Rev.2.00
Jun 11, 2010
Page 5 of 6
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