Preliminary
Datasheet
RJE0603JPE
Silicon P Channel MOS FET Series
Power Switching
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
REJ03G1907-0100
Rev.1.00
Apr 01, 2010
Features
High endurance capability against to the short circuit.
Built-in the over temperature shut-down circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
D
4
G
1
2
3
Temperature
Sensing
Circuit
Gate Resistor
Current
Limitation
Circuit
Gate
Shut-down
Circuit
1. Gate
2. Drain
3. Source
4. Drain
Latch
Circuit
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
V
DSS
Gate to source voltage
V
GSS
Gate to source voltage
V
GSS
Drain current
I
D
Body-drain diode reverse drain current
I
DR
Avalanche current
I
AP Note 1
Avalanche energy
E
AR Note 2
Channel dissipation
Pch
Note 1
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25C
2. Tch = 25C, Rg
50
3. It provides by the current limitation lower bound value.
Ratings
–60
–16
2.5
–50
Note3
–50
–15
964
100
150
–55 to +150
Unit
V
V
V
A
A
A
mJ
W
C
C
REJ03G1907-0100 Rev.1.00
Apr 01, 2010
Page 1 of 6
RJE0603JPE
Preliminary
Typical Operation Characteristics
(Ta = 25°C)
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Notes: 4. Pulse test
Symbol
V
IH
V
IL
I
IH1
I
IH2
I
IH(sd)1
I
IH(sd)2
Tsd
Vop
I
D limt
Min
–3.5
—
—
—
—
—
—
–3.5
–50
Typ
—
—
—
—
–0.3
–0.11
175
—
—
Max
—
–1.2
–100
–50
—
—
—
–12
—
Unit
V
V
A
A
mA
mA
C
V
A
Test Conditions
Vi = –8 V, V
DS
= 0
Vi = –3.5 V, V
DS
= 0
Vi = –12 V, V
DS
= 0
Vi = –4.6 V, V
DS
= 0
Channel temperature
V
GS
= –12 V, V
DS
= –10 V
Note 4
Electrical Characteristics
(Ta = 25°C)
Item
Drain current
Symbol
I
D1
I
D2
I
D3
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
V
(BR)DSS
V
(BR)GSS
V
(BR)GSS
I
GSS
I
GSS
I
GSS
I
GS(OP)1
I
GS(OP)2
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
Coss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
t
os1
Min
—
—
–50
–60
–16
2.5
—
—
—
—
—
—
–3.4
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
–0.8
–0.11
—
—
16
12
1400
77.2
72.7
7.7
7.7
0.92
133
6.3
Max
–100
–10
—
—
—
—
–200
–800
100
—
—
–10
–4.6
30
15
—
—
—
—
—
—
—
—
Unit
A
mA
A
V
V
V
A
A
A
mA
mA
A
V
m
m
pF
s
s
s
s
V
ns
ms
Test Conditions
V
GS
= –3.5 V, V
DS
= –10 V
V
GS
= –1.2 V, V
DS
= –10 V
V
GS
= –12 V, V
DS
= –10 V
Note 5
I
D
= –10 mA, V
GS
= 0
I
G
= –800
A,
V
DS
= 0
I
G
= 100
A,
V
DS
= 0
V
GS
= –8 V, V
DS
= 0
V
GS
= –16 V, V
DS
= 0
V
GS
= –2.4 V, V
DS
= 0
V
GS
= –12 V, V
DS
= 0
V
GS
= –4.6 V, V
DS
= 0
V
DS
= –60 V, V
GS
= 0
V
DS
= –10 V, I
D
= –1 mA
I
D
= –25 A, V
GS
= –6 V
Note 5
I
D
= –25 A, V
GS
= –10 V
Note 5
V
DS
= –10 V, V
GS
= 0, f =
1MHz
V
GS
= –10 V, I
D
= –25 A,
R
L
= 1.2
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Output capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse
recovery time
Over load shut down
Note 6
operation time
I
F
= –50 A, V
GS
= 0
I
F
= –50 A, V
GS
= 0
di
F
/dt = 50 A/s
V
GS
= –5 V, V
DD
= –16 V
Notes: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition.
REJ03G1907-0100 Rev.1.00
Apr 01, 2010
Page 2 of 6
RJE0603JPE
Preliminary
Main Characteristics
Power vs. Temperature Derating
160
−1000
Ta = 25°C
Maximum Safe Operation Area
Channel Dissipation Pch (W)
120
Drain Current I
D
(A)
−100
Thermal shut down operation area
PW
80
=
10
1
s
m
−10
s
m
40
DC Operation
(Tc = 25°C)
Operation
in this area
is limited R
DS(on)
0
0
50
100
150
200
−1
−0.01
−0.1
−1
−10
−100
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
−100
−80
−60
−6
V
−40
−20
Pulse Test
0
−2
−4
−6
−8
−10
V
GS
=
−4.5
V
−100
−10
−1
Typical Transfer Characteristics
Drain Current I
D
(A)
−10
V
−8
V
Drain Current I
D
(A)
150°C
−0.1
−0.01
25°C
Tc =
−40°C
V
DS
=
−10
V
Pulse Test
−2
−4
−6
−8
−10
−0.001
0
Drain to Source Voltage V
DS
(V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(mV)
−800
−700
−600
−500
−400
−300
−200
−100
0
−2
−5
A
−3 −4
−5
−6
−7
−8
−9 −10
−10
A
I
D
=
−25
A
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source On State Resistance
vs. Drain Current
1000
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
100
−6
V
10
V
GS
=
−10
V
1
Pulse Test
0.1
−0.1
−1
−10
−100
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
REJ03G1907-0100 Rev.1.00
Apr 01, 2010
Page 3 of 6
RJE0603JPE
Static Drain to Source On State Resistance
vs. Temperature
I
D
=
−25
A
−10
A
−5
A
Preliminary
Body-Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
1000
di / dt = 50 A /
μs
V
GS
= 0, Ta = 25°C
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
30
Pulse Test
25
20
−25
A
I
D
=
−5
A,
−10
A
V
GS
=
−10
V
5
-50 -25
0
25
50
75 100 125 150
100
15
−6
V
10
10
−0.1
−1
−10
−100
Case Temperature Tc (°C)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
−50
Switching Characteristics
100
Reverse Drain Current I
DR
(A)
Switching Time t (μs)
td(on)
tr
−40
−30
−20
−10
V
V
GS
= 0 V, 5 V
10
tf
td(off)
V
GS
=
−10
V, V
DD
=
−30
V
PW = 300
μs,
duty
≤
1 %
−5
V
−10
Pulse Test
0
−0.4
−0.8
−1.2
−1.6
−2.0
1
−1
−10
−100
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Source to Drain Voltage V
SD
(V)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
Gate to Source Voltage V
GS
(V)
−12
−10
−8
−6
−4
−2
0
0.001
10000
Capacitance C (pF)
V
DD
=
−16
V
1000
Coss
100
0
−10
−20
−30
−40
−50
−60
0.003
0.01
Drain to Source Voltage V
DS
(V)
Shutdown Time of Load-Short Test Pw (s)
REJ03G1907-0100 Rev.1.00
Apr 01, 2010
Page 4 of 6
RJE0603JPE
Shutdown Case Temperature vs.
Gate to Source Voltage
Shutdown Case Temperature Tc (°C)
200
Preliminary
180
160
140
120
100
0
−2
−4
−6
I
D
=
−5
A
−8
−10
Gate to Source Voltage V
GS
(V)
Normalized Transient Thermal Impedance
γ
s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.3
0.5
0.2
0.1
0.1
0.02
1
0.0
1
θ
ch- c(t) =
γ
s (t)
• θ
ch- c
θ
ch- c = 1.25°C/W, Tc = 25°C
P
DM
PW
T
D=
PW
T
0.03
e
uls
tp
o
sh
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
V
DD
= –30 V
Vout
td(on)
Vout
Monitor
Vin
10%
90%
90%
90%
Waveform
Vin
–10 V
50
Ω
10%
tr
td(off)
10%
tf
REJ03G1907-0100 Rev.1.00
Apr 01, 2010
Page 5 of 6
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