UNISONIC TECHNOLOGIES CO., LTD
10N60-TC
10A, 600V N-CHANNEL
POWER MOSFET
1
1
TO-220
TO-220F
Power MOSFET
DESCRIPTION
The
UTC 10N60-TC
is a high voltage and high current
power MOSFET, designed to have better characteristics, such
as fast switching time, low gate charge, low on-state
resistance and a high rugged avalanche characteristics. This
power MOSFET is usually used at high speed switching
applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
1
TO-220F1
1
TO-220F2
FEATURES
1
TO-220F3
1
TO-263
* R
DS(ON)
≤ 0.8 Ω @ V
GS
=10V, I
D
=5.0A
* Fast switching
* Improved dv/dt capability
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-220F3
TO-263
TO-263
Pin Assignment
1
2
3
A
K
A
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Ordering Number
Lead Free
Halogen-Free
10N60L-TA3-T
10N60G-TA3-T
10N60L-TF1-T
10N60G-TF1-T
10N60L-TF2-T
10N60G-TF2-T
10N60L-TF3-T
10N60G-TF3-T
10N60L-TF3T-T
10N60G-TF3T-T
10N60L-TQ2-T
10N60G-TQ2-T
10N60L-TQ2-R
10N60G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
10N60G-TA3-T
(1)Packing Type
(2)Package Type
(3)Green Package
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF1: TO-220F1, TF2: TO-220F2
(2) TF3: TO-220F, TF3T: TO-220F3, TQ2: TO-263
(3) G: Halogen Free and Lead Free, L: Lead Free
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Copyright © 2019 Unisonic Technologies Co., Ltd
1 of 6
QW-R205-432.B
10N60-TC
MARKING
UTC
10N60
Lot Code
1
L: Lead Free
G: Halogen Free
Date Code
Power MOSFET
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QW-R205-432.B
10N60-TC
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
± 30
V
Continuous
I
D
10
A
Drain Current
Pulsed (Note 2)
I
DM
20
A
Avalanche Energy
Single Pulsed (Note 3)
E
AS
799
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
2.42
V/ns
TO-220/TO-263
150
W
Power Dissipation
P
D
TO-220F/TO-220F1/
50
W
TO-220F2/TO-220F3
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 30mH, I
AS
= 7.3A, V
DD
= 50V, R
G
= 25 Ω Starting T
J
= 25°C
4. I
SD
≤ 10A, di/dt ≤200A/μs, V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATING
62.5
0.83
3.57
UNIT
°C/W
°C/W
°C/W
PARAMETER
Junction to Ambient
TO-220/TO-263
Junction to Case
TO-220F/TO-220F1/
TO-220F2/TO-220F3
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QW-R205-432.B
10N60-TC
ELECTRICAL CHARACTERISTICS
(T
J
= 25°С, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
Forward
Reverse
I
GSS
TEST CONDITIONS
V
GS
=0V, I
D
= 250μA
V
DS
=600V, V
GS
=0V
V
GS
=30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
600
10
100
-100
2.0
4.0
0.8
1288
135
6
26
7.5
4
16
18
68
34
10
40
1.4
400
4.2
V
µA
nA
nA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=5.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
GS
=0V, V
DS
=25V, f=1.0 MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)
Q
G
V
DS
=480V, V
GS
=10V, I
D
=10A
Gateource Charge
Q
GS
I
G
=1mA (Note 1, 2)
Gate-Drain Charge
Q
GD
SWITCHING CHARACTERISTICS
Turn-on Delay Time (Note 1)
t
D(ON)
Rise Time
t
R
V
DS
=100V, V
GS
=10V, I
D
=10A,
R
G
=25Ω (Note 1, 2)
Turn-off Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage (Note 1)
V
SD
V
GS
=0V, I
S
=10A
Reverse Recovery Time (Note 1)
t
rr
V
GS
=0V, I
S
=10A,
dI
F
/dt=100A/µs (Note1)
Reverse Recovery Charge
Q
rr
Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
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QW-R205-432.B
10N60-TC
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
I
SD
-
L
Power MOSFET
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R205-432.B
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