CT2N7002E-R3
N-Channel Enhancement MOSFET
Features
•
Drain-Source Breakdown Voltage V
DSS
60 V
•
Drain-Source On-Resistance
R
DS(ON)
4.15
Ω
, at V
GS
= 10V, I
DS
= 500mA
R
DS(ON)
4.7
Ω
, at V
GS
= 5.0V, I
DS
= 500mA
•
Advanced high cell density Trench Technology
•
RoHS Compliance & Halogen Free
•
ESD protection
Description
The CT2N7002E-R3 is the N-Channel logic
enhancement mode power field effect transistors are
produced using high cell density, DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance.
Applications
•
Cellular phone
•
Notebook
•
Power management
Package Outline
Drain
Gate
Source
CT Micro
Proprietary & Confidential
℃
•
Continuous Drain Current at T
A
=25
,I
D
= 500mA
Schematic
Drain
Gate
Source
Page 1
Rev 3
Jun, 2015
CT2N7002E-R3
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25
o
C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
STG
T
J
Parameters
Drain-Source Voltage
Gate-Source Voltage
Ratings
60
±20
500
1200
0.35
-55 to 150
-55 to 150
Units
V
V
mA
mA
W
o
C
o
C
Notes
Pulsed Drain Current
Total Power Dissipation @T
A
=25
Storage Temperature Range
Operating Junction Temperature Range
Thermal Characteristics
Symbol
R
JA
Parameters
Thermal Resistance
Test Conditions
Junction-Ambient (t=10s)
CT Micro
Proprietary & Confidential
℃
Min
-
Page 2
Continuous Drain Current @T
A
=25
1
1
2
℃
Typ
360
Max
-
Units
o
C
Notes
1,4
/W
Rev 3
Jun, 2015
CT2N7002E-R3
N-Channel Enhancement MOSFET
Electrical Characteristics
T
A
= 25°C (unless otherwise specified)
Static Characteristics
Symbol
B
VDSS
I
DSS
I
GSS
Parameters
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Test Conditions
V
GS
=0V, I
D
= 250µA
V
DS
= 60V, V
GS
= 0V
V
GS
=
±16V,
V
DS
= 0V
Min
60
-
-
Typ
-
-
-
Max
-
1
10
Units
V
µA
A
Notes
On Characteristics
Symbol
Parameters
Drain-Source On-Resistance
V
GS
= 5.0V, I
D
= 500mA
-
1.0
4.7
2.0
7.5
3.0
V
3
Gate-Source Threshold Voltage
V
GS
= V
DS
, I
D
=250µA
Test Conditions
V
GS
= 10V, I
D
= 500mA
Min
-
Typ
4.15
Max
7.5
3
Units
Notes
R
DS(ON)
V
GS(TH)
Dynamic Characteristics
Symbol
Parameters
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
DS
= 25V ,
V
GS
= 0V,
f=1MHz
Min
-
-
-
Typ
17
6
10
Max
-
-
-
pF
Units
Notes
C
ISS
C
OSS
C
RSS
Switching Characteristics
Symbol
Parameters
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
V
DS
= 15V , V
GS
= 5V,
Gate-Source Charge
I
D
= 500mA
Gate-Drain (Miller) Charge
-
0.12
-
V
DS
= 15V , V
GS
= 10V,
R
G
= 25 ,
I
D
=500mA
Test Conditions
Min
-
-
-
-
-
-
Typ
1.4
16.3
4.4
10
0.06
0.43
-
-
nC
Max
-
-
ns
-
Units
Notes
T
D(ON)
T
R
T
D(OFF)
T
F
Q
G
Q
GS
Q
GD
CT Micro
Proprietary & Confidential
Page 3
Rev 3
Jun, 2015
CT2N7002E-R3
N-Channel Enhancement MOSFET
Drain-Source Diode Characteristics
Symbol
Parameters
Body Diode Forward Voltage
Body Diode Continuous Current
Test Conditions
V
GS
= 0V, I
D
= 500mA
Min
Typ
0.96
Max
1.2
500
Units
V
mA
1
Notes
V
SD
I
SD
Note:
2. Device mounted on a glass-epoxy board
FR-4
25.4 × 25.4 mm .
2 Oz Copper
Actual Size
µ
3. The data tested by pulsed , pulse width
4. Thermal Resistance follow JESD51-3.
300 s , duty cycle
2%
CT Micro
Proprietary & Confidential
℃
1. The power dissipation is limited by 150
junction temperature.
Page 4
Rev 3
Jun, 2015
CT2N7002E-R3
N-Channel Enhancement MOSFET
Typical Characteristic Curves
CT Micro
Proprietary & Confidential
Page 5
Rev 3
Jun, 2015
stm32/stm8
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