2. Rating applies when for both diode legs when mounted on 130 mm
2
pad size.
3. Rating applies for both diode legs when mounted on 1 in pad size.
Symbol
R
qJC
R
qJA
R
qJA
Value
3
92
57
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage Drop (Note 4)
(i
F
= 3 A, T
J
= 25°C)
(i
F
= 3 A, T
J
= 125°C)
(i
F
= 5 A, T
J
= 25°C)
(i
F
= 5 A, T
J
= 125°C)
Maximum Instantaneous Reverse Current (Note 4)
(T
J
= 25°C, Rated dc Voltage)
(T
J
= 125°C, Rated dc Voltage)
Maximum Reverse Recovery Time
(I
F
= 1 Amp, di/dt = 50 A/ms, V
R
= 30 V, T
J
= 25°C)
Symbol
v
F
Value
0.95
0.80
1.05
0.90
5.0
150
50
Unit
Volts
i
R
mA
t
rr
ns
4. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
100
I
F
, FORARD CURRENT (A)
I
F
, FORARD CURRENT (A)
100
10
T
J
= 175°C
175°C
10
125°C
85°C
1
25°C
−40°C
125°C
1
−40°C
0.1
0
0.5
1.0
85°C
25°C
1.5
2.0
0.1
0
0.5
1.0
1.5
2.0
v
F,
INSTANTANEOUS VOLTAGE (V)
v
F,
INSTANTANEOUS VOLTAGE (V)
Figure 1. Maximum Forward Voltage
1000
I
R
, REVERSE CURRENT (mA)
100
10
1.0
0.1
0.01
25°C
175°C
125°C
85°C
I
R
, REVERSE CURRENT (mA)
1000
100
10
1.0
0.1
0.01
Figure 2. Typical Forward Voltage
175°C
125°C
85°C
25°C
−40°C
−40°C
0.001
0
0
50
100
150
200
v
R
, REVERSEE VOLTAGE (V)
250
300
0.001
0
0
50
100
150
200
250
v
R
, REVERSEE VOLTAGE (V)
300
Figure 3. Maximum Reverse Voltage
Figure 4. Typical Reverse Voltage
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2
MURD530T4G,
I
F
, AVERAGE FORWARD CURRENT (A)
Rated Voltage Applied
R
qJA
= 3°C/W
10
dc
SQUARE WAVE
5
I
F
, AVERAGE FORWARD CURRENT (A)
15
5
Rated Voltage Applied
R
qJA
= 57°C/W
dc
SQUARE WAVE
0
80
90
100 110 120 130 140 150 160 170 180
T
C
, CASE TEMPERATURE (°C)
0
80
90
100 110 120 130 140 150 160 170 18
T
A
, AMBIENT TEMPERATURE (°C)
Figure 5. Typical Current Derating, Case
P
FO
, AVERAGE POWER DISSIPATION (W)
8
7
C, CAPACITANCE (pF)
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
1
0
SQUARE WAVE
dc
1000
Figure 6. Typical Current Derating, Ambient
T
J
= 25°C
100
10
50
100
150
200
250
I
O
, AVERAGE FORWARD CURRENT (A)
V
R
, REVERSE VOLTAGE (V)
Figure 7. Forward Power Dissipation
Figure 8. Typical Capacitance
10
D = 0.5
R
(t)
, (°C/W)
1
0.2
0.1
0.05
0.1
0.01
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1
10
100
1000
Figure 9. R
(t)
on an Infinite Heatsink Power (J1) 0.800 W Power (J2) 0.800 W
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3
MURD530T4G,
100
10
R
(t)
, (°C/W)
1
0.1
0.01
0.001
0.000001
D = 0.5
0.2
0.1
0.05
0.01
Single Pulse
0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1
10
100
1000
Figure 10. PCB Cu Area 650
mm
2
PCB Cu thk 1 oz Power (J1) 0.800 W Power (J2) 0.800 W
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4
MURD530T4G,
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
E
b3
L3
1
4
A
B
A
C
c2
Z
D
2
3
DETAIL A
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−−
0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
L4
b2
e
TOP VIEW
NOTE 7
b
0.005 (0.13)
H
M
c
SIDE VIEW
C
Z
C
SEATING
PLANE
BOTTOM VIEW
Z
L2
GAUGE
PLANE
L
L1
DETAIL A
A1
BOTTOM VIEW
ALTERNATE
CONSTRUCTIONS
ROTATED 90 CW
5
SOLDERING FOOTPRINT*
6.20
0.244
3.00
0.118
2.58
0.102
5.80
0.228
1.60
0.063
6.17
0.243
SCALE 3:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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据外媒报道，萨里大学（University of Surrey）的研究人员开发出一种无需依赖GPS即可在人口密集的城市地区精确定位设备位置的人工智能系统。该系统可将定位误差从734米缩小到22米以内，这对于自动驾驶汽车和救援车辆等技术的发展意义重大。 图片来源： 萨里大学 在发表于《IEEE Robotics and Automation Letters》的论文中，研究人员介绍了PEn...[详细]
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