1N5221B - 1N5263B
0.5W Hermetically Sealed Glass Zener Diodes
Pb
RoHS
COMPLIANCE
DO-35
Features
Zener voltage range 2.4 to 56 volts
DO-35 package (JEDEC)
Through-hole device type mounting
Hemetically sealed glass
Compression bonded construction
All extermal surface are corrosion
resistant and leads are readily solderable
RoHS compliant
Solder hot dip Tin(Sn) lead finish
Cathode indicated by polarity band
Dimensions is inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
Cambient temperature unless otherwise specified.
Type Number
Power Dissipation
Forward Voltage
@ IF=200mA
Operating and Storage Temperature Range
Symbol
Pd
V
F
T
J
, T
STG
Value
500
1.1
-65 to + 200
Units
mW
V
O
C
Version: A07
RATINGS AND CHARACTERISTIC CURVES
(1N5221B THRU 1N5263B)
R
thJA
- Therm. Resist. Junction Ambient (K/W)
V
Ztn
- Relative Voltage Change
500
400
300
l
200
100
T
L
= constant
0
0
5
10
15
20
95 9611
1.3
V
Ztn
= V
Zt
/V
Z
(25 °C)
1.2
1.1
1.0
0.9
0.8
- 60
95 9599
TK
VZ
= 10 x 10
-4
/K
8 x 10
-4
/K
6 x 10
-4
/K
4 x 10
-4
/K
2 x 10
-4
/K
l
0
- 2 x 10
-4
/K
- 4 x 10
-4
/K
0
60
120
180
240
I - Lead Length (mm)
T
j
- Junction Temperature (°C)
Figure 1. Thermal Resistance vs. Lead Length
Figure 3. Typical Change of Working Voltage vs. Junction
Temperature
P
tot
- Total Power Dissipation (mW)
1000
V
Z
- Voltage Change (mV)
600
500
400
300
200
100
0
0
T
j
= 25 °C
100
I
Z
= 5 mA
10
1
0
95 9598
5
10
15
20
25
95 9602
40
80
120
160
200
V
Z
- Z-Voltage (V)
T
amb
- Ambient Temperature (°C)
Figure 2. Typical Change of Working Voltage under Operating
Conditions at T
amb
= 25 °C
Figure 4. Total Power Dissipation vs. Ambient Temperature
Version: A07
RATINGS AND CHARACTERISTIC CURVES
(1N5221B THRU 1N5263B)
TK
VZ
- Temperature Coefficient of
V
Z
(10
-4
/K)
15
100
80
P
tot
= 500 mW
T
amb
= 25 °C
10
I
Z
- Z-Current (mA)
60
40
20
0
5
I
Z
= 5 mA
0
-5
0
95 9600
10
20
40
30
V
Z
- Z-Voltage (V)
50
0
95 9604
4
6
8
12
20
V
Z
- Z-Voltage (V)
Figure 5. Temperature Coefficient of Vz vs. Z-Voltage
Figure 8. Z-Current vs. Z-Voltage
200
C
D
- Diode Capacitance (pF)
50
40
30
20
10
0
15
95 9607
150
V
R
= 2
V
T
j
= 25 °C
100
50
0
0
95 9601
I
Z
- Z-Current (mA)
P
tot
= 500 mW
T
amb
= 25 °C
5
10
15
20
25
20
25
30
35
V
Z
- Z-Voltage (V)
V
Z
- Z-Voltage (V)
Figure 6. Diode Capacitance vs. Z-Voltage
Figure 9. Z-Current vs. Z-Voltage
10
T
j
= 25 °C
r
Z
- Differiential Z-Resistance (Ω)
100
I
F
- Forward Current (mA)
1000
I
Z
= 1 mA
100
5 mA
1
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
10
10 mA
1
Tj = 25 °C
0
95 9606
5
10
15
20
25
95 9605
V
F
- Forward
Voltage
(V)
V
Z
- Z-Voltage (V)
Figure 7. Forward Current vs. Forward Voltage
Figure 10. Differential Z-Resistance vs. Z-Voltage
Version: A07
RATINGS AND CHARACTERISTIC CURVES
(1N5221B THRU 1N5263B)
Z
thp
–Thermal Resistance for Pulse Cond. (KW)
1000
t
p
/T = 0.5
100
t
p
/T = 0.2
Single Pulse
10
t
p
/T = 0.1
t
p
/T = 0.02
i
ZM
= (–V
Z
+(V
Z2
+4r
zj
x
T/Z
thp
)
1/2
)/(2r
zj
)
10
0
10
1
t
p
– Pulse Length (ms)
t
p
/T = 0.05
1
10
-1
t
p
/T = 0.01
R
thJA
= 300 K/W
T = T
jmax
–T
amb
10
2
95 9603
Figure 11. Thermal Response
Version: A07
ELECTRICAL CHARACTERISTICS
(Ratings at TA=25
o
C ambient temperature unless otherwise specified).
Device
V
z
@ I
zt
Voltage
Nominal
2.4
2.5
2.7
2.8
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
Current
I
ZT
(mA)
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9.0
8.5
7.8
7.4
7.0
6.6
6.2
5.6
5.2
5.0
4.6
4.5
4.2
3.8
3.4
3.2
3.0
2.7
2.5
2.2
Z
ZT
@ I
ZT
Ω
Max.
Z
ZK
@I
ZK
=0.25mA
Ω
Max.
I
R
@ V
R
uA
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
1N5256B
1N5257B
1N5258B
1N5259B
1N5260B
1N5261B
1N5262B
1N5263B
Notes:
30
30
30
30
29
28
24
23
22
19
17
11
7
7
5
6
8
8
10
17
22
30
13
15
16
17
19
21
23
25
29
33
35
41
44
49
58
70
80
93
105
125
150
1200
1250
1300
1400
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
900
1000
1100
1300
Max.
100
100
75
75
50.0
25.0
15.0
10.0
5.0
5.0
5.0
5.0
5.0
5.0
3.0
3.0
3.0
3.0
3.0
2.0
1.0
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
(Volts)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
8
8.4
9
10
10
11
12
13
14
14
15
17
18
19
21
21
23
25
27
30
33
36
39
43
1. The type numbers listed have zener voltage as whown and have a standard
tolerance on the nominal zener voltage of ±5%. Device of ±2% is indicated
by a "C" instead of a "B".
2. Nominal zener voltages between the voltages shown and tighter voltage, for
detalied information on price, availability and delivery.
3. The zener voltage(V
Z
) is tested under pulse condition. The measured V
Z
is
guaranteed to be within specification with device junction in thermal equilibrium.
4. Zener impedance is derived from the 60-cycle ac voltage, which results when an ac
current having an RMS value equal to 10% of the dc zener current (I
ZT
) is
superimposed to I
ZT
.
Version: A07
NXP MCU
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